KR920004148A - 정렬된 초전도 박막 및 그것을 에피택셜처럼 성장시키는 방법 - Google Patents
정렬된 초전도 박막 및 그것을 에피택셜처럼 성장시키는 방법 Download PDFInfo
- Publication number
- KR920004148A KR920004148A KR1019910014322A KR910014322A KR920004148A KR 920004148 A KR920004148 A KR 920004148A KR 1019910014322 A KR1019910014322 A KR 1019910014322A KR 910014322 A KR910014322 A KR 910014322A KR 920004148 A KR920004148 A KR 920004148A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- fluorinated
- providing
- substrate
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims description 48
- 239000000463 material Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 34
- 238000000151 deposition Methods 0.000 claims 16
- 230000008021 deposition Effects 0.000 claims 10
- 239000010408 film Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 229910016036 BaF 2 Inorganic materials 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- 239000013077 target material Substances 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 claims 1
- 208000003098 Ganglion Cysts Diseases 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 208000005400 Synovial Cyst Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
- Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/570,190 US5124310A (en) | 1990-08-20 | 1990-08-20 | Laser ablation method for depositing fluorinated y-ba-cu-o superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates |
| US7/570,190 | 1990-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR920004148A true KR920004148A (ko) | 1992-03-27 |
Family
ID=24278626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910014322A Withdrawn KR920004148A (ko) | 1990-08-20 | 1991-08-20 | 정렬된 초전도 박막 및 그것을 에피택셜처럼 성장시키는 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5124310A (enExample) |
| EP (1) | EP0472159B1 (enExample) |
| JP (1) | JPH04305016A (enExample) |
| KR (1) | KR920004148A (enExample) |
| AT (1) | ATE140104T1 (enExample) |
| CA (1) | CA2049523A1 (enExample) |
| DE (1) | DE69120610T2 (enExample) |
| TW (1) | TW218859B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05804A (ja) * | 1990-08-01 | 1993-01-08 | Sumitomo Electric Ind Ltd | 大面積複合酸化物超電導薄膜の成膜装置 |
| US5426092A (en) * | 1990-08-20 | 1995-06-20 | Energy Conversion Devices, Inc. | Continuous or semi-continuous laser ablation method for depositing fluorinated superconducting thin film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates |
| US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
| US5406906A (en) * | 1994-01-18 | 1995-04-18 | Ford Motor Company | Preparation of crystallographically aligned films of silicon carbide by laser deposition of carbon onto silicon |
| US5591696A (en) * | 1994-10-06 | 1997-01-07 | Board Of Regents, The University Of Texas System | Chemically tailored corrosion resistant high-TC superconductors |
| US5660746A (en) * | 1994-10-24 | 1997-08-26 | University Of South Florida | Dual-laser process for film deposition |
| US5846909A (en) * | 1995-05-22 | 1998-12-08 | University Of Texas System | Molecular level, precision control over the interfacial properties of high-TC superconductor structures and devices |
| WO1998058415A1 (en) * | 1997-06-18 | 1998-12-23 | Massachusetts Institute Of Technology | Controlled conversion of metal oxyfluorides into superconducting oxides |
| DE10163125A1 (de) * | 2001-12-20 | 2003-07-10 | Nexans Superconductors Gmbh | Verfahren zum Herstellen texturierter supraleitender Dickschichten sowie damit erhältliche biaxiale texturierte Supraleiterstrukturen |
| US20040023810A1 (en) * | 2002-07-26 | 2004-02-05 | Alex Ignatiev | Superconductor material on a tape substrate |
| US20050159298A1 (en) * | 2004-01-16 | 2005-07-21 | American Superconductor Corporation | Oxide films with nanodot flux pinning centers |
| US7687436B2 (en) * | 2005-12-02 | 2010-03-30 | University Of Dayton | Flux pinning enhancements in superconductive REBa2CU3O7-x (REBCO) films and method of forming thereof |
| WO2008109564A1 (en) * | 2007-03-02 | 2008-09-12 | The Regents Of The University Of California | Complex oxides useful for thermoelectric energy conversion |
| CN109362239B (zh) * | 2016-03-23 | 2022-10-21 | 南非大学 | 基于飞秒激光的超导薄膜上制备微纳米收缩结构的方法 |
| US20180151301A1 (en) * | 2016-11-25 | 2018-05-31 | The Boeing Company | Epitaxial perovskite materials for optoelectronics |
| CN111533551B (zh) * | 2020-05-08 | 2022-07-08 | 中国科学院电工研究所 | 一种ybco超导薄膜及其制备方法 |
| CN111825444B (zh) * | 2020-08-04 | 2022-08-19 | 上海上创超导科技有限公司 | 在异位法高温超导薄膜中引入柱状缺陷的方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2822447B2 (ja) * | 1989-05-19 | 1998-11-11 | 住友電気工業株式会社 | 酸化物超電導線材の製造方法および装置 |
-
1990
- 1990-08-20 US US07/570,190 patent/US5124310A/en not_active Expired - Lifetime
-
1991
- 1991-08-20 EP EP91113927A patent/EP0472159B1/en not_active Expired - Lifetime
- 1991-08-20 DE DE69120610T patent/DE69120610T2/de not_active Expired - Fee Related
- 1991-08-20 AT AT91113927T patent/ATE140104T1/de not_active IP Right Cessation
- 1991-08-20 CA CA002049523A patent/CA2049523A1/en not_active Abandoned
- 1991-08-20 KR KR1019910014322A patent/KR920004148A/ko not_active Withdrawn
- 1991-08-20 JP JP3232205A patent/JPH04305016A/ja active Pending
- 1991-09-02 TW TW080106939A patent/TW218859B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW218859B (enExample) | 1994-01-11 |
| DE69120610T2 (de) | 1996-10-31 |
| CA2049523A1 (en) | 1992-02-21 |
| US5124310A (en) | 1992-06-23 |
| JPH04305016A (ja) | 1992-10-28 |
| EP0472159B1 (en) | 1996-07-03 |
| EP0472159A1 (en) | 1992-02-26 |
| DE69120610D1 (de) | 1996-08-08 |
| ATE140104T1 (de) | 1996-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19910820 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |