DE3569434D1 - Sputter coating source having plural target rings - Google Patents

Sputter coating source having plural target rings

Info

Publication number
DE3569434D1
DE3569434D1 DE8585303333T DE3569434T DE3569434D1 DE 3569434 D1 DE3569434 D1 DE 3569434D1 DE 8585303333 T DE8585303333 T DE 8585303333T DE 3569434 T DE3569434 T DE 3569434T DE 3569434 D1 DE3569434 D1 DE 3569434D1
Authority
DE
Germany
Prior art keywords
sputter coating
coating source
plural target
target rings
rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585303333T
Other languages
German (de)
English (en)
Inventor
Donald R Boys
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24449491&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3569434(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3569434D1 publication Critical patent/DE3569434D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE8585303333T 1984-05-17 1985-05-10 Sputter coating source having plural target rings Expired DE3569434D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61155484A 1984-05-17 1984-05-17

Publications (1)

Publication Number Publication Date
DE3569434D1 true DE3569434D1 (en) 1989-05-18

Family

ID=24449491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303333T Expired DE3569434D1 (en) 1984-05-17 1985-05-10 Sputter coating source having plural target rings

Country Status (4)

Country Link
EP (1) EP0162643B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60255974A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR920007847B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3569434D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207575A (ja) * 1985-03-11 1986-09-13 Hitachi Ltd 円板状被成膜基板両面への同時スパッタリング方法およびその装置
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
US4824540A (en) * 1988-04-21 1989-04-25 Stuart Robley V Method and apparatus for magnetron sputtering
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
AU8509491A (en) * 1990-08-29 1992-03-30 Materials Research Corporation Method of enhancing the performance of a magnetron sputtering target
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
CN115386850B (zh) * 2022-08-30 2023-12-29 上海积塔半导体有限公司 磁控溅射沉积装置
CN116356273B (zh) * 2023-03-31 2025-05-16 广东利元亨智能装备股份有限公司 一种异质结tco薄膜的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
US4431505A (en) * 1982-08-16 1984-02-14 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials

Also Published As

Publication number Publication date
EP0162643B1 (en) 1989-04-12
JPH0321629B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-25
EP0162643A1 (en) 1985-11-27
KR920007847B1 (ko) 1992-09-18
KR850008362A (ko) 1985-12-16
JPS60255974A (ja) 1985-12-17

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee