KR930000884B1 - Photo diode - Google Patents

Photo diode Download PDF

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Publication number
KR930000884B1
KR930000884B1 KR1019900003070A KR900003070A KR930000884B1 KR 930000884 B1 KR930000884 B1 KR 930000884B1 KR 1019900003070 A KR1019900003070 A KR 1019900003070A KR 900003070 A KR900003070 A KR 900003070A KR 930000884 B1 KR930000884 B1 KR 930000884B1
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type
region
photodiode
type well
ions
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KR1019900003070A
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Korean (ko)
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KR910017650A (en
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정원영
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금성일렉트론 주식회사
문정환
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Priority to KR1019900003070A priority Critical patent/KR930000884B1/en
Priority to JP3031453A priority patent/JP2701180B2/en
Priority to GB9102177A priority patent/GB2241826A/en
Priority to DE4107523A priority patent/DE4107523A1/en
Publication of KR910017650A publication Critical patent/KR910017650A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A photodiode suitable for CCD image sensor consists of: P-type well (1) formed on polysilicon substrate; N+ region (2) formed by implanting N+ ions in the above P-type well (1); and source/drain region (3a,3b), which is P+ region, formed by implanting P+ ions between P-type well (1) and N+ region (2) using photoresist. The process for manufacturing the above photodiode can cut down the processing time by reducing the masking stage to enhance the productivity.

Description

포토다이오드Photodiode

제1도는 종래의 n형/P형 접합구조의 포토다이오드에 대한 평면도 및 단면도.1 is a plan view and a cross-sectional view of a photodiode of a conventional n-type / P-type junction structure.

제2도는 종래의 P형/n형/P형 접합구조의 포토다이오드에 대한 평면도 및 단면도.2 is a plan view and a cross-sectional view of a photodiode of a conventional P-type / n-type / P-type junction structure.

제3도는 종래의 트리플 폴리실리콘 구조의 포토다이오드에 대한 평면도 및 단면도3 is a plan view and a cross-sectional view of a conventional photodiode of triple polysilicon structure

제4도는 제3도에 도시된 포토다이오드의 청색광 식별 왜곡 파형도.4 is a blue light identification distortion waveform diagram of the photodiode shown in FIG.

제5도는 본 발명에 따른 포토다이오드의 제조 공정도.5 is a manufacturing process diagram of the photodiode according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : P형-웰 2 : N+영역1: P-well 2: N + region

3a,3b : P+형 소오스/드레인 영역3a, 3b: P + type source / drain region

본 발명은 CCD등의 영상센서에 적당하도록 한 포토다이오드에 관한 것이다.The present invention relates to a photodiode adapted to be suitable for an image sensor such as a CCD.

일반적으로 CCD에서 사용되는 일반적인 포토다이오드의 종류로는 n형/P형 구조, P+형/n형/P형 구조, 트리플 폴리실리콘 구조로 나눌 수 있다.In general, the photodiode used in the CCD may be classified into an n-type / P-type structure, a P + type / n-type / P-type structure, and a triple polysilicon structure.

n형/P형 구조는 제1도와 같이 일반적인 포토다이오드의 구조로서 P형-웰(1)에 인이온을 주입하여 n+영역(2)을 형성한 후에, 이 영역(2)에 전하가 축적되도록 한 것이다.The n-type / P-type structure is a structure of a general photodiode as shown in FIG. 1, after which phosphorus ions are implanted into the P-well 1 to form the n + region 2, and thereafter, charges are accumulated in the region 2 It was made possible.

P+형/n형/P형 구조는 제2도와 같이 상기 n형/P형의 일반적인 구조에, 얇은 P+영역(4)을 형성하여 전기적 특성을 얻을 수 있게 하였다.The P + type / n type / P type structure, as shown in FIG. 2, forms a thin P + region 4 in the general structure of the n type / P type to obtain electrical characteristics.

