KR930000428A - Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body - Google Patents

Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body Download PDF

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Publication number
KR930000428A
KR930000428A KR1019910009324A KR910009324A KR930000428A KR 930000428 A KR930000428 A KR 930000428A KR 1019910009324 A KR1019910009324 A KR 1019910009324A KR 910009324 A KR910009324 A KR 910009324A KR 930000428 A KR930000428 A KR 930000428A
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KR
South Korea
Prior art keywords
silicon carbide
sintered body
carbide ceramic
producing
transfer tube
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Application number
KR1019910009324A
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Korean (ko)
Inventor
양준환
한인섭
홍기석
Original Assignee
오정무
재단법인 한국동력자원연구소
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Priority to KR1019910009324A priority Critical patent/KR930000428A/en
Publication of KR930000428A publication Critical patent/KR930000428A/en

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Abstract

내용 없음No content

Description

탄화규소질 세라믹 전열관 소결체의 제조방법Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명 중의 성형법의 설명도.1 is an explanatory diagram of a molding method in the present invention.

제2-3도는 본 발명 중의 소결법의 설명도.2-3 is explanatory drawing of the sintering method in this invention.

Claims (4)

일정입도를 갖는 α-SiC분말과 -10㎛의 흑연 분말을 혼합하여 폴리에틸렌 그리콜을 첨가한 후 정수압프레스(6)에서 성형하여 탄화규소질 전열관 성형체(7)을 제조하고, 이를 디본딩하여 진공중에서 금속실리콘(8)을 용융시켜 반응소결시킴으로써 제조함을 특징으로 하는 탄화규소질 세라믹 전열관 소결체의 제조방법.Α-SiC powder having a certain particle size and -10 μm graphite powder were mixed to add polyethylene glycol, and then molded in a hydrostatic pressure press (6) to produce a silicon carbide heat transfer tube molded product (7). A method of producing a silicon carbide ceramic heat pipe sintered body, characterized by melting and reacting and sintering a metal silicon (8). 제1항에 있어서, α-SiC/C의 비율을 90-60/10-40으로 하여 전열관 성형체를 제조하는 것을 특징으로 하는 탄화규소질 세라믹 전열관 소결체의 제조방법.The method for producing a silicon carbide ceramic heat transfer tube sintered body according to claim 1, wherein the heat transfer tube molded body is manufactured using a ratio of α-SiC / C as 90-60 / 10-40. 제1항에 있어서, 실온에서 400℃까지는 공기, 400℃에서 600℃까지는 불활성가스 분위기에서 디본딩을 실시하는 것을 특징으로 하는 탄화규소질 세라믹 전열관 소결체의 제조방법.The method for producing a silicon carbide ceramic heat transfer tube sintered body according to claim 1, wherein debonding is carried out at room temperature to 400 ° C in air and at 400 ° C to 600 ° C in an inert gas atmosphere. 제1항에 있어서, 1550℃이상의 온도, 10-1Torr이하의 진공분위기에서 탄화규소질 전열관 소결체를 제조하는 것을 특징으로 하는 탄화규소질 세라믹 전열관 소결체의 제조방법.The method for producing a silicon carbide ceramic heat pipe sintered body according to claim 1, wherein the silicon carbide heat exchanger tube sintered body is manufactured at a temperature of 1550 ° C. or higher and a vacuum atmosphere of 10 −1 Torr or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910009324A 1991-06-04 1991-06-04 Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body KR930000428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910009324A KR930000428A (en) 1991-06-04 1991-06-04 Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009324A KR930000428A (en) 1991-06-04 1991-06-04 Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body

Publications (1)

Publication Number Publication Date
KR930000428A true KR930000428A (en) 1993-01-15

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ID=67440934

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Application Number Title Priority Date Filing Date
KR1019910009324A KR930000428A (en) 1991-06-04 1991-06-04 Manufacturing Method of Silicon Carbide Ceramic Tube Sintered Body

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KR (1) KR930000428A (en)

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