JPH04174850A - Developing solution for positive type photo regist - Google Patents
Developing solution for positive type photo registInfo
- Publication number
- JPH04174850A JPH04174850A JP30102090A JP30102090A JPH04174850A JP H04174850 A JPH04174850 A JP H04174850A JP 30102090 A JP30102090 A JP 30102090A JP 30102090 A JP30102090 A JP 30102090A JP H04174850 A JPH04174850 A JP H04174850A
- Authority
- JP
- Japan
- Prior art keywords
- developing solution
- developing
- regist
- active agent
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000007864 aqueous solution Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- -1 sulfuric acid ester salt Chemical class 0.000 claims description 9
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 150000008054 sulfonate salts Chemical class 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 6
- 239000011734 sodium Substances 0.000 abstract description 6
- 229910052708 sodium Inorganic materials 0.000 abstract description 6
- 239000003513 alkali Substances 0.000 abstract description 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 abstract description 4
- 239000013543 active substance Substances 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract 1
- 150000001450 anions Chemical class 0.000 abstract 1
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- GDSSTYXBZTUGSJ-UHFFFAOYSA-N 2-[2-[2-(2-nonylphenoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCOCCOCCO GDSSTYXBZTUGSJ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical class OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- ZIWRUEGECALFST-UHFFFAOYSA-M sodium 4-(4-dodecoxysulfonylphenoxy)benzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCOS(=O)(=O)c1ccc(Oc2ccc(cc2)S([O-])(=O)=O)cc1 ZIWRUEGECALFST-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は、水酸化アルカリ水溶液からなるポジ型フォト
レジスト用現像液に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a positive photoresist developer comprising an aqueous alkali hydroxide solution.
プリント回路基板等のパターン製作にはフォトリソグラ
フィ技術が用いられ、このためのフォトレジストとして
は、ネガ型とポジ型があるが、最近は、解像度の面で優
れていることがらポジ型が主流になってきている。Photolithography technology is used to create patterns for printed circuit boards, etc., and there are two types of photoresists: negative and positive types.Recently, positive types have become mainstream due to their superior resolution. It has become to.
このポジ型フォトレジストは、一般に水酸化ナトリウム
等のアルカリ水溶液に、これに可溶なノボラック樹脂と
ナフトキノンジアジド系感光剤を加えたものが用いられ
、この感光剤が紫外線の照射を受けてアルカリ水溶液に
可溶となる反応を利用し、次いで、この感光剤を現像液
で処理してパターン形成が行なわれる。This positive photoresist is generally made by adding a soluble novolac resin and a naphthoquinone diazide photosensitizer to an alkaline aqueous solution such as sodium hydroxide. The photosensitive agent is then treated with a developer to form a pattern.
このポジ型フォトレジスト用の現像液の代表的なものと
して、有機アルカリ化合物（水酸化テトラメチルアンモ
ニウム等）が用いられているが、この現像液は解像度や
寸法精度の低下、歩留の低下等の問題があった。これを
解決する”手段として、この現像液にメタノール、エタ
ノール等の有機溶剤或いは界面活性剤を添加する方法が
提案されている（特開昭５８−５７１２８号公報）、。An organic alkali compound (tetramethylammonium hydroxide, etc.) is typically used as a developer for this positive photoresist, but this developer may cause a decrease in resolution, dimensional accuracy, and yield. There was a problem. As a means to solve this problem, a method has been proposed in which an organic solvent such as methanol or ethanol or a surfactant is added to the developer (Japanese Patent Application Laid-open No. 57128/1983).
一方、より安価な現像液として、アルカリ金属水酸化物
の水溶液が使用されている。このアルカリ金属水酸化物
からなる現像液は、露光部の溶解速度が遅く、現像効率
が悪いという問題があった。On the other hand, an aqueous solution of an alkali metal hydroxide is used as a cheaper developer. This developing solution made of alkali metal hydroxide has a problem in that the rate of dissolution of exposed areas is slow and development efficiency is poor.
［発明が解決しようとする課題］
本発明は、上記問題点を解決すべくなされたものであり
、本発明の目的は、ポジ型レジストの露光部の溶解速度
を早め、現像効率を高めることができる現像液を提供す
ることにある。[Problems to be Solved by the Invention] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to accelerate the dissolution rate of the exposed area of a positive resist and improve the development efficiency. Our goal is to provide a developing solution that can
［課題を解決するための手段］
本発明者は、上記課題を達成するために鋭意、研究を進
めた結果、アルカリ金属水酸化物水溶液からなる現像液
に、特定の界面活性剤を添加することにより、前記アル
カリ金属水酸化物水溶液のみからなる現像液に比べて、
レジスト露光部の溶解速度力τ著しく増加し、現像後の
残膜がなく、現像工程を連続して行なうプリント回路基
板あるいはテープキャリア等の製造においてポジ型フォ
トレジストを使用する場合、極めて有効であることを見
出した。[Means for Solving the Problems] As a result of intensive research to achieve the above-mentioned problems, the present inventor has discovered that a specific surfactant can be added to a developer consisting of an aqueous alkali metal hydroxide solution. Therefore, compared to the developer consisting only of the alkali metal hydroxide aqueous solution,
The dissolution rate τ of the exposed areas of the resist increases significantly, and there is no residual film after development, making it extremely effective when using positive photoresists in the production of printed circuit boards or tape carriers, etc., where the development process is performed continuously. I discovered that.
本発明は、かかる知見に基づきなされたもので、本発明
のポジ型フォトレジスト用現像液は、アルカリ金属水酸
化物の水溶液にスルホン酸塩及び又は硫酸エステル塩の
アニオン界面活性剤を含有させることからなるものであ
る。The present invention has been made based on this knowledge, and the positive photoresist developer of the present invention includes an aqueous solution of an alkali metal hydroxide containing an anionic surfactant such as a sulfonate and/or a sulfate ester salt. It consists of
本発明の現像液に用いられるアルカリ金属水酸化物とし
ては、水酸化ナトリウム、水酸化カリウムが好適に用い
られ、この化合物の水溶液濃度は、１〜５％が好ましい
。この濃度が１％未満であれば、現像速度が遅く、また
５％以上とすると非露光部のレジストが溶解されるよう
になり好ましくない。As the alkali metal hydroxide used in the developer of the present invention, sodium hydroxide and potassium hydroxide are preferably used, and the aqueous solution concentration of this compound is preferably 1 to 5%. If this concentration is less than 1%, the development speed will be slow, and if it is more than 5%, the resist in non-exposed areas will be dissolved, which is not preferable.
本発明の現像液に添加されるスルホン酸塩界面活性剤と
しては、アルキルスルホン酸、アルキルベンゼン及びア
ルキルナフタレンフルホン酸、スルホコハク酸、α−オ
レフィンスルホン酸、Ｎ−アシルスルホン酸、アルキル
アリルエーテルスルホン酸等のナトリウム、アンモニウ
ム、カリウム等のアルカリ金属との塩、また硫酸エステ
ル塩アニオン界面活性剤としては、アルキル硫酸エステ
ル、アルキルエーテル硫酸エステル、アルキルアリルエ
ーテル硫酸エステル、アルキルアミド硫酸、硫酸化油等
のナトリウム、アンモニウム、カリウム等のアルカリ金
属との塩等のいずれも、特に支障なく用いることができ
る。Sulfonate surfactants added to the developer of the present invention include alkylsulfonic acids, alkylbenzene and alkylnaphthalene sulfonic acids, sulfosuccinic acids, α-olefin sulfonic acids, N-acylsulfonic acids, and alkylaryl ether sulfonic acids. Salts with alkali metals such as sodium, ammonium, and potassium, and sulfate ester salts as anionic surfactants include alkyl sulfates, alkyl ether sulfates, alkyl allyl ether sulfates, alkylamides sulfates, sulfated oils, etc. Any salts with alkali metals such as sodium, ammonium, potassium, etc. can be used without particular problem.
この界面活性剤のうちでも、特には、アルキルジフェニ
ルエーテルジスルホン酸ナトリウム、アルキルナフタレ
ンスルホン酸ナトリウム、或いはポリオキシエチレンア
ルキルフェニルエーテル硫酸ナトリウム、ポリオキシエ
チレンアルキルエーテル硫酸ナトリウム等が好ましい。Among these surfactants, sodium alkyldiphenyl ether disulfonate, sodium alkylnaphthalene sulfonate, sodium polyoxyethylene alkylphenyl ether sulfate, sodium polyoxyethylene alkyl ether sulfate, etc. are particularly preferred.
これらの界面活性剤は、現像液に対し、ｏ、。These surfactants are o.
