KR920021444A - 붕소 도프 처리된 다이아몬드 - Google Patents
붕소 도프 처리된 다이아몬드 Download PDFInfo
- Publication number
- KR920021444A KR920021444A KR1019920009124A KR920009124A KR920021444A KR 920021444 A KR920021444 A KR 920021444A KR 1019920009124 A KR1019920009124 A KR 1019920009124A KR 920009124 A KR920009124 A KR 920009124A KR 920021444 A KR920021444 A KR 920021444A
- Authority
- KR
- South Korea
- Prior art keywords
- boron
- doped diamond
- ppm
- doped
- cvd diamond
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/0201—Materials for reed contacts
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 합성 크리스탈 및 CVD 필름에 대해서 ppm단위의 붕소에 대한 ohms-cm단위의 저항성을 나타낸 그래프.
Claims (2)
- 붕소 도프처리되었으며, 붕소 농도 범위가 1000 내지 4500ppm인 CVD다이아몬드.
- 제1항에 있어서, 붕소 농도가 1800ppm이상인 CVD다이아몬드.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB919111474A GB9111474D0 (en) | 1991-05-29 | 1991-05-29 | Boron doped diamond |
| GB9111474.4 | 1991-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR920021444A true KR920021444A (ko) | 1992-12-18 |
Family
ID=10695702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920009124A KR920021444A (ko) | 1991-05-29 | 1992-05-28 | 붕소 도프 처리된 다이아몬드 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0518532A1 (ko) |
| JP (1) | JPH06144993A (ko) |
| KR (1) | KR920021444A (ko) |
| AU (1) | AU1718092A (ko) |
| GB (1) | GB9111474D0 (ko) |
| ZA (1) | ZA923839B (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100497693B1 (ko) * | 1996-07-31 | 2005-09-08 | 드 비어스 인더스트리얼 다이아몬즈 (프로프라이어터리) 리미티드 | 다이아몬드 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362975A (en) * | 1992-09-02 | 1994-11-08 | Kobe Steel Usa | Diamond-based chemical sensors |
| JPH07161455A (ja) * | 1993-12-09 | 1995-06-23 | Sumitomo Electric Ind Ltd | ダイヤモンドヒ−タ |
| DE10080131D2 (de) * | 1999-01-25 | 2002-04-25 | Gfd Ges Fuer Diamantprodukte M | Mikroschaltkontakt |
| US6621022B1 (en) * | 2002-08-29 | 2003-09-16 | Intel Corporation | Reliable opposing contact structure |
| JP4759315B2 (ja) * | 2004-05-21 | 2011-08-31 | 独立行政法人物質・材料研究機構 | 超電導性を有するホウ素ドープダイヤモンド薄膜 |
| GB201905045D0 (en) | 2019-04-09 | 2019-05-22 | Element Six Tech Ltd | Boron doped synthetic diamond electrodes and materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217397A (ja) * | 1989-02-15 | 1990-08-30 | Kobe Steel Ltd | ｎ型半導体ダイヤモンド薄膜の気相合成法 |
| JP2767124B2 (ja) * | 1989-04-07 | 1998-06-18 | 日本特殊陶業株式会社 | 分析・試験・計測用等電極およびこれを使用した酵素センサー |
-
1991
- 1991-05-29 GB GB919111474A patent/GB9111474D0/en active Pending
-
1992
- 1992-05-26 ZA ZA923839A patent/ZA923839B/xx unknown
- 1992-05-27 AU AU17180/92A patent/AU1718092A/en not_active Abandoned
- 1992-05-28 KR KR1019920009124A patent/KR920021444A/ko not_active Application Discontinuation
- 1992-05-29 JP JP4139212A patent/JPH06144993A/ja active Pending
- 1992-05-29 EP EP92304927A patent/EP0518532A1/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100497693B1 (ko) * | 1996-07-31 | 2005-09-08 | 드 비어스 인더스트리얼 다이아몬즈 (프로프라이어터리) 리미티드 | 다이아몬드 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0518532A1 (en) | 1992-12-16 |
| GB9111474D0 (en) | 1991-07-17 |
| ZA923839B (en) | 1993-01-27 |
| AU1718092A (en) | 1993-03-11 |
| JPH06144993A (ja) | 1994-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |