KR930003610Y1 - Low pressure depositing apparatus in semiconductor device - Google Patents
Low pressure depositing apparatus in semiconductor device Download PDFInfo
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- KR930003610Y1 KR930003610Y1 KR2019900019706U KR900019706U KR930003610Y1 KR 930003610 Y1 KR930003610 Y1 KR 930003610Y1 KR 2019900019706 U KR2019900019706 U KR 2019900019706U KR 900019706 U KR900019706 U KR 900019706U KR 930003610 Y1 KR930003610 Y1 KR 930003610Y1
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- low pressure
- inner tube
- plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안의 장치의 일부를 단면으로 나타낸 정면도.1 is a front view showing a part of the device of the present invention in cross section.
제2도는 압력조정판의 평면도.2 is a plan view of the pressure adjusting plate.
제3도는 차단판의 평면도.3 is a plan view of a blocking plate.
제4도는 종래장치의 일부를 단면으로 나타낸 정면도.4 is a front view showing a part of the conventional apparatus in cross section.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
2 : 웨이퍼 4 : 가스노즐2: wafer 4: gas nozzle
5 : 인너튜브 9 : 보우트5: inner tube 9: bow
11 : 가스플레이트 11a : 통공11: gas plate 11a: through hole
12 : 차단판12: blocking plate
본 고안은 웨이퍼(Wafer)의 저압증착장치에 관한 것으로서, 특히 8″의 웨이퍼를 저압증착시킬때 주입가스를 튜브내에 균일하게 분포시킬 수 있도록 한것이다.The present invention relates to a low pressure deposition apparatus for wafers, and in particular, it is possible to uniformly distribute the injection gas in a tube when low pressure deposition of 8 ″ wafers.
일반적으로 저압증착장치는 밀폐된 튜브에 진공펌프로 계속 배기시키면서 일정량(30-300c/min)의 반응물질을 튜브내로 흘려주면서 튜브내에 저압을 유지시킨다.In general, the low pressure deposition apparatus maintains low pressure in the tube while flowing a certain amount (30-300 c / min) of reactant into the tube while continuously evacuating the sealed tube with a vacuum pump.
이때 웨이퍼는 히터에 의해 적당한 온도로 유지시켜 주면 반응물질의 화학반응에 의해 일정한 속도로 증착이 일어나게 된다.At this time, if the wafer is maintained at an appropriate temperature by the heater, deposition occurs at a constant rate by chemical reaction of the reactants.
저압증착장치의 특성은 증착될때 튜브의 압력(증착압력)이 200-500mTorr로 저압이라는 것과 단순한 열에너지에 의하여 반응이 진행되어 증착막이 균일도 및 스텝 커버레지(Step Coverage)가 좋으며, 양질의 증착막을 한꺼번에 많은 량의 웨이퍼(50-150)위에 증착시킬 수 있으므로 생산원가를 줄일 수 있게 된다.The characteristics of the low pressure evaporation device are that the pressure of the tube (deposition pressure) is 200-500 mTorr when it is deposited, and the reaction proceeds by simple heat energy, so that the deposited film has good uniformity and step coverage. It can be deposited on a large amount of wafer (50-150) to reduce the production cost.
종래의 저압증착장치는 제4도에 도시한 바와 같이 아우트튜브(21)의 외측에 히터(22)가 설치되어 있고 내부에는 인너튜브(23)가 설치되어 있다.In the conventional low pressure deposition apparatus, as shown in FIG. 4, the heater 22 is provided on the outside of the outer tube 21, and the inner tube 23 is provided inside.
또한 아우트튜브(21)의 하방 일측에 가스노즐(24)이 설치되어 가스를 인너튜브(23)내로 공급시킬 수 있도록 되어 있고 그 반대측에는 진공펌프(도시는 생략함)에 의해 튜브(21)(23)내의 압력을 저하시키기 위해 배기관(25)이 설치되어 있다.In addition, a gas nozzle 24 is installed at one side of the outer tube 21 to supply gas into the inner tube 23, and the tube 21 (not shown) is provided on the opposite side thereof by a vacuum pump (not shown). The exhaust pipe 25 is provided in order to reduce the pressure in 23).
그리고 하부에 설치된 뚜껑부근(26)에는 아우트튜브(21)와 유지하기 위해 오링(도시는 생략함)이 설치되어 있고 이 오링을 고온(600-800℃)으로 부터 보호하기 위해 냉각수(27)가 흐르도록 되어 있다.And the lower portion of the lid 26 is provided with an O-ring (not shown) to maintain the outer tube 21 and the cooling water 27 is provided to protect the O-ring from high temperature (600-800 ℃) It is supposed to flow.
따라서 보우트(28)에 웨이퍼(29)를 적재시키고 가스노즐(24)을 통해 가스를 인너튜브(23)에 공급함과 동시에 진공펌프에 의해 튜브(21)(23)내를 저압으로 유지하면 반응물질의 화학반응에 따라 일정한 속도로 웨이퍼(29)에 증착이 일어나게 된다.Therefore, when the wafer 29 is loaded on the boat 28 and the gas is supplied to the inner tube 23 through the gas nozzle 24, the inside of the tubes 21 and 23 is maintained at a low pressure by a vacuum pump. According to the chemical reaction of the deposition occurs on the wafer 29 at a constant rate.
그러나 이러한 종래의 장치에서 웨이퍼(29)를 8″로 할 경우에 튜브(21)(23)의 직경 또한 비례하여 커기지게되고, 이에따라 진공펌프의 배기로 인해 주입된 가스가 보우트(28)의 하부에서 상부까지 균일하게 분포되지 않는 결점이 있었다.However, in such a conventional apparatus, when the wafer 29 is 8 ″, the diameters of the tubes 21 and 23 also increase in proportion to each other, so that the gas injected due to the evacuation of the vacuum pump is lowered from the bottom of the boat 28. There was a defect not uniformly distributed from to top.
이와 같은 결점을 감안하여 가스의 주입시에 보우트(28)를 회전시켜 증착두께의 균일도를 극복하려고 했으나, 이또한 두 종류의 가스의 반응에서는 두 가스의 분포가 불균일하게 되어 반응비가 각각 달라지게 되므로 굴절률이 박막에서 일정하게 되지 않아 박막의 특성을 저하시키게 되는 결점이 있었고, 또한 오링을 냉각시키기 위해 냉각수가 뚜겅(26) 근처로 통과하기 때문에 뚜껑(26) 부분의 온도가 낮아져 가스 잔유물인 파우더등의 부산물이 생성되어 웨어퍼(29)를 오염시키게 되는 결점도 있었다.In view of these drawbacks, the injection of gas was attempted to overcome the uniformity of the deposition thickness by rotating the boat 28. However, in the reaction of the two gases, the distribution of the two gases becomes non-uniform, resulting in a different reaction ratio. There was a defect that the refractive index did not become constant in the thin film, which deteriorated the characteristics of the thin film. Also, since the cooling water passed near the lid 26 to cool the O-ring, the temperature of the lid 26 was lowered, such as powder, which is a gas residue. There was also a defect that the by-products of the contaminated the wafer 29.
본 고안은 종래의 이와 같은 결점을 감안하여 안출한 것으로서, 튜브내의 가스반응을 일정하게 유지하여 웨어퍼에 증착되는 박막의 두께 및 굴절률을 균일하게 할수 있도록 하는데 그 목적이 있다.The present invention has been made in view of the above drawbacks of the prior art, and its purpose is to maintain a constant gas reaction in the tube so that the thickness and refractive index of the thin film deposited on the wafer can be uniform.
상기한 목적을 달성하기 위해 본 고안은 인너튜브에 웨이퍼가 적재된 보우트를 내장하여 가스플레이트를 통해 일정하게 혼합된 가스를 주입함과 함께 진공펌프에 의해 저압을 유지하면서 웨이퍼에 박막을 증착시키도록 된것에 있어서, 가스노즐의 상방에 위치토록된 다수개의 통공을 가진 플레이트를 인너튜브안에 위치시킴과 함께 그 하방에는 차단판을 설치하여 잔여가스가 냉각수 부분으로 흐르는 것을 방지하여 뚜껑에 파우더등이 형성되는 것을 방지할 수 있도록 하여서된 웨이퍼의 저압증착장치가 제공된다.In order to achieve the above object, the present invention embeds a boat loaded with a wafer in an inner tube, injects a gas mixed uniformly through a gas plate, and deposits a thin film on the wafer while maintaining a low pressure by a vacuum pump. In this case, a plate having a plurality of through-holes located above the gas nozzle is positioned in the inner tube, and a blocking plate is installed below the block to prevent residual gas from flowing to the cooling water portion, thereby forming powder or the like on the lid. A low pressure deposition apparatus for a wafer is provided which can be prevented from being made.
이하, 본 고안을 일실시예로 도시한 첨부된 도면 제1도 내지 제3도를 참고로 하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to FIGS. 1 to 3 of the accompanying drawings showing an embodiment as follows.
첨부도면 제1도는 본 고안 장치의 일부를 단면으로 나타낸 정면도이고, 제2도는 가스플레이트의 평면도이며, 제3도는 차단판의 평면도로서, 아우트튜브(1)의 외측에 웨이퍼(2)를 적당한 온도로 유지시키기 위한 히터(3)가 설치되어 있고 내부에는 가스노즐(4)을 통해 유입되는 가스에 의해 웨이퍼(2)를 증착시키기 위한 인너튜브(5)가 설치되어 있다.FIG. 1 is a front view showing a part of the device of the present invention in cross section, FIG. 2 is a plan view of a gas plate, and FIG. 3 is a plan view of a blocking plate, and the wafer 2 is placed on the outside of the outer tube 1 at an appropriate temperature. A heater 3 for maintaining the furnace is provided, and an inner tube 5 for depositing the wafer 2 by the gas flowing through the gas nozzle 4 is installed therein.
그리고 가스노즐(4)의 반대측 아우트튜브(1)에 진공펌프(도시는 생략함)에 의해 튜브(1)(5)내를 저압으로 유지하기 위한 배기관(6)이 설치되어 있고 하방의 뚜껑(7)과 아우트튜브(1) 사이에는 오링(도시는 생략함)이 설치되어 있으며, 오링을 고온으로 부터 보호하기 위해 뚜껑(7)의 내부에 냉각수(8)가 흐르도록 되어 있다.In addition, an exhaust pipe 6 for maintaining the inside of the tubes 1 and 5 at a low pressure is provided on the outer tube 1 opposite the gas nozzle 4 by a vacuum pump (not shown). An o-ring (not shown) is provided between the 7 and the outer tube 1, and the cooling water 8 flows inside the lid 7 to protect the o-ring from high temperature.
그리고 인너튜브(5)에 웨이퍼(2)가 삽입된 보우트(9)가 얹혀지는 보우트홀더(10)가 설치되어 있고 보우트홀더(10) 하방으로는 다수개의 통공(11a)을 가진 가스플레이트(11)가 설치되어 있으며, 그 하방에는 가스플레이트(11)와 일정간격을 유지하면서 인너튜브(5)의 하방을 폐쇄시키기 위한 차단판(12)이 설치되어 있다.In addition, a boat holder 10 on which the boat 9 into which the wafer 2 is inserted is placed is installed on the inner tube 5, and a gas plate 11 having a plurality of through holes 11a below the boat holder 10. ), And a blocking plate 12 for closing the lower portion of the inner tube 5 while maintaining a constant distance from the gas plate 11 is provided below.
이와 같이 구성된 본 고안의 작용효과를 설명하면 다음과 같다.Referring to the effect of the present invention configured as described above are as follows.
먼저 보우트(9)에 웨이퍼(2)를 적재시켜 인너튜브(5)에 내장시키고 진공펌프를 작동시키면 튜브(1)(5)내에 저압이 유지된다.First, when the wafer 2 is loaded on the boat 9 and embedded in the inner tube 5 and the vacuum pump is operated, the low pressure is maintained in the tubes 1 and 5.
그후 가스노즐(4)을 통해 가스(반응물질)를 주입시키면 히터(3)에 의해 적당한 온도를 유지하고 있던 웨이퍼(2)에 증착이 일어나게 되는데, 이때 주입된 가스는 가스플레이트(11)와 차단판(12) 사이에서 일정하게 혼합을 유지한채 통공(11a)을 통해 인너튜브(5)로 공급되어지므로 가스반응비가 인너튜브(5)내에 균일하게 분포 되어진다.Thereafter, when gas (reactant) is injected through the gas nozzle 4, deposition occurs on the wafer 2 maintained at an appropriate temperature by the heater 3, at which time the injected gas is blocked from the gas plate 11. The gas reaction ratio is uniformly distributed in the inner tube 5 because it is supplied to the inner tube 5 through the through hole 11a while maintaining a constant mixing between the plates 12.
또한 웨이퍼(2)에 증착을 함에 따라 아우트튜브(1)와 두껑(7)의 기밀을 유지하기 위한 오링이 고온으로 부터 손상되어 가스가 외부로 누설되는 것을 방지하기 위해 냉각수(8)가 뚜껑(7)의 근처로 통과하면서 오링을 보호하게 되는데, 이때에는 온도차에 의해 뚜껑(7)의 내부에 6NH4CI과 같은 부산물이 형성되지만 주입가스가 뚜껑(7)과 접촉하는 것을 차단판(12)이 차단시켜 부산물이 생성되는 것을 차단하여 웨이퍼(2)를 부산물로 부터 보호하게 되는 것이다.In addition, as the deposition on the wafer 2, the O-ring for maintaining the airtightness of the outer tube 1 and the lid 7 is damaged from high temperature, and the cooling water 8 is closed to prevent the gas from leaking to the outside. The O-ring is protected while passing near the 7). In this case, by-products such as 6NH 4 CI are formed in the lid 7 due to the temperature difference, but the injection gas does not come into contact with the lid 7. This blockage prevents the generation of by-products, thereby protecting the wafer 2 from the by-products.
이상에서와 같이 본 고안 장치는 인너튜브(5)에 통공(11a)을 가진 플레이트와 차단판(12)을 설치하는 구조에 의해 반응물질의 분포상태를 항상 균일하게 유지시킬 수 있게되어 8″의 웨이퍼(2)를 균일한 두께로 증착시킬수 있으며, 공정웨이퍼 수량을 증가시키며 굴절율을 일정하게 함은 물론 냉각수(8)로 인해 뚜껑(7)에 생성되는 부산물을 억제시킴과 동시에 부산물이 인너튜브(5)에 유입되는 것을 미연에 방지할 수 있게 되므로 양질의 웨이퍼를 생산할 수 있게 되는 효과가 있다.As described above, the device of the present invention has a structure in which the plate having the through hole 11a and the blocking plate 12 are installed in the inner tube 5 so that the distribution state of the reactants can be kept uniform at all times. It is possible to deposit the wafer 2 to a uniform thickness, increase the number of process wafers, make the refractive index constant, and suppress the by-products generated in the lid 7 due to the cooling water 8 and at the same time, the by-products are formed in the inner tube ( 5) Since it is possible to prevent the inflow in advance, there is an effect that can produce a good wafer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900019706U KR930003610Y1 (en) | 1990-12-13 | 1990-12-13 | Low pressure depositing apparatus in semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900019706U KR930003610Y1 (en) | 1990-12-13 | 1990-12-13 | Low pressure depositing apparatus in semiconductor device |
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| Publication Number | Publication Date |
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| KR920013690U KR920013690U (en) | 1992-07-27 |
| KR930003610Y1 true KR930003610Y1 (en) | 1993-06-19 |
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| KR2019900019706U KR930003610Y1 (en) | 1990-12-13 | 1990-12-13 | Low pressure depositing apparatus in semiconductor device |
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| KR (1) | KR930003610Y1 (en) |
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- 1990-12-13 KR KR2019900019706U patent/KR930003610Y1/en not_active IP Right Cessation
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| KR920013690U (en) | 1992-07-27 |
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