KR920007847B1 - 스퍼터 코팅 장치 및 방법 - Google Patents

스퍼터 코팅 장치 및 방법 Download PDF

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Publication number
KR920007847B1
KR920007847B1 KR1019850003386A KR850003386A KR920007847B1 KR 920007847 B1 KR920007847 B1 KR 920007847B1 KR 1019850003386 A KR1019850003386 A KR 1019850003386A KR 850003386 A KR850003386 A KR 850003386A KR 920007847 B1 KR920007847 B1 KR 920007847B1
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KR
South Korea
Prior art keywords
target
pole
circular
sputter
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850003386A
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English (en)
Korean (ko)
Other versions
KR850008362A (ko
Inventor
알. 보이즈 도날드
Original Assignee
배리안 어소시에이츠, 인코포레이티드
스탠리 지. 코올
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24449491&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR920007847(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 배리안 어소시에이츠, 인코포레이티드, 스탠리 지. 코올 filed Critical 배리안 어소시에이츠, 인코포레이티드
Publication of KR850008362A publication Critical patent/KR850008362A/ko
Application granted granted Critical
Publication of KR920007847B1 publication Critical patent/KR920007847B1/ko
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1019850003386A 1984-05-17 1985-05-17 스퍼터 코팅 장치 및 방법 Expired KR920007847B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61155484A 1984-05-17 1984-05-17
US611,554 1984-05-17
US611544 1984-05-17

Publications (2)

Publication Number Publication Date
KR850008362A KR850008362A (ko) 1985-12-16
KR920007847B1 true KR920007847B1 (ko) 1992-09-18

Family

ID=24449491

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850003386A Expired KR920007847B1 (ko) 1984-05-17 1985-05-17 스퍼터 코팅 장치 및 방법

Country Status (4)

Country Link
EP (1) EP0162643B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60255974A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR920007847B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3569434D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207575A (ja) * 1985-03-11 1986-09-13 Hitachi Ltd 円板状被成膜基板両面への同時スパッタリング方法およびその装置
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
US4824540A (en) * 1988-04-21 1989-04-25 Stuart Robley V Method and apparatus for magnetron sputtering
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
WO1992004483A1 (en) * 1990-08-29 1992-03-19 Materials Research Corporation Method of enhancing the performance of a magnetron sputtering target
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
CN115386850B (zh) * 2022-08-30 2023-12-29 上海积塔半导体有限公司 磁控溅射沉积装置
CN116356273B (zh) * 2023-03-31 2025-05-16 广东利元亨智能装备股份有限公司 一种异质结tco薄膜的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4431505A (en) * 1982-08-16 1984-02-14 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials

Also Published As

Publication number Publication date
EP0162643A1 (en) 1985-11-27
JPH0321629B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-25
DE3569434D1 (en) 1989-05-18
JPS60255974A (ja) 1985-12-17
KR850008362A (ko) 1985-12-16
EP0162643B1 (en) 1989-04-12

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