KR920010802A - 시료흡착유지장치 - Google Patents
시료흡착유지장치 Download PDFInfo
- Publication number
- KR920010802A KR920010802A KR1019910020334A KR910020334A KR920010802A KR 920010802 A KR920010802 A KR 920010802A KR 1019910020334 A KR1019910020334 A KR 1019910020334A KR 910020334 A KR910020334 A KR 910020334A KR 920010802 A KR920010802 A KR 920010802A
- Authority
- KR
- South Korea
- Prior art keywords
- holding device
- adsorption holding
- sample adsorption
- sample
- pipe
- Prior art date
Links
- 238000001179 sorption measurement Methods 0.000 title claims 8
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S165/00—Heat exchange
- Y10S165/90—Cooling towers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예를 예시하는 정면도,
제2도는 제1도의 평면도,
제3도는 에어냉각장치의 단면도.
Claims (5)
- 시료를 가열수단을 구비한 스테이지상에 진공펌프에 의한 진공흡착에 의해 유지하는 시료흡착유지장치에 있어서, 상기 스테이지와 상기 진공 펌프를 연결하는 파이프 중간에 에어냉각장치를 설치한 것을 특징으로 하는 시료흡착유지장치.
- 제1항에 있어서, 상기 에어냉각장치는 진공에어가 통과하는 나선형상으로 감겨진 파이프와, 이 파이프를 강제냉각시키기 위한 팬으로 이루어진 것을 특징으로 하는 시료흡착유지장치.
- 제2항에 있어서, 상기 나선형상의 파이프는 가는 노선과 오는 노선의 2중구조로 이루어지는 것을 특징으로 하는 시료흡착유지장치.
- 제2항 또는 3항에 있어서, 상기 나선형상의 파이프는 열차폐판의 바깥쪽에 배열설치되어 있는 것을 특징으로 하는 시료흡착유지장치.
- 제1항에 있어서, 상기 에어냉각장치는 진공에어의 흐름이 사행되도록 간막이판으로 간막이된 냉각박스와, 이 냉각박스를 강제 냉각시키기 위한 팬으로 이루어지는 것을 특징으로 하는 시료흡착유지장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2-308717 | 1990-11-16 | ||
JP30871790A JP2923804B2 (ja) | 1990-11-16 | 1990-11-16 | 試料吸着保持装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920010802A true KR920010802A (ko) | 1992-06-27 |
KR950009622B1 KR950009622B1 (ko) | 1995-08-25 |
Family
ID=17984434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910020334A KR950009622B1 (ko) | 1990-11-16 | 1991-11-15 | 본딩장치에 있어서의 반도체 시료흡착유지장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5306139A (ko) |
JP (1) | JP2923804B2 (ko) |
KR (1) | KR950009622B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010002964A (ko) * | 1999-06-15 | 2001-01-15 | 강이주 | 맥반석을 이용한 폐수의 중금속처리방법 |
KR20010002965A (ko) * | 1999-06-14 | 2001-01-15 | 강이주 | 맥반석을 이용한 수용성염료 및 인염폐수처리방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767423A (en) * | 1996-12-04 | 1998-06-16 | Eastman Kodak Company | Sample holder for accelerated fade apparatus and method of its use |
JP4902986B2 (ja) * | 2005-12-01 | 2012-03-21 | 株式会社東京精密 | プローバ、及び、プローバのウェハステージ加熱、又は、冷却方法 |
HUP0900749A2 (en) * | 2009-12-03 | 2012-01-30 | Gea Egi Energiagazdalkodasi Zrt | Cooling system for power plant |
KR101294723B1 (ko) * | 2011-07-01 | 2013-08-19 | 아셈텍(주) | 이산화탄소 응축장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5749388A (en) * | 1980-09-08 | 1982-03-23 | Japanese National Railways<Jnr> | Induced voltage detector for linear synchronous motor |
IT1135516B (it) * | 1981-02-18 | 1986-08-27 | Nuovo Pignone Spa | Condensatore perfezionato di vapore con raffreddamento ad aria |
US4483392A (en) * | 1982-04-01 | 1984-11-20 | Xchanger, Inc. | Air to air heat exchanger |
US4657070A (en) * | 1984-02-15 | 1987-04-14 | Hudson Products Corporation | Air-cooled vapor condensers |
US4872835A (en) * | 1986-07-24 | 1989-10-10 | Hewlett-Packard Company | Hot chuck assembly for integrated circuit wafers |
US4721462A (en) * | 1986-10-21 | 1988-01-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Active hold-down for heat treating |
US4867231A (en) * | 1987-11-09 | 1989-09-19 | Bottum Edward W | Air to air heat exchange structure and method |
DE3852552T2 (de) * | 1987-11-17 | 1995-05-24 | Ebara Shinwa Ltd | Wärmetauscher für einen Kühlturm. |
-
1990
- 1990-11-16 JP JP30871790A patent/JP2923804B2/ja not_active Expired - Lifetime
-
1991
- 1991-11-15 US US07/792,708 patent/US5306139A/en not_active Expired - Fee Related
- 1991-11-15 KR KR1019910020334A patent/KR950009622B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010002965A (ko) * | 1999-06-14 | 2001-01-15 | 강이주 | 맥반석을 이용한 수용성염료 및 인염폐수처리방법 |
KR20010002964A (ko) * | 1999-06-15 | 2001-01-15 | 강이주 | 맥반석을 이용한 폐수의 중금속처리방법 |
Also Published As
Publication number | Publication date |
---|---|
US5306139A (en) | 1994-04-26 |
JPH04181753A (ja) | 1992-06-29 |
KR950009622B1 (ko) | 1995-08-25 |
JP2923804B2 (ja) | 1999-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19980303 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |