KR920020765A - Anti-Blooming Charge Coupled Device and Manufacturing Method Thereof - Google Patents

Anti-Blooming Charge Coupled Device and Manufacturing Method Thereof Download PDF

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Publication number
KR920020765A
KR920020765A KR1019910005911A KR910005911A KR920020765A KR 920020765 A KR920020765 A KR 920020765A KR 1019910005911 A KR1019910005911 A KR 1019910005911A KR 910005911 A KR910005911 A KR 910005911A KR 920020765 A KR920020765 A KR 920020765A
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KR
South Korea
Prior art keywords
region
forming
well
photodiode
manufacturing
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Application number
KR1019910005911A
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Korean (ko)
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KR940003602B1 (en
Inventor
손동균
이성민
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019910005911A priority Critical patent/KR940003602B1/en
Publication of KR920020765A publication Critical patent/KR920020765A/en
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Publication of KR940003602B1 publication Critical patent/KR940003602B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음No content

Description

안티-블루밍 구조의 전하 결합소자 및 그 제조방법Anti-Blooming Charge Coupled Device and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명 안티-블루밍 구조의 전하 결합소자 공정 단면도.3 is a cross-sectional view of a charge coupled device process of the present invention anti-blooming structure.

제4도는 본 발명의 전위분포를 나타낸 그래프로 (a)는 C-C선 단면도, (b)는 D-D선 단면도.4 is a graph showing the potential distribution of the present invention, (a) is a sectional view taken along the line C-C, (b) is a sectional view taken along the line D-D.

Claims (2)

N형 기판(1)에 P웰을 형성하고 이 P웰에 포토다이오드(10)와 SCCD(8)을 형성한 것에 있어서, 상기 포토다이오드(10)와 BCCD(8)를 전체적으로 감싸도록 P-영역(4)(6)을 형성하고, 상기 BCCD(8)를 감싸도록 형성된 P-영역(4)의 밑부분에는 P+웰(3)을 형성하여서 구성됨을 특징으로 하는 안티-블루밍 구조의 전하 결합소자.In forming a P well on an N-type substrate 1 and forming a photodiode 10 and a SCCD 8 in the P well, a P − region is formed so as to surround the photodiode 10 and the BCCD 8 as a whole. (4) and (6), and formed by forming a P + well (3) at the bottom of the P - region (4) formed to surround the BCCD (8), the charge coupling of the anti-blooming structure device. N형 기판(1)에 포토레지스터(2)를 사용하여 P+웰(3)을 형성하는 공정과, 상기 P+웰(3)에 n형 이온을 낮게 도우핑하여 P-영역(4)을 형성한 후 열처리하는 공정과, 상기 P-영역(4)과 연결되도록 이온을 주입하여 포토 다이오드를 이를 P-영역(6)을 형성하는 공정과, 상기 P-영역(4)에 n형 이온을 주입하BCCD(8)을 형성하는 공정과, 상기 P-영역(6)에는 n형 이온을 주입하여 포토다이오드(10)를 형성하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 안티-블루밍 구조의 전하 결합소자 제조방법.Forming a P + well (3) using a photoresist (2) on the N-type substrate (1), and doping low n-type ions into the P + well (3) to form a P − region (4). after the formation of the heat treatment step, the P-to-step of forming the region 6 the P - - region 4 connected such that the implanting ions photodiode them P and the n-type ions into the regions 4 A charge of an anti-blooming structure, which is performed by sequentially forming the BCCD 8 under implantation and then implanting n-type ions into the P − region 6 to form the photodiode 10. Combined device manufacturing method. * 참고사항 : 최초출원 내용에 의하여 공개하는 것임.* Note: The disclosure is based on the original application.
KR1019910005911A 1991-04-12 1991-04-12 Ccd of anti-blooming structure and fabricating method thereof KR940003602B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910005911A KR940003602B1 (en) 1991-04-12 1991-04-12 Ccd of anti-blooming structure and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910005911A KR940003602B1 (en) 1991-04-12 1991-04-12 Ccd of anti-blooming structure and fabricating method thereof

Publications (2)

Publication Number Publication Date
KR920020765A true KR920020765A (en) 1992-11-21
KR940003602B1 KR940003602B1 (en) 1994-04-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910005911A KR940003602B1 (en) 1991-04-12 1991-04-12 Ccd of anti-blooming structure and fabricating method thereof

Country Status (1)

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KR (1) KR940003602B1 (en)

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Publication number Publication date
KR940003602B1 (en) 1994-04-25

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