１〜１０ｗｔ％添加することが好ましい。０．０１ｗｔ
％以下の濃度では、界面活性剤が添加された効果が認め
られず、また１０ｗｔ％以上では、添加量の増加の割に
は、゛効果の向上が期待できないため、１０ｗｔ％以下
とすることが好ましい。It is preferable to add 1 to 10 wt%. 0.01wt
% or less, the effect of adding the surfactant is not recognized, and if it is 10 wt % or more, no improvement in the effect can be expected in spite of the increase in the amount added, so it is recommended to keep it at 10 wt % or less. preferable.
本発明の現像液は、従来の現像液とほとんど同じ条件、
方法で使用でき、２０〜３０℃の液温で、−浸漬、パド
ル、スプレー等の現像法が好適に採用される。The developer of the present invention can be used under almost the same conditions as conventional developers.
Development methods such as dipping, puddle, and spraying at a liquid temperature of 20 to 30° C. are preferably employed.
以下に、本発明を実施例について説明するが、本発明は
これらによって限定されるものではない。EXAMPLES The present invention will be described below with reference to Examples, but the present invention is not limited thereto.
（実施例１）
５．５ｃｍ平方の銅張ガラスエポキシ積層板上に、クレ
ゾールノボラック樹脂２５％、０−ナフトキノンジアジ
ドフェニルスルホネート１０％、ジエチレングリコール
モノブチルエーテルアセテート６５％の混合物をスピン
コーターを用い、２０Ｏｒｐｍ、２分間塗布し、８０℃
、３０分間乾燥した。このとき膜厚は４．４μｍであっ
た。(Example 1) A mixture of 25% cresol novolac resin, 10% 0-naphthoquinone diazidophenyl sulfonate, and 65% diethylene glycol monobutyl ether acetate was applied onto a 5.5 cm square copper-clad glass epoxy laminate using a spin coater at 20 rpm. Apply for 2 minutes and heat to 80℃
, dried for 30 minutes. At this time, the film thickness was 4.4 μm.
本積層板にラインアンドスペース５０μｍのくし型ポジ
パターン（＜シ本数１１）をのせ、超高圧水銀灯（５０
００ｗ）を用い、５００ｍＪ／ｃｎｆで露光した。A comb-shaped positive pattern (<11 lines) with line and space of 50 μm was placed on this laminated board, and an ultra-high pressure mercury lamp (50
00w) and was exposed at 500 mJ/cnf.
これを第１表に示す現像液に、２５℃で、６０秒間浸′
漬し、露光部を溶解した。レジスト露光部の溶解速度を
測定したところ７３ｎｍ／ｓであった。本パターンの断
面を観察したところ、露光部にレジスト残は認められな
かった。This was immersed in the developer shown in Table 1 at 25°C for 60 seconds.
The exposed areas were dissolved. The dissolution rate of the exposed portion of the resist was measured and was 73 nm/s. When the cross section of this pattern was observed, no resist residue was observed in the exposed area.
第１表現像液組成
（実施例２）
実施例１と同様に露光まで処理した積層板を第２表に示
す現像液に、２５℃の温度で、６゜秒間浸漬し、露光部
を溶解した。レジスト露光２部の溶解速度を測定したと
ころ、７３部ｍ／ｓであう
二つだ。本パターンの断面を観察したところ、露光部に
レジスト残は認められなかった。Composition of the first expression developing solution (Example 2) A laminate plate treated up to exposure in the same manner as in Example 1 was immersed in the developer shown in Table 2 at a temperature of 25°C for 6° seconds to dissolve the exposed areas. . When the dissolution rate of 2 parts of resist exposure was measured, it was 73 parts m/s. When the cross section of this pattern was observed, no resist residue was observed in the exposed area.
第２表現像液組成
（比較例１）
実施例１と同様に露光まで処理した積層板を水酸化ナト
リウム１．３％水溶液に、２５℃の温度で、６０秒間浸
漬し、露光部を溶解した。レジスト露光部の溶解速度を
測定したところ、６７部ｍ／ｓであった。本パターンの
断面を観察したところ、露光部にレジスト残が観察され
た。Composition of second expression imager (Comparative Example 1) A laminate plate that had been treated until exposure in the same manner as in Example 1 was immersed in a 1.3% sodium hydroxide aqueous solution at a temperature of 25° C. for 60 seconds to dissolve the exposed areas. . When the dissolution rate of the exposed portion of the resist was measured, it was 67 parts m/s. When the cross section of this pattern was observed, resist residue was observed in the exposed areas.
