KR910019190A - Lead frame and manufacturing method - Google Patents

Lead frame and manufacturing method Download PDF

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Publication number
KR910019190A
KR910019190A KR1019910002802A KR910002802A KR910019190A KR 910019190 A KR910019190 A KR 910019190A KR 1019910002802 A KR1019910002802 A KR 1019910002802A KR 910002802 A KR910002802 A KR 910002802A KR 910019190 A KR910019190 A KR 910019190A
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KR
South Korea
Prior art keywords
lead frame
oxide film
copper oxide
copper
whose
Prior art date
Application number
KR1019910002802A
Other languages
Korean (ko)
Other versions
KR940007384B1 (en
Inventor
요시아끼 오가와
히로유끼 노구찌
Original Assignee
시기 모리야
미쓰비시뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR910019190A publication Critical patent/KR910019190A/en
Application granted granted Critical
Publication of KR940007384B1 publication Critical patent/KR940007384B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

리드프레임 및 그 제조방법.Lead frame and manufacturing method thereof.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 이 발명의 한 실시예에 의한 리드프레임의 평면도, 제 2 도는 (a)는 제 1 도의 A-A단면도, (b)는 B-B단면도.1 is a plan view of a lead frame according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line A-A of FIG. 1, and (b) is a cross-sectional view taken along the line B-B.

Claims (2)

반도체장치의 수지봉하여 막는형 패키지에 사용되는 리드프레임에 있어서, 리드프레임의 적어도 몰드수지로 봉하여 막게되는 부분의 표면의 일부에 동의 산화피막을 가지고 있고, 또한 상기 동의 산화피막의 주요한 구조가 틈새를 가지는 침상결정의 집합체로 이루어지는 것을 특징으로 하는 리드프레임.In a lead frame used in a resin-sealed package of a semiconductor device, at least part of the surface of the lead frame to be sealed by a mold resin has a copper oxide film, and the main structure of the copper oxide film A lead frame comprising an aggregate of needle crystals having a gap. 동 또는 동합금으로 이루어지는 리드프레임을 양극으로 하고, 알카리금속의 수산화물, 알칼리토류금속의 수산화물, 또는 그것들의 혼합물을 주성분으로 하는 알카리용액 중에서, 0.2A/dm2∼1.5A/dm2의 양극전류밀도로, 전해를 행하여 양극산화하는 것에 의하여, 상기 리드프레임표면에 틈새를 가지는 침상결정의 집합체를 주요한 구조로 하는 동의 산화피막을 형성하는 것을 특징으로 하는 리드프레임의 제조방법.An anode current density of 0.2 A / dm 2 to 1.5 A / dm 2 in an alkaline solution whose lead frame is made of copper or copper alloy as an anode and whose hydroxide is an alkali metal hydroxide, an alkali earth metal hydroxide, or a mixture thereof. And anodizing to form a copper oxide film whose main structure is an aggregate of acicular crystals having a gap on the lead frame surface. ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910002802A 1990-04-13 1991-02-21 Leadframe and manufacturing method thereof KR940007384B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-98072 1990-04-13
JP2098072A JPH03295262A (en) 1990-04-13 1990-04-13 Lead frame and manufacture thereof

Publications (2)

Publication Number Publication Date
KR910019190A true KR910019190A (en) 1991-11-30
KR940007384B1 KR940007384B1 (en) 1994-08-16

Family

ID=14210145

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002802A KR940007384B1 (en) 1990-04-13 1991-02-21 Leadframe and manufacturing method thereof

Country Status (2)

Country Link
JP (1) JPH03295262A (en)
KR (1) KR940007384B1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3883543B2 (en) 2003-04-16 2007-02-21 新光電気工業株式会社 Conductor substrate and semiconductor device
JP4740773B2 (en) * 2003-04-16 2011-08-03 新光電気工業株式会社 Lead frame, semiconductor device, and lead frame manufacturing method
JP3841768B2 (en) * 2003-05-22 2006-11-01 新光電気工業株式会社 Package parts and semiconductor packages
JP6653139B2 (en) * 2015-07-24 2020-02-26 株式会社三井ハイテック Lead frame and manufacturing method thereof
JP6577373B2 (en) * 2016-01-18 2019-09-18 新光電気工業株式会社 Lead frame, manufacturing method thereof, and semiconductor device
JP6905031B2 (en) * 2016-02-17 2021-07-21 株式会社三井ハイテック Lead frame and semiconductor package
JP6621681B2 (en) * 2016-02-17 2019-12-18 株式会社三井ハイテック Lead frame, manufacturing method thereof, and semiconductor package
JP6850202B2 (en) * 2017-06-02 2021-03-31 株式会社三井ハイテック Lead frame, lead frame manufacturing method and semiconductor device manufacturing method
JP7083198B1 (en) * 2021-06-18 2022-06-10 ドングァン ディーエスピー テクノロジー カンパニー リミテッド Copper surface treatment method for polymer and copper conjugates

Also Published As

Publication number Publication date
JPH03295262A (en) 1991-12-26
KR940007384B1 (en) 1994-08-16

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