KR920005256A - 정전 흡착 방법 - Google Patents

정전 흡착 방법 Download PDF

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Publication number
KR920005256A
KR920005256A KR1019910013572A KR910013572A KR920005256A KR 920005256 A KR920005256 A KR 920005256A KR 1019910013572 A KR1019910013572 A KR 1019910013572A KR 910013572 A KR910013572 A KR 910013572A KR 920005256 A KR920005256 A KR 920005256A
Authority
KR
South Korea
Prior art keywords
adsorption
adsorbed
adsorbing
electrostatic adsorption
adsorption method
Prior art date
Application number
KR1019910013572A
Other languages
English (en)
Other versions
KR950006346B1 (ko
Inventor
께이 하또리
마꼬또 세끼네
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR920005256A publication Critical patent/KR920005256A/ko
Application granted granted Critical
Publication of KR950006346B1 publication Critical patent/KR950006346B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H01J2237/0047—Neutralising arrangements of objects being observed or treated using electromagnetic radiations, e.g. UV, X-rays, light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

정전 흡착 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 실시예의 정전 흡착 방법에 이용되는 정전 흡착 장치의 개략도.

Claims (2)

  1. 흡착 부재(2)상에 피흡착 부재(3)을 탑재하여 흡착 부재에 설치된 전극(1)에 (+)(-)중 어느 전위를 인가해서 흡착 부재와 피흡착 부재를 정전 흡착시켜 소정의 처리를 행하는 공정, 상기 피흡착 부재를 상기 흡착 부재에서 분리하는 공정, 및 상기 흡착 부재를 가스 플라즈마에 쪼여서 상기 흡착 부재를 스퍼터링하여 흡착 부재와 함께 흡착 부재상의 잔류 전하를 제거하는 공정을 구비하는 것을 특징으로 하는 정전 흡착 방법.
  2. 흡착 부재(2)상에 피흡착 부재(3)을 탑재하여 흡착 부재에 설치된 전극(1)에(+)(-)중 어느 전위를 인가해서 흡착 부재와 피흡착 부재를 정전 흡착시켜 소정의 처리를 행하는 공정, 상기 피흡착 부재를 상기 흡착 부재에서 분리하는 공정, 및 상기 흡착 부재에 에칭 효과가 있는 가스 플라즈마에 쪼여서 상기 흡착 부재를 에칭해서 흡착 부재와 함께 흡착 부재상의 잔류전하를 제거하는 공정을 구비하는 것을 특징으로 하는 정전 흡착 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910013572A 1990-08-07 1991-08-06 정전 흡착 방법 KR950006346B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-207551 1990-08-07
JP20755190A JPH06103683B2 (ja) 1990-08-07 1990-08-07 静電吸着方法

Publications (2)

Publication Number Publication Date
KR920005256A true KR920005256A (ko) 1992-03-28
KR950006346B1 KR950006346B1 (ko) 1995-06-14

Family

ID=16541609

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013572A KR950006346B1 (ko) 1990-08-07 1991-08-06 정전 흡착 방법

Country Status (3)

Country Link
US (1) US5221450A (ko)
JP (1) JPH06103683B2 (ko)
KR (1) KR950006346B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220036625A (ko) * 2020-09-16 2022-03-23 (주)에스티아이 발광 소자를 구비한 표시 장치의 개보수 장치

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US5283087A (en) * 1988-02-05 1994-02-01 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
JP3315197B2 (ja) * 1993-05-17 2002-08-19 東京エレクトロン株式会社 プラズマ処理方法
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
TW288253B (ko) * 1994-02-03 1996-10-11 Aneruba Kk
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
GB2293689A (en) * 1994-09-30 1996-04-03 Nec Corp Electrostatic chuck
JP3208029B2 (ja) * 1994-11-22 2001-09-10 株式会社巴川製紙所 静電チャック装置およびその作製方法
TW286414B (en) * 1995-07-10 1996-09-21 Watkins Johnson Co Electrostatic chuck assembly
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
US5861086A (en) * 1997-03-10 1999-01-19 Applied Materials, Inc. Method and apparatus for sputter etch conditioning a ceramic body
US5986874A (en) * 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
US5886865A (en) * 1998-03-17 1999-03-23 Applied Materials, Inc. Method and apparatus for predicting failure of an eletrostatic chuck
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6057244A (en) * 1998-07-31 2000-05-02 Applied Materials, Inc. Method for improved sputter etch processing
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6790375B1 (en) 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
TW552306B (en) * 1999-03-26 2003-09-11 Anelva Corp Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus
US6099697A (en) * 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US20050211264A1 (en) * 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
JP2005285825A (ja) * 2004-03-26 2005-10-13 Advantest Corp 静電チャック及び静電チャックによる基板固定方法
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
CN100399504C (zh) * 2005-12-02 2008-07-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片卸载工艺
CN100397566C (zh) * 2005-12-02 2008-06-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种减少等离子损伤的硅片卸载工艺
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220036625A (ko) * 2020-09-16 2022-03-23 (주)에스티아이 발광 소자를 구비한 표시 장치의 개보수 장치

Also Published As

Publication number Publication date
JPH0499024A (ja) 1992-03-31
KR950006346B1 (ko) 1995-06-14
US5221450A (en) 1993-06-22
JPH06103683B2 (ja) 1994-12-14

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