KR920000912Y1 - High voltage stabilization circuit - Google Patents
High voltage stabilization circuit Download PDFInfo
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- KR920000912Y1 KR920000912Y1 KR2019890005926U KR890005926U KR920000912Y1 KR 920000912 Y1 KR920000912 Y1 KR 920000912Y1 KR 2019890005926 U KR2019890005926 U KR 2019890005926U KR 890005926 U KR890005926 U KR 890005926U KR 920000912 Y1 KR920000912 Y1 KR 920000912Y1
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- beam current
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
- H04N3/18—Generation of supply voltages, in combination with electron beam deflecting
- H04N3/185—Maintaining dc voltage constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F38/00—Adaptations of transformers or inductances for specific applications or functions
- H01F38/42—Flyback transformers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
- H04N3/22—Circuits for controlling dimensions, shape or centering of picture on screen
- H04N3/23—Distortion correction, e.g. for pincushion distortion correction, S-correction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Details Of Television Scanning (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안에 따른 회로도.1 is a circuit diagram according to the present invention.
제2도는 본 고안에 따른 특성도.2 is a characteristic view according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
1 : 빔 전류 검출수단 2 : 스위칭회로1 beam current detecting means 2 switching circuit
3 : 공진용량가변회로 4 : 수평출력회로3: resonance capacitance variable circuit 4: horizontal output circuit
본 고안은 텔리텍스트(TTX) 텔레비젼 또는 대형 텔레비젼 브라운관의 고압 발생회로에 관한 것으로, 특히 텔레비젼의 화면 밝기에 따라 브라운관에 흐르는 빔 전류를 검출하여 고압을 일정하게 유지시켜 화면의 찌그러짐을 보정할 수 있는 텔레비젼 수상기에 있어서 고압 안정화회로에 관한 것이다.The present invention relates to a high-voltage generating circuit of a TTX television or a large-format television tube, and in particular, by detecting the beam current flowing through the tube according to the screen brightness of the television to maintain a high pressure to correct the distortion of the screen A high voltage stabilization circuit in a television receiver.
현재 칼라 텔레비젼이 대형화 및 고화질화로 진행되고 있다.At present, color televisions are progressing in size and quality.
이 과정에서 영상신호에 의해 화면의 밝기가 변하면 브라운관에 흐르는 빔 전류가 변화된다. 이때 고압이 변동되어 화면이 찌그러지는 현상이 발생된다. 이런 현상은 대형 텔레비젼에서 더욱 심하게 나타나므로 이러한 현상을 방지하기 위해 고압을 일정하게 유지할 필요가 있게 된다.In this process, when the brightness of the screen is changed by the video signal, the beam current flowing through the CRT is changed. At this time, the high pressure is changed and the screen is distorted. This phenomenon is more severe in large televisions, so it is necessary to keep the high pressure constant to prevent this phenomenon.
텔레비젼 수상기에 있어서 종래의 고압 발생회로로 작용되는 예가 공개번호 84-6481호로 1984년 12월3일자로 공개된 사실이 있다. 상기 84-6481호에 의하면 수평 귀손소거 기간중에 발생하는 플라이 백 펄스를 1차코일(15a)로 받는 플라이백 트랜스(15)와 영상신호의 휘도레벨에 따라 피이크 전압레벨이 변화하는 보정펄스 2차코일(15b, 15c)의 출력전압과 상기 보정펄스 전압과의 중첩전압을 고압출력으로 발생하도록 되어있다. 즉, 애노드 전압(고압)을 노드(18)에서 변화전압을 검출하여 전압 제어회로(19)에 의해서 보정펄스 전압을 만들어 플라이백 트랜스(FBT)의 2차측에 중첩시켜 고압을 발생시켜 왔었다. 그러나 방법은 입력 영상신호에 대해 고압의 제어가 불가능하며 화면의 찌그러짐 및 화질의 열화를 극복할 수 없었다.An example of acting as a conventional high voltage generating circuit in a television receiver is the fact disclosed on December 3, 1984 under Publication No. 84-6481. According to No. 84-6481, the correction pulse secondary in which the peak voltage level changes in accordance with the brightness level of the flyback transformer 15 and the image signal receiving the flyback pulse generated during the horizontal ear loss period as the primary coil 15a An overlapping voltage between the output voltages of the coils 15b and 15c and the correction pulse voltage is generated at a high voltage output. In other words, the anode voltage (high voltage) is detected at the node 18, and the voltage control circuit 19 generates a correction pulse voltage and superimposes on the secondary side of the flyback transformer FBT to generate a high voltage. However, the method cannot control the high pressure on the input video signal and cannot overcome the distortion of the screen and the deterioration of the image quality.
따라서 본 고안의 목적은 브라운관에 흐르는 빔 전류를 검출하여 고압을 일정하게 유지시켜 화면의 질을 향상시키고 화면의 찌그러짐을 보정할 수 있는 회로를 제공함에 있다.Accordingly, an object of the present invention is to provide a circuit that detects a beam current flowing through a CRT and maintains a high pressure to improve a screen quality and to correct a screen distortion.
이하 본 고안을 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 고안에 따른 회로도로서, 플라이백 트랜스(T1)의 2차측에서 저항 (R1)과 (R2)에 의해 빔전류를 검출하는 빔 전류검출수단(1)과, 상기 빔 전류 검출수단(1)의 출력단에 빔 전류에 스위칭되는 트랜지스터(Q2)의 베이스가 연결되고 상기 트랜지스터(Q2)의 에미터에 저항(Q3)을 연결함과 동시에 제너다이오드(D2)의 케소드측을 연결하고 상기 제너다이오드(D)의 에노드에 가변저항(R6)을 통해 트랜지스터(Q3)의 에미터를 연결하고, 상기 트랜지스터(Q3)의 베이스는 저항(R4)을 통해 전원단(B+)을 연결하며, 상기 트랜지스터(Q3)의 콜렉터에 저항(R5)과 제너다이오드 (D3)의 애노드는 트랜지스터(Q4)의 베이스가 연결된 스위칭회로(2)와, 상기 스위칭회로(2)의 트랜지스터(Q4)의 에미터단이 저항(R7, R8)에 의해 분압되어 트랜지스터 (Q5)의 구동으로 캐패시터(C2, C3)의 용량을 가변하는 공진용량 가변회로(3)와, 수평 편향코일(L1) 및 S보정용 콘덴서(C1)를 직결로 연결시켜 댐퍼다이오드(D1)와 병렬로 결합하고 수평 출력을 트랜지스터(Q1)를 연결한 수평 출력회로(4)로 구성된다.2 is a circuit diagram according to the present invention, the beam current detection means 1 for detecting the beam current by the resistors R1 and R2 at the secondary side of the flyback transformer T1, and the beam current detection means ( The base of the transistor Q2 switched to the beam current is connected to the output terminal of 1), the resistor Q3 is connected to the emitter of the transistor Q2, and the cathode side of the zener diode D2 is connected. The emitter of the transistor Q3 is connected to the anode of the zener diode D through the variable resistor R6, and the base of the transistor Q3 connects the power supply terminal B + through the resistor R4. The anode of the resistor R5 and the zener diode D3 is connected to the collector of the transistor Q3 and the emitter stage of the transistor Q4 of the switching circuit 2 and the base of the transistor Q4 are connected. The capacitances of the capacitors C2 and C3 are divided by the resistors R7 and R8 and driven by the transistor Q5. Variable resonant capacitance variable circuit (3), horizontal deflection coil (L1) and S correction capacitor (C1) directly connected in parallel with the damper diode (D1) and the horizontal output connected to the transistor (Q1) It consists of the output circuit 4.
