KR920008864A - Micro Processing Apparatus and Method - Google Patents

Micro Processing Apparatus and Method Download PDF

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Publication number
KR920008864A
KR920008864A KR1019910017093A KR910017093A KR920008864A KR 920008864 A KR920008864 A KR 920008864A KR 1019910017093 A KR1019910017093 A KR 1019910017093A KR 910017093 A KR910017093 A KR 910017093A KR 920008864 A KR920008864 A KR 920008864A
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KR
South Korea
Prior art keywords
stage
vacuum chamber
reactive gas
counter electrode
sample
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Application number
KR1019910017093A
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Korean (ko)
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KR940010505B1 (en
Inventor
쇼 히로 고메다
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920008864A publication Critical patent/KR920008864A/en
Application granted granted Critical
Publication of KR940010505B1 publication Critical patent/KR940010505B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음No content

Description

미세가공장치 및 방법Micro Processing Apparatus and Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 이 발명의 한 실시예에 의한 플라즈마에칭 장치를 표시한 개략 단면도,1 is a schematic cross-sectional view showing a plasma etching apparatus according to an embodiment of the present invention;

제2도는 이 발명의 다른 실시예에 의한 플라즈마에칭 장치를 표시하는 개략 단면도.2 is a schematic cross-sectional view showing a plasma etching apparatus according to another embodiment of the present invention.

Claims (3)

진공챔버와, 이 진공챔버내에 반응성 가스를 공급하는 반응성 가스 공급수단과, 상기 진공챔버내에 배치되여 시료를 얹어 놓음과 함께 전극이 되여, 적어도 일부가 자성체로 구성된 스테이지와, 상기 시료를 얹어놓은 스테이지에 대향해서 설치된 대향 전극과, 상기 스테이지와 상기 대향 전극과의 사이를 소정의 간격으로 유지하기 위하여 상기 스테이지를 자기부상시키는 자장발생수단과, 상기 진공챔버내를 배기하는 배기수단과를 구비한 것을 특징으로 하는 미세가공장치.A vacuum chamber, a reactive gas supply means for supplying a reactive gas into the vacuum chamber, a stage disposed in the vacuum chamber and placed with a sample, and serving as an electrode, at least part of which is made of a magnetic material, and a stage on which the sample is placed A magnetic field generating means for magnetically floating the stage so as to maintain a space between the stage and the counter electrode at a predetermined interval, and an exhaust means for exhausting the inside of the vacuum chamber. Micro-processing device characterized in that. 진공챔버와, 이진공챔버내에 반응성가스를 공급하는 반응성 가스공급수단과, 상기 진공챔버내에 배치되어 시료를 얹어 놓음과 함께 전극이 되는 스테이지와, 상기 시료를 얹어놓은 스테이지에 대향해서 설치되여, 적어도 일부가 자성체로 구성된 대향 전극과, 상기 스테이지와 상기 대향 전극과의 사이를 소정의 간격으로 유지하기 위하여 상기 대향 전극을 자기 부상시키는 자장발생수단과, 상기 진공 챔버내를 배기하는 배기수단과를 구비한 것을 특징으로 하는 미세가공장치.A vacuum chamber, reactive gas supply means for supplying a reactive gas into the vacuum chamber, a stage which is disposed in the vacuum chamber and serves as an electrode together with a sample placed thereon, and is provided opposite to the stage on which the sample is placed; A counter electrode, part of which is formed of magnetic material, magnetic field generating means for magnetically floating the counter electrode in order to maintain the space between the stage and the counter electrode, and exhaust means for exhausting the inside of the vacuum chamber; Micro-processing device characterized in that. 미세가공되는 시료를 진공챔버내의 스테이지상에 얹어놓고, 상기 진공챔버내를 소정의 진공도까지 배기하고, 상기 진공챔버내에 반응성가스를 공급하고, 상기 스테이지 또는 이 스테이지에 대향하여 설치된 대향 전극에 자장발생 수단에 의하여 자장을 인가하여 부상시키고, 스테이지와 대향전극과를 소정의 간격으로 유지하고, 잇따라, 상기 스테이지 및 상기 대향전극에 의하여 상기 반응성가스의 플라즈마를 상기 진공챔버내에 발생시켜서, 상기 시료의 미세가공을 행하는 것을 특징으로 하는 미세가공방법.A sample to be microfabricated is placed on a stage in a vacuum chamber, the vacuum chamber is evacuated to a predetermined degree of vacuum, a reactive gas is supplied into the vacuum chamber, and a magnetic field is generated at the stage or an opposite electrode provided to face the stage. The magnetic field is applied and floated by means, and the stage and the counter electrode are held at predetermined intervals. Subsequently, the plasma of the reactive gas is generated in the vacuum chamber by the stage and the counter electrode, whereby Micromachining method characterized by performing the processing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910017093A 1990-10-03 1991-09-30 Fine processing method and device thereby KR940010505B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2263872A JPH04142734A (en) 1990-10-03 1990-10-03 Fine processing device and method
JP1990-263872 1990-10-03

Publications (2)

Publication Number Publication Date
KR920008864A true KR920008864A (en) 1992-05-28
KR940010505B1 KR940010505B1 (en) 1994-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017093A KR940010505B1 (en) 1990-10-03 1991-09-30 Fine processing method and device thereby

Country Status (3)

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JP (1) JPH04142734A (en)
KR (1) KR940010505B1 (en)
DE (1) DE4132730C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2501948B2 (en) * 1990-10-26 1996-05-29 三菱電機株式会社 Plasma processing method and plasma processing apparatus
KR101510269B1 (en) * 2008-07-28 2015-04-14 주성엔지니어링(주) Substrate processing equipment and method for forming thin film using the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608306B2 (en) * 1978-12-27 1985-03-01 株式会社日立製作所 surface treatment equipment
JPS5715424A (en) * 1980-07-01 1982-01-26 Matsushita Electric Ind Co Ltd Dry etching method
JPS5723226A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPS58139439A (en) * 1982-02-15 1983-08-18 Nippon Telegr & Teleph Corp <Ntt> Feeding device for wafer
JPS58200529A (en) * 1982-05-19 1983-11-22 Hitachi Ltd Plasma processing apparatus
JPS6036222A (en) * 1983-08-05 1985-02-25 Irie Koken Kk Article conveying device under high-vaccum
JPH0765197B2 (en) * 1983-11-04 1995-07-12 株式会社日立製作所 Vacuum processing device
JPS60103620A (en) * 1983-11-11 1985-06-07 Hitachi Ltd Plasma treatment device
JPS60248518A (en) * 1984-05-23 1985-12-09 Seiko Epson Corp Conveyor
JPS63173307A (en) * 1987-01-13 1988-07-16 Yuugou Giken:Kk Magnetic levitation carrying system in ultra-high vacuum vessel made of ceramic
JPS6471120A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Heating equipment
JPH01302820A (en) * 1988-05-31 1989-12-06 Fujitsu Ltd Control device for dry etching device
JPH0762252B2 (en) * 1988-06-13 1995-07-05 旭硝子株式会社 Vacuum processing device
JPH01205438A (en) * 1988-10-12 1989-08-17 Hitachi Ltd Magnetic-levitation-type transfer apparatus
DE3914065A1 (en) * 1989-04-28 1990-10-31 Leybold Ag DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES
DE3935189A1 (en) * 1989-10-23 1991-05-08 Leybold Ag Ionic etching substrates of silicon di:oxide coated - with poly-silicon or silicide layers-using etching gas of chlorine, silicon chloride and nitrogen
JPH04111313A (en) * 1990-08-31 1992-04-13 Mitsubishi Electric Corp Method and apparatus for fine processing
JPH04111312A (en) * 1990-08-31 1992-04-13 Mitsubishi Electric Corp Method and apparatus for fine processing

Also Published As

Publication number Publication date
DE4132730C2 (en) 1994-11-10
JPH04142734A (en) 1992-05-15
DE4132730A1 (en) 1992-04-09
KR940010505B1 (en) 1994-10-24

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