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Priority to KR1019910009323ApriorityCriticalpatent/KR930000427A/en
Publication of KR930000427ApublicationCriticalpatent/KR930000427A/en
반응소결 탄화규소 소결체의 제조방법Method of manufacturing reaction-sintered silicon carbide sintered body
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (1)
일정입도의 α-SiC분말과 탄소분말을 혼합하고 폴리에틸렌 그리콜을 첨가하여 성형한 후 소성전에 실온에서 400℃까지는 공기, 400℃에서 600℃까지는 불활성가스 분위기에서 디본딩을 실시하고 이를 1550℃이상의 온도, 10-1Torr이하의 진공분위기에서 금속 실리콘을 용융시켜 성형체에 침투시킴으로써 소결하는 반응소결 탄화규소 소결체의 제조방법.After mixing α-SiC powder and carbon powder of certain particle size and adding polyethylene glycol, it is molded and debonded in air at room temperature to 400 ℃ and inert gas atmosphere at 400 ℃ to 600 ℃ before firing. A method for producing a reaction sintered silicon carbide sintered body which is sintered by melting metal silicon in a vacuum at a temperature of 10 −1 Torr or less and infiltrating the molded body.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910009323A1991-06-041991-06-04
Method of manufacturing reaction-sintered silicon carbide sintered body
KR930000427A
(en)
POWDERS OF COMPOSITE MATERIAL OF SILICON NITRIDE / SILICON CARBIDE, ITS PREPARATION AND DEENSIFIED MATERIALS PREPARED USING THE POWDERS OF COMPOSITE MATERIAL.