KR910010743A - Resistor built-in diode - Google Patents

Resistor built-in diode Download PDF

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Publication number
KR910010743A
KR910010743A KR1019890015998A KR890015998A KR910010743A KR 910010743 A KR910010743 A KR 910010743A KR 1019890015998 A KR1019890015998 A KR 1019890015998A KR 890015998 A KR890015998 A KR 890015998A KR 910010743 A KR910010743 A KR 910010743A
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South Korea
Prior art keywords
type
concentration
layer
type impurity
phase growth
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KR1019890015998A
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Korean (ko)
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KR920007795B1 (en
Inventor
최순주
박영환
김창만
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곽정소
한국전자 주식회사
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Priority to KR1019890015998A priority Critical patent/KR920007795B1/en
Publication of KR910010743A publication Critical patent/KR910010743A/en
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Publication of KR920007795B1 publication Critical patent/KR920007795B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

저항 내장형 다이오드Resistor built-in diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 저항 내장형 다이오드의 제작공정을 보인 단면도.2 is a cross-sectional view showing a manufacturing process of a resistor-embedded diode of the present invention.

제3도는 본 발명의 저항 내장형 다이오드의 조립상태를 보인 예시도.3 is an exemplary view showing an assembled state of a resistor-embedded diode of the present invention.

Claims (4)

고농도 N형 기판(1)에 저농도 N형 기상성장층(2)을 형성하고, 상기 저농도 N형 기상성장층(2)에 P형 불순물층(4)을 형성하여 다이오드를 형성함과 아울러 상기 저농도 N형 기상성장층(2)에 고농도 N형 불순물층(6)을 형성하고, 열규소산화막(5)의 개재하에 상기 고농도 N형 불순물층(6)과 연결되게 다결정규소막(7)을 형성한 후 그 다결정규소막(7) 에 적절한 저항값에 따라 P형 또는 N형 불순물을 확산하여 저항체를 형성하며, 저온규소산화막(8)의 개재하에 상기 P형 불순물층(4) 및 상기 다결정규소막(7)에 각기 연결되는 알루미늄층(9)을 형성하고, 그 위에 패시베이션막인 저온규소산화막(10)을 형성하여 구성된 것을 특징으로 하는 저항 내장형 다이오드.A low concentration N-type gas phase growth layer 2 is formed on the high concentration N-type substrate 1, and a P-type impurity layer 4 is formed on the low concentration N-type gas phase growth layer 2 to form a diode. A high concentration N-type impurity layer 6 is formed in the N-type gas phase growth layer 2, and a polysilicon film 7 is formed to be connected to the high concentration N-type impurity layer 6 through the thermal silicon oxide film 5. Thereafter, a P-type or N-type impurity is diffused into the polycrystalline silicon film 7 to form a resistor, and the P-type impurity layer 4 and the polycrystalline silicon are interposed between the low-temperature silicon oxide film 8. A resistance-embedded diode comprising: an aluminum layer (9) connected to each of the films (7), and a low temperature silicon oxide film (10) formed thereon as a passivation film. 제1항에 있어서, 상기 저농도 N형 기상성장층(2)에 P형 불순물을 요구되는 저항체의 형상으로 직접도포확산하여 저항체를 형성하고, 상기 저농도 N형 기상성장층(2)에 고농도 N형 불순물층(6)을 형성하여 구성된 것임을 특징으로 하는 저항 내장형 다이오드.2. The low concentration N-type gas phase growth layer 2 is formed by applying and diffusing a P-type impurity in the shape of a resistor required to form a resistor. A diode with a resistance, characterized in that formed by forming an impurity layer (6). 제1항에 있어서, 고농도 N형 기판(1) 및 저농도 N형 기상성장층(2), P형 불순물층(4), 고농도 N형 불순물층(6)을 고농도 P형 기판 및 제농도 P형 기상성장층, N형 불순물층, 고농도 P형 불순물층으로 각기 형성하여 구성된 것임을 특징으로 하는 저항 내장형 다이오드.The high-concentration N-type substrate 1 and the low-concentration N-type gas phase growth layer 2, the P-type impurity layer 4, and the high-concentration N-type impurity layer 6 are formed of a high-concentration P-type substrate and a non-concentration P-type. A resistance-embedded diode, which is formed by forming a vapor phase growth layer, an N-type impurity layer, and a high concentration P-type impurity layer, respectively. 제3항에 있어서, 상기 저농도 P형 기상성장층에 N형 불순물을 요구되는 저항체의 형성으로 직접도포확산하여 저항체를 형성하고, 상기 저농도 P형 기상성장층에 고농도 P형 불순물층을 형성하여 구성된 것임을 특징르로 하는 저항 내장형 다이오드.4. The method of claim 3, wherein the resistor is formed by directly spreading and diffusing N-type impurities in the low concentration P-type gas phase growth layer to form a resistor, and the high concentration P-type impurity layer is formed in the low concentration P-type gas phase growth layer. A diode with a built-in resistor, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890015998A 1989-11-04 1989-11-04 Diode with resistor KR920007795B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890015998A KR920007795B1 (en) 1989-11-04 1989-11-04 Diode with resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890015998A KR920007795B1 (en) 1989-11-04 1989-11-04 Diode with resistor

Publications (2)

Publication Number Publication Date
KR910010743A true KR910010743A (en) 1991-06-29
KR920007795B1 KR920007795B1 (en) 1992-09-17

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Application Number Title Priority Date Filing Date
KR1019890015998A KR920007795B1 (en) 1989-11-04 1989-11-04 Diode with resistor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101026061B1 (en) * 2009-04-13 2011-04-04 엘에스엠트론 주식회사 Conductor having resistance layer, fabrication method thereof and printed circuit board including the same

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KR920007795B1 (en) 1992-09-17

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