또한, 트리플 폴리실리콘 구조는 제3도와 같이 P+형/n형/P형 구조에서 P+이온주입 대신에 절연층(6)을 형성하고, 그 위에 폴리실리콘 박막(5)을 설치하여, 이 박막( 5)이 P+영역의 역할을 대신하도록 한 것이다.In addition, in the triple polysilicon structure, the insulating layer 6 is formed instead of the P + ion implantation in the P + type / n type / P type structure as shown in FIG. 3, and the polysilicon thin film 5 is provided thereon. The thin film 5 replaces the role of the P + region.

먼저 제1도의 동작을 보면 빛이 수광부에 입사하여 n영역(2)에서 전자들이 축적되도록 하였으며, 제2도의 경우 표면상태로 인해서 생기는 노이즈를 극소화시키고, 낮은 전압에서도 완전히 공핍시킬 수 있도록 하였다.First, as shown in FIG. 1, light is incident on the light receiving unit, and electrons are accumulated in the n region 2. In FIG.

그리고 제3도의 포토다이오드의 경우 P+형 영역 형성시 얇은 접합 형성의 어려움을 해결하기 위해 박막 폴리실리콘(5)에 바이어스를 인가하므로써 전력에 의해 P형 반전층을 형성시킬 수 있게 하였다.In the case of the photodiode of FIG. 3, in order to solve the difficulty of forming a thin junction when forming a P + type region, a bias is applied to the thin film polysilicon 5 to form a P type inversion layer by electric power.

제3도 구조에서는 트리플 폴리실리콘 영역밑에 P+형 이온층이 형성되어 P+형 반전층이 생겨 노이즈가 발생하지 않을 뿐 아니라 낮은 전압에서 완전히 공핍시킬 수 있다.In the structure of FIG. 3, the P + type ion layer is formed under the triple polysilicon region to form a P + type inversion layer, so that noise is not generated and it can be completely depleted at low voltage.

그러나 제1도의 n형/P형 구조에 있어서는 심한 노이즈로 인해 사용하기가 어렵고, 제2도의 P+형/n형/P형 구조의 경우 노이즈 방지 및 공핍 전압을 얻기 위한 P+형 영역(4)을 제조하기가 어려우며, 제3도의 트리플 폴로실리콘 구조의 경우에는 폴리실리콘에 의해 파장이 짧은 청색파장이 흡수되어 청색파장 영역이 명확하게 구분하지 못하는 결점이 있었다(제4도“A”참조).However, in the n-type / P-type structure of FIG. 1, it is difficult to use due to severe noise, and in the P + -type / n-type / P-type structure of FIG. 2, the P + type region for noise prevention and depletion voltage (4 In the case of the triple polysilicon structure of FIG. 3, a short wavelength of blue wavelength is absorbed by polysilicon, and thus the blue wavelength region cannot be clearly distinguished (see FIG. 4, “A”). .

본 발명의 목적은 상기한 바와 같은 종래의 포토다이오드의 결점을 극복한 신규의 포토다이오드를 제공하는데 있다.It is an object of the present invention to provide a novel photodiode which overcomes the drawbacks of conventional photodiodes as described above.

제5도는 본 발명에 따른 포토다이오드의 제조 공정을 도시하고 있다. 그 공정에 관해 설명한다.5 shows a manufacturing process of a photodiode according to the present invention. The process is demonstrated.