제3도는 본 고안에 따른 특성도로서,31은 고압 안정회로 특성을 나타내며, 32는 일반회로 특성을 나타낸 비교예이다.3 is a characteristic diagram according to the present invention, 31 is a high-voltage stable circuit characteristics, 32 is a comparative example showing the general circuit characteristics.
따라서 본 고안의 구체적 일실시예를 제2,3도를 참조하여 상세히 설명하면, 본 고안은 텔레비젼과 모니터에서 화면의 내용에 따라 화면이 어둡고 밝기를 변화시키게 되는데, 상기 밝기 변화에 따라 브라운관에 흐르는 빔 전류가 변화된다. 상기 화면이 밝을때는 빔 전류가 많이 흘러 고압이 떨어지고, 화면이 어둡게 되면 빔전류가 적게흘러 고압이 올라가게 된다.Therefore, a specific embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3, and the present invention changes the brightness and brightness of the screen according to the contents of the screen in a television and a monitor. The beam current is changed. When the screen is bright, the beam current flows a lot to decrease the high pressure, and when the screen is dark, the beam current flows less and the high pressure rises.
따라서 고압에 의해 편향각이 변하여 고압이 높으면 편향각이 넓어져 화면폭이 늘어난다. 이러한 형상때문에 화면의 내용에 따라 화면의 찌그러짐 현상이 나타나게 된다. 이러한 문제점을 해결하기 위해서는 화면 내용에 관계없이 고압을 항상 일정하게 유지할 필요가 있다. 이를 해결하기위해 본 고안은 공진용량을 가변시켜 고압을 일정하게 유지시키고자 한다.Therefore, the deflection angle is changed by the high pressure. If the high pressure is high, the deflection angle is widened and the screen width is increased. Because of this shape, the screen is distorted depending on the contents of the screen. In order to solve this problem, it is necessary to keep the high pressure constant regardless of the screen content. In order to solve this problem, the present invention attempts to maintain a high pressure by varying the resonance capacitance.
상기 고압을 일정하게 유지시키기 위해서는 고압을 검출해야 하는데 상기 고압은 빔 전류로부터 검출하여 스위칭회로(2)에 의해 공진용량을 변화시켜 수평출력 트랜지스터(Q1)의 콜렉터 펄스(VCP)을 가변시켜 고압을 일정하게 유지시킬수 있다.In order to keep the high voltage constant, the high voltage should be detected. The high voltage is detected from the beam current, and the resonance capacitance is changed by the switching circuit 2 to change the collector pulse VCP of the horizontal output transistor Q1 to change the high voltage. Can be kept constant.
상기 수평 출력 트랜지스터(Q1)의 콜렉터 펄스 파고치(VCP)와 FBT(플라이백 트랜스)의 1차 단자전압(Eb)과의 관계식은 다음과 같다.The relationship between the collector pulse crest value VCP of the horizontal output transistor Q1 and the primary terminal voltage Eb of the FBT (flyback transformer) is as follows.
Tr : 귀선기간, Tb : 수평기간, Ts : 유효주사기간,: 플라이 백 트랜스 1차 인덕턴스, C : 공진 콘덴서 용량.Tr: return period, Tb: horizontal period, Ts: effective injection period, : Flyback transformer primary inductance, C: resonant capacitor capacity.
화면내용에 따라 브라운관에 흐르는 빔 전류를 저항(R1, R2)에 의해 전압으로 검출한다. 예를 들어 화면이 어두워지면 빔 전류가 적게흘러 트랜지스터(Q2)의 베이스전압이 올라가 트랜지스터(Q2)는 온된다. 상기 트랜지스터(Q2)가 온되면 제너다이오드(D2)와 가변저항(R6)을 거쳐 트랜지스터(Q3)의 에미터에 전압을 걸어주는데 그 전압이 올라갈때 트랜지스터(Q3)는 오프가 된다.According to the screen contents, the beam current flowing through the CRT is detected as a voltage by the resistors R1 and R2. For example, when the screen is dark, the base current of the transistor Q2 rises due to the low beam current, and the transistor Q2 is turned on. When the transistor Q2 is turned on, a voltage is applied to the emitter of the transistor Q3 through the zener diode D2 and the variable resistor R6. When the voltage rises, the transistor Q3 is turned off.
