JPS6018957A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS6018957A JPS6018957A JP58126653A JP12665383A JPS6018957A JP S6018957 A JPS6018957 A JP S6018957A JP 58126653 A JP58126653 A JP 58126653A JP 12665383 A JP12665383 A JP 12665383A JP S6018957 A JPS6018957 A JP S6018957A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffusion layer
- solid
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
Description
【発明の詳細な説明】
（１）発明の利用分野
本発明は、受光素子と、受光素子が形成される同一半導
体基板上に形成された受光素子からの出力を読み出しす
る回路とからなる固体撮像素子特に、フォトダイオード
からなる受光素子とＭＯ３型トランジスタからなるスイ
ッチ素子と、ＭＯ８型トランジスタで構成された走査回
路からなるＭＯＳ型固体撮像素子に関するものである。Detailed Description of the Invention (1) Field of Application of the Invention The present invention relates to a solid-state imaging device comprising a light receiving element and a circuit for reading output from the light receiving element formed on the same semiconductor substrate on which the light receiving element is formed. In particular, the present invention relates to a MOS solid-state image pickup device, which includes a light-receiving element made of a photodiode, a switching element made of an MO3 type transistor, and a scanning circuit made of an MO8 type transistor.
（２）従来技術
第１図に従来のＭＯＳ型固体撮像素子の画素部の断面図
を示す。以下説明の都合上、電子が担体となるＮチャン
ネルトランジスタを用いた固体撮像素子について記すが
、正孔を担体とした固体撮像素子についても同様である
。第１図において・１はＰ型シリコン基板、２はＮ型拡
散層であり、１と２で形成されるダイオードが受光素子
となり、また、２はトランジスタ乙のソースとなってい
る。(2) Prior Art FIG. 1 shows a cross-sectional view of a pixel portion of a conventional MOS type solid-state image sensor. For convenience of explanation, a solid-state imaging device using an N-channel transistor using electrons as carriers will be described below, but the same applies to a solid-state imaging device using holes as carriers. In FIG. 1, 1 is a P-type silicon substrate, 2 is an N-type diffusion layer, a diode formed by 1 and 2 becomes a light receiving element, and 2 is a source of transistor B.
４はドレインとなるＮ型拡散層であり、５はゲート電極
である。６は絶縁膜である。4 is an N-type diffusion layer that becomes a drain, and 5 is a gate electrode. 6 is an insulating film.
第２図には等何回路を示す。７は前述したダイオードで
ある。Figure 2 shows an equal circuit. 7 is the diode mentioned above.
動作を簡単に説明すると、光６が入射すると７で光電子
を発生する。この光電子は７の接合容量に蓄えられる。Briefly explaining the operation, when light 6 is incident, photoelectrons are generated at step 7. This photoelectron is stored in the junction capacitor 7.
蓄えられた光電子は走査回路により選択された６のスイ
ッチ素子により信号線に導かれる。The stored photoelectrons are guided to the signal line by six switch elements selected by the scanning circuit.
この様な従来のＭＯ８型撮像素子においては次のような
問題点があった。Such a conventional MO8 type image sensor has the following problems.
フォトダイオードとなる２のＮ型拡散層は・短波長側の
感度を落さないために、深さは１μｍ程度とある程度深
くしなければならない。通常の製造工程においては、ド
レインとなるＮ型拡散層４も２と同時に形成するため、
拡散層の横方内拡がりが大きくなり、微細化が困難とな
る。また、ゲート−ドレイン間容量等の寄生容量が大き
くなり、Ｓ ／ Ｎ比が悪くなる速度が遅くなる等の問
題点である。The N-type diffusion layer 2, which becomes the photodiode, must have a certain depth of about 1 μm in order not to reduce the sensitivity on the short wavelength side. In the normal manufacturing process, the N-type diffusion layer 4 which becomes the drain is also formed at the same time as 2.
The lateral inward expansion of the diffusion layer becomes large, making it difficult to miniaturize. Another problem is that parasitic capacitance such as gate-drain capacitance increases, and the rate at which the S/N ratio deteriorates becomes slower.
（３）本発明の目的
本発明は、受光部のＮ型拡散層の深さを部分的に深くす
ることにより前述した問題点を解決したＭＯ８型固体撮
像素子を提案するものである〇以下、図面に基づいて詳
細に説明する。(3) Purpose of the present invention The present invention proposes an MO8 type solid-state image sensor that solves the above-mentioned problems by partially increasing the depth of the N-type diffusion layer in the light receiving section. This will be explained in detail based on the drawings.
（４）本発明の実施例
第６図は本発明の実施例である。１１は本発明の主旨に
より設けたＮ型拡散層であり、受光ダイオードとなる拡
散層９は深く（５１μｍ）なっておりトランジスタを構
成する部分の拡散層１ｏ及び４のドレインは浅く（０３
〜０５μ？７Ｉ）なっている。このような構成にするこ
と罠より、受光部では短波長感度を落さず、しかも、ト
ランジスタ部の横方向拡散が小さく微細化に適した撮像
素子となる。(4) Embodiment of the present invention FIG. 6 shows an embodiment of the present invention. Reference numeral 11 denotes an N-type diffusion layer provided in accordance with the gist of the present invention, the diffusion layer 9 serving as a light receiving diode is deep (51 μm), and the drains of the diffusion layers 1o and 4 forming the transistor are shallow (03
~05μ? 7I) It has become. By adopting such a configuration, the short wavelength sensitivity of the light receiving section is not degraded, and the lateral diffusion of the transistor section is small, resulting in an image sensor suitable for miniaturization.
次に製造方法について本発明に関係する工程のみ、第４
図に基づいて説明する。Next, regarding the manufacturing method, only the steps related to the present invention will be explained.
This will be explained based on the diagram.
（α）公知の方法にて６の絶縁膜、５のゲート電極を形
成する。(α) An insulating film 6 and a gate electrode 5 are formed by a known method.
（ｂ）受光ダイオードが形成される領域の一部分にのみ
、Ｎ型不純物である例えばリンを、例えばイオン注入法
により、１の表面に導入する。(b) An N-type impurity, such as phosphorus, is introduced into the surface of the substrate 1 by, for example, ion implantation only in a portion of the region where the light-receiving diode is to be formed.
（１）その後熱拡散により深いＮ型拡散層９を形成し、
次に浅い拡散層を形成するため、例えばリンを、１の表
面に導入する。(1) After that, a deep N-type diffusion layer 9 is formed by thermal diffusion,
Next, phosphorus, for example, is introduced into the surface of 1 to form a shallow diffusion layer.
（ｄ）次に熱拡散を行ない浅い拡散層４を形成し、本発
明の主旨の拡散層１１を形成する。(d) Next, thermal diffusion is performed to form a shallow diffusion layer 4, thereby forming a diffusion layer 11 which is the gist of the present invention.
以上のようにして本発明の実施例を得る。以上の説明に
おいては、２回の熱拡散により浅い拡散層と深い拡散層
を形成したが、深い拡散層用として拡散定数の大きいリ
ンを用い、浅い拡散層用として拡散定数の小さいヒ素を
用いて１回の熱拡散により形成してもよい〇
以上説明してきたように、受光部の拡散層の深さを部分
的に深くすることにより、微細化に適し、しかも短波長
感度を向上させた撮像素子を形成することができる。An example of the present invention is obtained as described above. In the above explanation, a shallow diffusion layer and a deep diffusion layer were formed by thermal diffusion twice, but phosphorus with a large diffusion constant was used for the deep diffusion layer, and arsenic with a small diffusion constant was used for the shallow diffusion layer. It may be formed by one-time thermal diffusion. As explained above, by partially deepening the depth of the diffusion layer in the light receiving section, imaging is possible that is suitable for miniaturization and has improved short wavelength sensitivity. elements can be formed.
