KR910003440A - Mask pattern formation method with improved development selectivity by photoresist developer - Google Patents

Mask pattern formation method with improved development selectivity by photoresist developer Download PDF

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Publication number
KR910003440A
KR910003440A KR1019890009361A KR890009361A KR910003440A KR 910003440 A KR910003440 A KR 910003440A KR 1019890009361 A KR1019890009361 A KR 1019890009361A KR 890009361 A KR890009361 A KR 890009361A KR 910003440 A KR910003440 A KR 910003440A
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South Korea
Prior art keywords
photoresist
mask pattern
developer
improved
development selectivity
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KR1019890009361A
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Korean (ko)
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KR910006543B1 (en
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문승찬
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정몽헌
현대전자산업 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음.No content.

Description

포토레지스트 현상액처리에 의한 현상선택비를 개선한 마스크패턴 형성방법Mask pattern formation method with improved development selectivity by photoresist developer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명에 의해 포토레지스트 패턴을 형성하는 단계를 나타낸 단면도,2A to 2D are cross-sectional views showing a step of forming a photoresist pattern according to the present invention;

제3도는 알칼리 용액에 대하여 불용성인 감광제에 자외선을 조사하여 케텐을 거쳐 용해성인 카아복실 산으로 변환되는 분자구조식,3 is a molecular structural formula that is converted to a soluble carboxylic acid through ketene by irradiating ultraviolet light to a photosensitive agent insoluble in alkaline solution,

제4도는 감광제의 퀴논 디아지드 그룹과 노보락 수지의 특정위치와 반응하여 아조-콤파운드를 형성하는 분자구조식.4 is a molecular structure of reacting with a specific position of a quinone diazide group of a photosensitizer and a novolak resin to form an azo-compound.

Claims (3)

포토레지스트를 기판 상부에 도포하고 소프트굽기 공정을 실시한 다음, 마스크 패턴을 형성하기 위하여 포토레지스트에 자외선을 노광시키고, 굽기 및 현상 공정을 순차적으로 거쳐서 포토레지스트에 의한 마스크 패턴 형성방법에 있어서, 상기 기판상에 도포된 포토레지스트를 알칼리 성분의 현상액에서 처리하고, 소프트굽기 공정에 의해 상기 현상처리된 포토레지스트에 알칼리 성분에 대한 불용해충인 아조 콤파운드를 수 100Å 정도 형성한다음, 포토레지스트에 자외선을 노광시키고 굽기 및 현상공정에 의해 이루어지는 것을 특징으로 하는 포토레지스트 현상액 처리에 의한 현상선택비를 개선한 마스크 패턴 형성방법.In the method of forming a mask pattern using a photoresist, the photoresist is coated on the substrate and subjected to a soft baking process, followed by exposing ultraviolet rays to the photoresist to form a mask pattern, and sequentially performing a baking and developing process. The photoresist coated on the substrate is treated with an alkali developer, and a soft baking process forms azo compound, which is an insoluble compound for the alkaline component, for several hundred microseconds, and then exposes the ultraviolet light to the photoresist. The mask pattern forming method which improved the development selectivity by the photoresist developing solution process characterized by the above-mentioned. 제1항에 있어서, 상기 알칼리 성분의 현상액에서의 포토레지스트의 처리는 MIB(Metal Ion Base) 또는 MIF(Metal Ion Free) 현상액에서 30-60초 정도 담근후 인출하는 것을 특징으로 하는 포토레지스트 현상액 처리에 의한 현상선택비를 개선한 마스크 패턴 형성방법.2. The photoresist developer treatment according to claim 1, wherein the photoresist treatment in the alkaline developer is immersed for 30 to 60 seconds in a metal ion base (MIB) or metal ion free (MIF) developer and then withdrawn. The mask pattern forming method which improved the development selectivity by. 제1항에 있어서, 상기의 아조-콤파운드의 형성은 감광제의 퀴논 다이아지드 그룹(Quinone Diazide Group)와 노보락 수지(Novolac Resin)의 아조 결합(Azo Coupling)에 의해 형성된 것을 특징으로 하는 포토레지스트 현상액 처리에 의한 현상선택비를 개선한 마스크 패턴 형성방법.The photoresist developer according to claim 1, wherein the azo-compound is formed by Azo Coupling of a quinone diazide group and a novolac resin. Mask pattern formation method which improved the development selectivity by a process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890009361A 1989-07-01 1989-07-01 Process for forming mask pattern KR910006543B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890009361A KR910006543B1 (en) 1989-07-01 1989-07-01 Process for forming mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890009361A KR910006543B1 (en) 1989-07-01 1989-07-01 Process for forming mask pattern

Publications (2)

Publication Number Publication Date
KR910003440A true KR910003440A (en) 1991-02-27
KR910006543B1 KR910006543B1 (en) 1991-08-27

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Application Number Title Priority Date Filing Date
KR1019890009361A KR910006543B1 (en) 1989-07-01 1989-07-01 Process for forming mask pattern

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KR910006543B1 (en) 1991-08-27

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