KR910003766A - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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Publication number
KR910003766A
KR910003766A KR1019900011376A KR900011376A KR910003766A KR 910003766 A KR910003766 A KR 910003766A KR 1019900011376 A KR1019900011376 A KR 1019900011376A KR 900011376 A KR900011376 A KR 900011376A KR 910003766 A KR910003766 A KR 910003766A
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South Korea
Prior art keywords
plasma processing
processing apparatus
voltage
plasma
cooling
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KR1019900011376A
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Korean (ko)
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고우지 니시하따
시게가즈 가또오
아쯔시 이또오
쯔네히꼬 쯔보네
나오유끼 다무라
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미다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Publication of KR910003766A publication Critical patent/KR910003766A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음.No content.

Description

플라즈마 처리장치Plasma processing equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예인 플라즈마 처리장치를 나타낸 종단면도.1 is a longitudinal sectional view showing a plasma processing apparatus according to an embodiment of the present invention.

제2도는 제1도의 시료대부의 부분 상세도.FIG. 2 is a partial detail view of the sample bag of FIG.

Claims (18)

플라즈마를 생성하는 생성수단과, 상기 플라즈마에 의하여 처리되는 시료를 그 자시이 유지 하거나 또는 유지하는 부재를 가짐과 동시에 바이어스 전압이 발생하는 전압이 인가되는 부재와, 상기 전압이 인가되는 부재를 냉각하는 냉각부재로 이루어지고, 상기 냉각부재와 상기 전압이 인가되는 부재와의 사이에 전기 절연재를 설치한 플라즈마 처리장치.Cooling means for cooling a member to which a voltage to which a bias voltage is applied, and a member to which a voltage is generated, having a generating means for generating a plasma, a member to hold or hold a sample processed by the plasma at its own time; And a electrical insulation material between the cooling member and the member to which the voltage is applied. 플라즈마를 생성하는 생성수단과, 상기 플라즈마에 의하여 처리되는 시료를 그 자신이 유지 하거나 또는 유지하는 주재를 가짐과 동시에 바이어스 전압을 발생하는 전압이 인가되는 부재와, 상기 전압이 인가되는 부재를 냉각하는 냉각부재로 이루어진고, 상기 냉각부재와 상기 전압이 인가되는 부재와의 사이에 전기 절연재를 설치하고, 상기 전기절연재를 전열재를 거쳐 상기 냉각 부재 및 상기 전압이 인가되는 부재에 밀착시켜져 이루어진 플라즈마 처리 장치.Cooling means having a generating means for generating a plasma, a main body which holds or maintains a sample processed by the plasma, and at which a voltage for generating a bias voltage is applied, and a member to which the voltage is applied; It is made of a cooling member, the electrical insulating material is provided between the cooling member and the member to which the voltage is applied, and the electrical insulating material is brought into close contact with the cooling member and the member to which the voltage is applied via a heat transfer material. Processing unit. 제1항 및 2항에 있어서, 상기 플라즈마의 생성수단은 마이크로파의 전계와 솔레노이드코일의 자계에 의한 플라즈마 처리장치.The plasma processing apparatus according to claim 1 or 2, wherein the plasma generating means comprises an electric field of microwaves and a magnetic field of solenoid coil. 제1항 및 제2항에 있어서, 상기 플라즈마의 생성수단은 평행평판간에 인가되는 고주파 전력에 의한 플라즈마처리장치.The plasma processing apparatus according to claim 1 or 2, wherein the plasma generating means is applied between parallel plates. 제1항 및 2항에 있어서, 상기 냉각부재는 저온냉매를 액체 저류하여 이루어진 냉각용기인 플라즈마 처리장치.The plasma processing apparatus of claim 1, wherein the cooling member is a cooling vessel formed by storing a low temperature refrigerant in a liquid. 제1항 및 2항에 있어서, 상기 냉각부재는 저온냉매를 순환시켜 이루어진 냉각대인 플라즈마 처리장치.The plasma processing apparatus of claim 1, wherein the cooling member is a cooling zone formed by circulating a low temperature refrigerant. 