第１図は従来のＭＯＩＳ型固体撮像素子の画素部の断面
図、第２図は等価回路、第３図は本発明の実施例の断面
図、第４図←）〜（ｄ）は本発明の実施例の製造方法で
ある０
１・・・Ｐ型シリコン基板
２．４・・・Ｎ型拡散層
３・・・ＭＯＳ型トランジスタ
５・・・ゲート電極 ６・・・絶縁膜
７・・°７オトダイオード ８・・・入射光９・・・深
いＮ型拡散層
１０・・・浅いＮ型拡散層
１１・・・受光部分 １２・・・レジスト以 上
第３図Fig. 1 is a cross-sectional view of a pixel section of a conventional MOIS solid-state image sensor, Fig. 2 is an equivalent circuit, Fig. 3 is a cross-sectional view of an embodiment of the present invention, and Fig. 4 ←) to (d) are in accordance with the present invention. 1...P-type silicon substrate 2.4...N-type diffusion layer 3...MOS type transistor 5...gate electrode 6...insulating film 7...° 7 Otodiode 8...Incoming light 9...Deep N-type diffusion layer 10...Shallow N-type diffusion layer 11...Light receiving portion 12...Resist and above Figure 3
Claims (1)
形成された少なくとも２つ以上・の拡散層からなるフォ
トダイオードと、該フォトダイオードの出力を読み出す
ためのスイッチ素子と走査回路からなる固体撮像素子に
おいて、フォトダイオードとなる該拡散層の少なくとも
一部分が、他の部分よりも深いことを特徴とする固体撮
像素子０２、 前記拡散層がＮ型であり、深い部分がリ
ンにより形成され、浅い部分がヒ素により形成されるこ
とを特徴とする特許請求の範囲第１項記載の固体撮像素
子。1. Consists of a semiconductor substrate of one conductivity type, a photodiode consisting of at least two or more diffusion layers formed on the main surface of the semiconductor substrate, and a switching element and a scanning circuit for reading out the output of the photodiode. Solid-state imaging device 02, characterized in that at least a portion of the diffusion layer that becomes a photodiode is deeper than other portions, the diffusion layer is of N type, and the deep portion is formed of phosphorus; 2. The solid-state imaging device according to claim 1, wherein the shallow portion is made of arsenic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126653A JPS6018957A (en) | 1983-07-12 | 1983-07-12 | Solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126653A JPS6018957A (en) | 1983-07-12 | 1983-07-12 | Solid-state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6018957A true JPS6018957A (en) | 1985-01-31 |
Family
ID=14940535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126653A Pending JPS6018957A (en) | 1983-07-12 | 1983-07-12 | Solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018957A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04355964A (en) * | 1990-12-21 | 1992-12-09 | Mitsubishi Electric Corp | Solid-state image pickup device and manufacture thereof |
| US5331164A (en) * | 1991-03-19 | 1994-07-19 | California Institute Of Technology | Particle sensor array |
| US6166405A (en) * | 1998-04-23 | 2000-12-26 | Matsushita Electronics Corporation | Solid-state imaging device |
| JP2005167187A (en) * | 2003-11-13 | 2005-06-23 | Seiko Epson Corp | Solid-state image pickup device and its manufacturing method |
| US7541210B2 (en) | 2004-12-29 | 2009-06-02 | Dongbu Electronics Co., Ltd. | Method for fabricating CMOS image sensor |
-
1983
- 1983-07-12 JP JP58126653A patent/JPS6018957A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04355964A (en) * | 1990-12-21 | 1992-12-09 | Mitsubishi Electric Corp | Solid-state image pickup device and manufacture thereof |
| US5331164A (en) * | 1991-03-19 | 1994-07-19 | California Institute Of Technology | Particle sensor array |
| US6166405A (en) * | 1998-04-23 | 2000-12-26 | Matsushita Electronics Corporation | Solid-state imaging device |
| JP2005167187A (en) * | 2003-11-13 | 2005-06-23 | Seiko Epson Corp | Solid-state image pickup device and its manufacturing method |
| US7541210B2 (en) | 2004-12-29 | 2009-06-02 | Dongbu Electronics Co., Ltd. | Method for fabricating CMOS image sensor |
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