KR920005394A - Method of manufacturing single crystal silicon solar cell - Google Patents

Method of manufacturing single crystal silicon solar cell Download PDF

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Publication number
KR920005394A
KR920005394A KR1019900013679A KR900013679A KR920005394A KR 920005394 A KR920005394 A KR 920005394A KR 1019900013679 A KR1019900013679 A KR 1019900013679A KR 900013679 A KR900013679 A KR 900013679A KR 920005394 A KR920005394 A KR 920005394A
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South Korea
Prior art keywords
single crystal
solar cell
crystal silicon
wafer
manufacturing
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KR1019900013679A
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Korean (ko)
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KR930004126B1 (en
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이규정
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이헌조
주식회사 금성사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음No content

Description

제목 단결정 실리콘 태양전지의 제조방법Title Method for Manufacturing Monocrystalline Silicon Solar Cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도 (가)(나)는 본 발명의 제조공정 설명도.Figure 3 (a) (b) is an explanatory diagram of the manufacturing process of the present invention.

Claims (5)

단결정 실리콘을 이용한 확산접합형 태양전지 제조에 있어서, P형 실리콘 웨이퍼를 표면상의 산화막과 유기물 및 불순물 제거를 위해 세척하는 단계와, 수산화 칼슘과 이소프로필 알콜 및 물을 적절히 혼합한 용액으로 웨이퍼 앞뒤 양면을 텍스취에치하는 단계, 웨이퍼 앞뒤 양면에 균일한 면저항이 얻어지도록 고체소스를 이용하여 확산시키는 단계, 리프트 오프 방법으로서 포토리지스트를 클로로벤젠을 이용하여 돌출구조로 형성하고 이어 3층 전극을 형성하는 단계, 실리콘 식각법을 이용하여 태양전지을 분리시킨후 반사 방지막코팅을 실시하는 단계가 차례로 포함됨을 특징으로하는 단결정 실리콘 태양전지의 제조방법.In the fabrication of diffusion junction solar cell using single crystal silicon, the P-type silicon wafer is washed to remove oxides, organic matters and impurities on the surface, and a mixture of calcium hydroxide, isopropyl alcohol, and water is mixed with both sides of the wafer. Texture-etching, diffusing a solid source to obtain uniform sheet resistance on both the front and back sides of the wafer, and forming a photoresist as a protrusion using chlorobenzene as a lift-off method. Forming, separating the solar cells using a silicon etching method and then performing a step of the anti-reflective coating is characterized in that the manufacturing method of a single crystal silicon solar cell characterized in that it comprises. 제1항에 있어서, 텍스취 에치는 500㎖의 탈이온수에 7.65㎖의 KoH를 섞은다음 핫 플레이트에서 65℃까지 온도를 올린후에 37.5㎖의 이소프로필 알콜을 섞어 에치용액을 만드는 단계와, 상기 용액에 관측용 웨이퍼를 넣고 온도를 85℃까지 올리면서 45분간 에치하는 단계, 상기 관측용 웨이퍼를 꺼내서 확인한후 온도 약 85℃의 온도에서 약 45분간 에치하는 단계가 차례로 진행되어 이루어짐을 특징으로 하는 단결정 실리콘 태양전지의 제조방법.The method of claim 1, wherein the texture etch is prepared by mixing 7.65 ml of KoH in 500 ml of deionized water and raising the temperature to 65 ° C. on a hot plate, followed by mixing 37.5 ml of isopropyl alcohol to form an etch solution. Etching the wafer for 45 minutes while placing the observation wafer in the temperature up to 85 ℃, after taking out the observation wafer to check the temperature for about 45 minutes at a temperature of about 85 ℃ characterized in that the progress is made in order Method of manufacturing a single crystal silicon solar cell. 제1항에 있어서, 3층 전극은 Ti/Pd/Ag구조로함을 특징으로 하는 단결정 실리콘 태양전지의 제조방법.The method of manufacturing a single crystal silicon solar cell according to claim 1, wherein the three-layer electrode has a Ti / Pd / Ag structure. 제3항에 있어서, Ti/Pd/Ag구조는 진공도 10-7torr이하의 상태에서 전자비임 증착기를 이용하여 Ti를 약500Å의 두께로 증착하고 Pd, Ag는 열증착기를 이용하여 약 500Å 및 약 1000Å의 두께로 증착하여 형성함을 특징으로 하는 단결정 실리콘 태양전지의 제조방법.The Ti / Pd / Ag structure according to claim 3, wherein the Ti / Pd / Ag structure is deposited to a thickness of about 500 kW using an electron beam evaporator at a vacuum degree of 10 −7 torr or less, and Pd and Ag are about 500 kW and about 120 kW using a thermal evaporator. A method of manufacturing a single crystal silicon solar cell, characterized in that formed by depositing at a thickness of 1000Å. 제1항에 있어서, 돌출구조는 포토리지스트를 4000rpm의 속도에서 코팅한후 약 95℃에서 25분간 소프트 베이크하는 단계와, 약 10초간 자외선을 조사한 다음 약 10분간 클로로벤젠에 담구는 단계, 용액(현상액:탈이온수=1:3.5)에서 90초동안 현상하는 단계를 차례로 진행함으로써 형성됨을 특징으로 하는 단결정 실리콘 태양전지의 제조방법.The method of claim 1, wherein the protruding structure is a step of coating the photoresist at a speed of 4000rpm and then soft-baking at about 95 ℃ for 25 minutes, irradiated with ultraviolet light for about 10 seconds and then immersed in chlorobenzene for about 10 minutes, the solution (Developer: Deionized water = 1: 3.5) A manufacturing method of a single crystal silicon solar cell, characterized in that formed by successively proceeding the step of developing for 90 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900013679A 1990-08-31 1990-08-31 Single crystal solar cell manufacture method KR930004126B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900013679A KR930004126B1 (en) 1990-08-31 1990-08-31 Single crystal solar cell manufacture method

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Application Number Priority Date Filing Date Title
KR1019900013679A KR930004126B1 (en) 1990-08-31 1990-08-31 Single crystal solar cell manufacture method

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KR920005394A true KR920005394A (en) 1992-03-28
KR930004126B1 KR930004126B1 (en) 1993-05-20

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120291864A1 (en) * 2009-11-30 2012-11-22 Nexcon Tec., Ltd. Solar cell and solar cell fabrication method
DE102012107669B4 (en) * 2012-08-21 2019-05-09 Solarworld Industries Gmbh A method for treating the surface of pre-etched silicon wafers and the use of a silicon wafer in a solar cell
KR102016767B1 (en) * 2013-02-28 2019-09-02 한국교통대학교산학협력단 Patterning method of electrode of solar cell and electrode of solar using the same
CN104157732B (en) * 2014-07-31 2016-05-04 江苏荣马新能源有限公司 A kind of solar battery diffusion technology
KR102016855B1 (en) * 2018-05-21 2019-10-21 한국교통대학교산학협력단 Patterning method of electrode of solar cell and electrode of solar using the same

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