KR920008038B1 - Pbtio3 film manufacturing method on silicon substrate - Google Patents
Pbtio3 film manufacturing method on silicon substrate Download PDFInfo
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- KR920008038B1 KR920008038B1 KR1019900005604A KR900005604A KR920008038B1 KR 920008038 B1 KR920008038 B1 KR 920008038B1 KR 1019900005604 A KR1019900005604 A KR 1019900005604A KR 900005604 A KR900005604 A KR 900005604A KR 920008038 B1 KR920008038 B1 KR 920008038B1
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- Prior art keywords
- pbtio3
- silicon substrate
- thin film
- silicon
- substrate
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims abstract description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 7
- 230000005587 bubbling Effects 0.000 claims abstract description 3
- 238000001704 evaporation Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 2
- 229910003781 PbTiO3 Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 6
- 229910052719 titanium Inorganic materials 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 125000000963 oxybis(methylene) group Chemical group [H]C([H])(*)OC([H])([H])* 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
제1도는 종래의 PbTiO3박막 제조공정도.1 is a
제2도는 본 발명에 따른 PbTiO3박막 제조공정도.2 is a manufacturing process diagram of
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘기판 2 : Pt층1: silicon substrate 2: Pt layer
3 : PbTiO3박막 4 : Ti층3: PbTiO3 thin film 4: Ti layer
5 : Ti실리사이드5: Ti silicide
본 발명은 실리콘 기판상에 PbTiO3를 성장시키는 방법에 관한 것으로 특히 실리콘 기판위의 Ti(티타늄) Pb(납)을 직접 반응시켜 제작하여 메모리소자의 SiO2(이산화실리콘) 박막의 대체에 적합하도록한 실리콘 기판위의 PbTiO3박막 제조방법에 관한 것이다. 종래의 PbTiO3의 박막 형성 공정에는 스포터링 방법과 CVD 이온 비임 스포터링(sputtering) 방식등으로 제조하였다.The present invention relates to a method of growing PbTiO3 on a silicon substrate, and in particular, a silicon made by directly reacting Ti (titanium) Pb (lead) on a silicon substrate to be suitable for replacing a SiO2 (silicon dioxide) thin film of a memory device. A method for producing a
PbTiO3의 기판으로서는 Pt(백금)MgO등이 이용되었으며 이는 스포터링이나 CVD 공정중에 Pb와의 반응을 억제하기 위한 것이다. 스포터링 방식으로 박막을 제조할 경우 PbTiO3의 세라믹(ceramic) 제조공정을 거쳐 타기트(Target)물질을 만들며 CVD의 경우 PbO의 증발과 Ti(C2H4O)4를 증발시켜 O2분위기에서 PbTiO3를 형성하는 것이다. CVD 방법을 사용할 경우 그 반응식을 보면 PbO+Ti+O2→PbTiO3이다. 이렇게 생성된 박막은 유전율이 100~200에 이르며 SiO2유전율 3.9에 비하여 25~50배에 이른다.Pt (Platinum) MgO and the like have been used as the substrate of PbTiO3, and this is to suppress the reaction with Pb during the spotting or CVD process. When producing a thin film by spokes gettering way through the ceramic (ceramic) production process of PbTiO 3 makes the ride agent (Target) material for CVD to evaporate the PbO evaporation and Ti (C2H4O) 4 for forming a PbTiO3 in O2 atmosphere will be. In the case of using the CVD method, the reaction equation is PbO + Ti + O2 → PbTiO3. The thin film thus formed has a dielectric constant of 100 to 200 and is 25 to 50 times higher than that of SiO 2 dielectric constant of 3.9.
이를 정전용량(capacitance)값에 적용하면
PbTiO3를 실리콘 기판에 증착시킬 경우 실리콘이 분위기 가스인 O2(산소)와 결합하여 실리콘 계면에 SiO2가 형성되어 순수 PbTiO3를 얻기가 대단히 어려우며 또한 SiO2와 직렬 연결되어 정전용량이 크게 감소한다.When PbTiO3 is deposited on a silicon substrate, it is very difficult to obtain pure PbTiO3 by combining silicon with O2 (oxygen), which is an atmospheric gas, to form pure PbTiO3 at the silicon interface.
그리고 정전용량이 크게 감소하는 것을 방지하기 위해 실리콘 기판위에 Pt(백금)(2)을 서포터링하여 PbTiO3박막(3)을 형성하는 방법이 적용된다.In order to prevent the capacitance from being greatly reduced, a method of forming a
그런데 상기와 같은 종래의 방식으로 고유전박막인 PbTiO3를 형성할 경우 실리콘 계면에서 접착력이 약하며 또한 분위긴 가스인 O2와 실리콘이 반응하여 정전용량이 감소하고 또 정전용량이 감소하는 것을 방지하기 위하여 백금을 먼저 형성시켜 PbTiO3박막을 형성하나 역시 Pt(백금)와 PbTiO3의 계면에서의 접착력이 떨어질 뿐만아니라 Pt(백금) 증착시 두께가 증가하게 되는 단점이 있었다.However, when forming the high dielectric thin film PbTiO3 by the conventional method as described above, platinum is weak at the silicon interface and platinum is reacted to prevent the capacitance and the capacitance from decreasing by reacting silicon with O2, which is a long gas. Was formed first to form a PbTiO3 thin film, but also had a disadvantage in that the adhesion at the interface between Pt (platinum) and PbTiO3 was reduced and the thickness increased when Pt (platinum) was deposited.
본 발명은 이러한 단점을 해결하기 위하여 제2도에 도시된 바와같이 실리콘(1) 기판상에 Ti(티타늄)(4)을 1000∼2500Å 스포터링으로 입힌후 350∼500℃의 N2(질소) 분위기에서 실리콘(1)과 Ti층(티타늄층)(4) 계면사이에 Ti실리사이드(5)를 형성시켜 실리콘(1)과 Ti층(4) 사이의 접촉저항을 감소시키면서 두물질간의 접착력을 향상시킨다.In order to solve this disadvantage, the present invention is coated with Ti (Titanium) 4 on a silicon (1) substrate with 1000 to 2500 microwatts of spotting, as shown in FIG. Ti silicide (5) is formed between the silicon (1) and the Ti layer (titanium layer) 4 interface to improve the adhesion between the two materials while reducing the contact resistance between the silicon (1) and the Ti layer (4). .
이때 1000∼1200℃ 사이에 Pb(납) 혹은 PbO를 증발시키고 Ti(C2H5O)를 N2 가스로 버블링(Bubbling)하며 기판온도를 450∼700℃로 가열하여 반응시킨다.At this time, Pb (lead) or PbO is evaporated between 1000-1200 ° C, bubbling Ti (C2H5O) with N2 gas, and the substrate temperature is heated to 450-700 ° C for reaction.
이때 실리콘기판(1)상의 Ti는 Pb와 분위기 가스 O2와 반응하여 실리사이드(Silicide)(5)가 형성된 부위까지 반응하여 간다.At this time, Ti on the
상기와 같은 방법으로 제작된 PbTiO3박막(3)은 실리콘기판(1)에 SiO2를 전혀 형성치 않으며 PbTiO3의 고유유전율 100∼200을 아무런 손실없이 얻을 수 있다.The PbTiO3
또한 실리콘 기판(1)상의 Ti와 직접반응케하여 양질의 PbTiO3(3)를 제조하며 실리콘과의 계면에서 발생되는 접촉 저항을 실리사이드(5)로 해결함과 동시에 접착력을 향상하게 되고 또 본 발명으로 제작된 PbTiO3는 SiO2에 비해 정전용량을 25∼50배로 증가시켜 작은 면적에서도 높은 정전용량을 얻는다.In addition, by directly reacting with Ti on the silicon substrate (1) to produce a high-quality PbTiO3 (3) and to solve the contact resistance generated at the interface with the silicon with the silicide (5) and at the same time improve the adhesion The prepared PbTiO3 increases the capacitance by 25 to 50 times compared to SiO2 to obtain high capacitance even in a small area.
따라서 본 발명은 실리콘 기판상에 PbTiO3 고유전 박막을 직접 제조할 수 있도록 고안하므로써 메모리 소자의 SiO2의 대체물질로 사용할 수 있어 스택(stack) 혹은 트렌치(trench)공정을 이용하여 유효면적의 증가로 정전용량을 증가시키려는 복잡한 방법을 간소화할 수 있다.Therefore, the present invention is designed to manufacture PbTiO3 high-k dielectric thin film directly on a silicon substrate, so that it can be used as a substitute for SiO2 in memory devices, and can be electrostatically increased by increasing the effective area using a stack or trench process. You can simplify the complex ways of increasing capacity.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900005604A KR920008038B1 (en) | 1990-04-20 | 1990-04-20 | Pbtio3 film manufacturing method on silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900005604A KR920008038B1 (en) | 1990-04-20 | 1990-04-20 | Pbtio3 film manufacturing method on silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910019150A KR910019150A (en) | 1991-11-30 |
| KR920008038B1 true KR920008038B1 (en) | 1992-09-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900005604A KR920008038B1 (en) | 1990-04-20 | 1990-04-20 | Pbtio3 film manufacturing method on silicon substrate |
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| KR (1) | KR920008038B1 (en) |
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1990
- 1990-04-20 KR KR1019900005604A patent/KR920008038B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR910019150A (en) | 1991-11-30 |
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