제1항 및 2항에 있어서, 상기 전압이 인가되는 부재는 고주파 전원이 접속되는 플라즈마 처리장치.The plasma processing apparatus of claim 1 or 2, wherein the member to which the voltage is applied is connected to a high frequency power source. 제1항 및 2항에 있어서, 상기 시료를 유지하는 부재는 정전흡착장치인 플라즈마 처리장치.The plasma processing apparatus according to claim 1 or 2, wherein the member for holding the sample is an electrostatic adsorption apparatus. 제1항 및 2항에 있어서, 상기 전기 절연재는 전열성이 양호한 재료로 이루어진 플라즈마 처리장치.The plasma processing apparatus according to claim 1 or 2, wherein the electrical insulation material is made of a material having good heat conductivity. 제1항 및 2항에 있어서, 상기 전기전연재층은 세라믹, 보론나이트라이드로 이루어진 플라즈마 처리장치.The plasma processing apparatus of claim 1, wherein the electrical insulation material layer is made of ceramic or boron nitride. 제2항에 있어서, 상기 전열재는 연질재로 이루어지고, 가압하여 밀착시크는 플라즈마 처리 장치.The plasma processing apparatus of claim 2, wherein the heat transfer material is made of a soft material, and pressurized and tightly contacted. 제11항에 있어서, 상기 전열재는 가열하여 가압하는 플라즈마 처리장치.The plasma processing apparatus of claim 11, wherein the heat transfer material is heated and pressurized. 제11항에 있어서, 상기 전열재는 인듐, 납, 아연, 땜납, 납재로 이루어진 플라즈마 처리장치.The plasma processing apparatus of claim 11, wherein the heat transfer material is made of indium, lead, zinc, solder, and lead. 제2항에 있어서, 상기 전열재는 용융하여 상기 냉각부재와 상기 전기절연재에 그리고 상기 전기절연재와 상기 전압이 인가되는 부재에 밀착시키는 플라즈마 처리장치.3. The plasma processing apparatus of claim 2, wherein the heat transfer material is melted to closely adhere to the cooling member and the electric insulation material and to a member to which the electric insulation material and the voltage are applied. 제2항에 있어서, 상기 전기 절열재층은 메탈라이즈하여, 상기 절연재를 브레이징처리하고, 상기 냉각부재와 상기 전기 절연재를 그리고 상기 전기 절연재와 상기 전압이 인가되는 부재를 일체로 형성하여 이루어진 플라즈마 처리장치.The plasma treatment of claim 2, wherein the electrical insulation material layer is metallized to braze the insulation material, the cooling member and the electrical insulation material, and the electrical insulation material and the member to which the voltage is applied are integrally formed. Device. 전기 전연재를 거쳐 정전 흡착용의 전극이 설치된 시료대를 냉각하고, 그 시료대에 시료를 정전 흡착 유지하여 처리실내에서 플라즈마 처리하는 플라즈마처리장치에 있어서, 상기 절연재와 상기 시료대와의 사이를 전열재를 거쳐 밀착시킨 플라즈마 처리장치.A plasma processing apparatus for cooling a sample stage provided with an electrode for electrostatic adsorption through an electrical insulation material, and electrostatic adsorption holding of the sample on the sample stage to perform plasma processing in a processing chamber. Plasma treatment device in close contact with the heat transfer material. 제16항에 있어서, 상기 정전흡착용의 전극은 상기 시료대에 2전극을 설치하여 이루어진 플라즈마 처리 장치.17. The plasma processing apparatus of claim 16, wherein the electrode for electrostatic absorption is provided by providing two electrodes on the sample stage. 제16항에 있어서, 상기 정전흡착용의 전극은 상기 시료대에 1전극을 설치하여 이루어진 플라즈마 처리장치.17. The plasma processing apparatus of claim 16, wherein the electrode for electrostatic absorption is provided by providing one electrode on the sample stage. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900011376A 1989-07-26 1990-07-26 Plasma processing equipment KR910003766A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19147489 1989-07-26
JP89-191474 1989-07-26

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KR910003766A true KR910003766A (en) 1991-02-28

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JP4996184B2 (en) * 2006-09-19 2012-08-08 東京エレクトロン株式会社 Wafer temperature control apparatus and wafer temperature control method

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