상기 트랜지스터(Q3)가 오프되면 트랜지스터(Q3)의 콜렉터 전압이 올라가므로 제너다이오드(D3)를 거쳐 연결된 트랜지스터(Q4)가 온된다.When the transistor Q3 is turned off, the collector voltage of the transistor Q3 goes up, so that the transistor Q4 connected through the zener diode D3 is turned on.
상기 트랜지스터(Q4)가 온되면 용량 가변회로(3)의 트랜지스터(Q5)의 베이스 전압이 올라가므로 트랜지스터(Q5)가 온된다. 트랜지스터(Q5)가 온되면 캐패시터 (C2) 및 (C3)의 한쪽 단자가 접지가 되어 캐패시터(C2)만의 용량이 가해진다. 상기 캐패시터(C2)만의 용량에 의해 수평 출력회로(4)의 공진 용량이 올라가게 되므로 FBT(T1) 1차측에 가하는 펄스크기를 줄여 주고 고압이 올라가는 것을 억제한다. 반대로 화면이 밝아지면 트랜지스터(Q2)가 오프되어 트랜지스터(Q)도 오프가된다. 상기 트랜지스터(Q5)가 오프되면 캐패시터(C2, C3)가 직렬로 구성되므로 수평출력회로(4)의 공진용량이 감소하게 된다. 상기 공전용량이 감소하면 고압이 올라가므로 고압이 떨어지는 것이 억제된다.When the transistor Q4 is turned on, the transistor Q5 is turned on because the base voltage of the transistor Q5 of the capacitor variable circuit 3 rises. When the transistor Q5 is turned on, one terminal of the capacitors C2 and C3 is grounded, and the capacitance of only the capacitor C2 is applied. Since the resonance capacity of the horizontal output circuit 4 is increased by the capacitor C2 alone, the pulse size applied to the primary side of the FBT T1 is reduced and the high voltage is suppressed from rising. On the contrary, when the screen becomes bright, the transistor Q2 is turned off and the transistor Q is turned off. When the transistor Q5 is turned off, the capacitors C2 and C3 are configured in series, thereby reducing the resonance capacitance of the horizontal output circuit 4. When the idle amount decreases, the high pressure rises, so that the drop of the high pressure is suppressed.
이상과 같이 고압의 변화를 빔 전류 검출회로(1)에 의해 빔 전류로 검출하여 수평 출력 회로(4)의 공진 용량을 가변 하므로서 제3도의 안정화 회로특성(31)처럼 고압을 안정시킨다.As described above, the high current is stabilized as in the stabilization circuit characteristic 31 of FIG. 3 by varying the resonance capacity of the horizontal output circuit 4 by detecting the change in the high voltage as the beam current by the beam current detection circuit 1.
상술한 바와같이 브라운관에 흐르는 빔 전류를 검출하여 고압을 일정하게 유지시켜 화면의 찌그러짐 및 화면의 질을 향상시키는 이점이 있다.As described above, the beam current flowing through the CRT is detected to maintain a high pressure, thereby improving screen distortion and screen quality.
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KR2019890005926U KR920000912Y1 (en) | 1989-05-06 | 1989-05-06 | High voltage stabilization circuit |
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KR2019890005926U KR920000912Y1 (en) | 1989-05-06 | 1989-05-06 | High voltage stabilization circuit |
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KR900021359U KR900021359U (en) | 1990-12-15 |
KR920000912Y1 true KR920000912Y1 (en) | 1992-01-31 |
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KR2019890005926U KR920000912Y1 (en) | 1989-05-06 | 1989-05-06 | High voltage stabilization circuit |
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