제5도(a)는 폴리실리콘 웨이퍼 상에 P형 웰(1)이 형성된 것을 도시하고 있다. 그후 이온 주입기를 사용하여 웰(1)의 소정 부분에 n+영역(2)을 만든다(b). 그 다음에 (c)도에 도시한 바와 같이 포토레지스트막을 사용하여 P+형 웰(1)과 n+영역(2) 사이에 P+형 이온을 주입시킨 후 열처리하여 확산시킴으로서 P+형 영역을 만든다. 이 영역은 소오스/드레인 영역(3a,3b) 부분이 된다. 제5도(d)는 상기 공정들을 완료했을때의 평면도이다. 도시된 구조를 알 수 있는 바와 같이, P+형 소오스/드레인 영역(3a,3b)의 공핍영역들은 (e)도에서 해칭선으로 표시하였듯이 오버랩(overlap)되어 P+형/n형/P형 구조의 포토다이오드와 동일한 구조로 된다.FIG. 5 (a) shows that a P well 1 is formed on a polysilicon wafer. Then use an ion implanter to n to the desired portion of the well 1+Create area 2 (b). Then, as shown in (c), P is used for the photoresist film.+Type well (1) and n+P between zones (2)+brother P implant by implanting ions and then heat treatment+Create a mold area. This region becomes a portion of the source / drain regions 3a and 3b. 5 (d) is a plan view when the above processes are completed. As can be seen the structure shown, P+Depletion regions of the type source / drain regions 3a and 3b are overlapped as indicated by hatched lines in (e).+It has the same structure as the photodiode of the type / n type / P type structure.

그리고 표면이 완전히 공핍되었기 때문에 표면 상태와 관련된 암전류(dark current) 노이즈가 감소되고, 공핍전압이 낮아지게 된다.And since the surface is completely depleted, dark current noise associated with the surface state is reduced and the depletion voltage is lowered.

결론적으로, 본 발명에 의하면 종래와 같이 공정상 별도의 얇은 P+형 영역을 형성시키거나 트리플 폴리실리콘 공정을 사용하지 않아도 이와 동일한 효과를 얻을 수 있음과 아울러 종래의 P형 소오스/드레인(3a,3b) 공정에서 공핍 영역이 형성되게 하므로써 공장시의 마스크 단계를 감소시켜 이에 따라 공정시간의 단축과, 생산성을 향상시킬 수 있는 장점이 있다.In conclusion, according to the present invention, the same effect can be obtained without forming a separate thin P + type region in the process or using a triple polysilicon process as in the related art, and the conventional P type source / drain (3a, 3b) The depletion region is formed in the process, thereby reducing the mask stage at the factory, thereby reducing the process time and improving productivity.

Claims (1)

폴리실리콘 기판상에 형성된 P형 웰(1)과, 상기 P형 웰(1)내에 n+이온을 주입하여 형성한 n+영역(2)과, 상기 P+형 웰(1)과 n+형 영역(2) 사이에 포토레지스트막을 사용하여 P+형 이온을 주입시켜 형성된 소오스/드레인 영역(3a,3b)을 포함한 것을 특징으로 하는 포토다이오드.P type well 1 formed on the polysilicon substrate, n + region 2 formed by implanting n + ions into the P type well 1, and the P + type well 1 and n + type A photodiode comprising source / drain regions (3a, 3b) formed by implanting P + type ions between regions (2) using a photoresist film.
KR1019900003070A 1990-03-08 1990-03-08 Photo diode KR930000884B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900003070A KR930000884B1 (en) 1990-03-08 1990-03-08 Photo diode
JP3031453A JP2701180B2 (en) 1990-03-08 1991-02-01 Photodiode
GB9102177A GB2241826A (en) 1990-03-08 1991-02-01 Photo diode
DE4107523A DE4107523A1 (en) 1990-03-08 1991-03-08 PHOTODIOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003070A KR930000884B1 (en) 1990-03-08 1990-03-08 Photo diode

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KR910017650A KR910017650A (en) 1991-11-05
KR930000884B1 true KR930000884B1 (en) 1993-02-08

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DE (1) DE4107523A1 (en)
GB (1) GB2241826A (en)

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KR20030090867A (en) * 2002-05-22 2003-12-01 동부전자 주식회사 Cmos image sensor

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Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
WO1989006052A1 (en) * 1987-12-14 1989-06-29 Santa Barbara Research Center Reticulated junction photodiode having enhanced responsivity to short wavelength radiation

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JP2701180B2 (en) 1998-01-21
GB2241826A (en) 1991-09-11
KR910017650A (en) 1991-11-05
GB9102177D0 (en) 1991-03-20
JPH04217365A (en) 1992-08-07
DE4107523A1 (en) 1991-09-12

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