（比較例２）
実施例１と同様に露光まで処理した積層板を水酸化カリ
ウム１．８％水溶液に、２５℃の温度で、６０秒間浸漬
し、露光部を溶解した。レジスト露光部の溶解速度を測
定したところ、６７部ｍ／ｓであった。本パターンの断
面を観察したと゛ころ、露光部にレジスト残が観察され
た。(Comparative Example 2) A laminate plate treated up to exposure in the same manner as in Example 1 was immersed in a 1.8% potassium hydroxide aqueous solution at a temperature of 25° C. for 60 seconds to dissolve the exposed areas. When the dissolution rate of the exposed portion of the resist was measured, it was 67 parts m/s. When the cross section of this pattern was observed, resist residue was observed in the exposed areas.
（比較例３）
実施例１と同様に露光まで処理した積層板を水酸化テト
ラメチルアンモニウム３％水溶液にドデシルジフェニル
エーテルジスルホン酸ナトリウム０．９％を添加した現
像液を用い、２５℃の温度で、６０秒間浸漬し、露光部
を溶解した。(Comparative Example 3) A laminate plate treated up to exposure in the same manner as in Example 1 was developed at a temperature of 25° C. using a developer prepared by adding 0.9% sodium dodecyl diphenyl ether disulfonate to a 3% aqueous solution of tetramethylammonium hydroxide. It was immersed for 60 seconds to dissolve the exposed area.
レジスト露光部の溶解速度を測定したところ、５９部ｍ
／ｓであった。本パターンの断面を観察したところ、露
光部にレジスト残が観察された。When the dissolution rate of the exposed area of the resist was measured, it was found to be 59 parts m
/s. When the cross section of this pattern was observed, resist residue was observed in the exposed areas.
（比較例４）
水酸化ナトリウム１．３％水溶液にトリエチレングリコ
ールノニルフェニルエーテルを０．９％濃度になるよう
に混合した。トリエチレングリコールノニルフェニルエ
ーテルは、水酸化ナトリウム水溶液にほとんど不溶であ
った。析出物を除去した液に、実施例１と同様に露光ま
で処理した積層板を２５℃、６０秒間浸漬しレジスト露
光部を溶解した。レジスト露光部の溶解速度を測定した
ところ、６７部ｍ／ｓであった。本パターンの断面を観
察したところ、露光部にレジスト残が観察された。(Comparative Example 4) Triethylene glycol nonylphenyl ether was mixed into a 1.3% aqueous sodium hydroxide solution to a concentration of 0.9%. Triethylene glycol nonylphenyl ether was almost insoluble in an aqueous sodium hydroxide solution. The laminate, which had been treated until exposure in the same manner as in Example 1, was immersed in the solution from which the precipitate had been removed at 25° C. for 60 seconds to dissolve the exposed portions of the resist. When the dissolution rate of the exposed portion of the resist was measured, it was 67 parts m/s. When the cross section of this pattern was observed, resist residue was observed in the exposed areas.
（比較例５）
実施例１と同様に露光まで処理した積層板を第３表に示
す現像液に、２５℃、６０秒間浸漬し、レジスト露光部
を溶解した。(Comparative Example 5) A laminate plate treated up to exposure in the same manner as in Example 1 was immersed in the developer shown in Table 3 at 25° C. for 60 seconds to dissolve the exposed portions of the resist.
第３表現像液組成
本パターンの断面を観察したところ、レジスト非露光部
が１．６μｍ減少していた。Third Expression Liquid Composition When the cross section of the pattern was observed, the non-exposed area of the resist was reduced by 1.6 μm.
［発明の効果］
以上のように、本発明のポジ型フォトレジスト用現像液
によれば、従来の現像液に比べ露光部の溶解速度が早く
、レジスト残が発生しない、という格別の効果を奏する
。[Effects of the Invention] As described above, the positive photoresist developer of the present invention has the special effect of dissolving the exposed area faster than conventional developers and not leaving any resist residue. .
Claims (1)
硫酸エステル塩のアニオン界面活性剤を含有させること
を特徴とするポジ型フォトレジスト用現像液。A developing solution for a positive photoresist, characterized in that an aqueous solution of an alkali metal hydroxide contains an anionic surfactant such as a sulfonate salt and/or a sulfuric acid ester salt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30102090A JPH04174850A (en) | 1990-11-08 | 1990-11-08 | Developing solution for positive type photo regist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30102090A JPH04174850A (en) | 1990-11-08 | 1990-11-08 | Developing solution for positive type photo regist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04174850A true JPH04174850A (en) | 1992-06-23 |
Family
ID=17891879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30102090A Pending JPH04174850A (en) | 1990-11-08 | 1990-11-08 | Developing solution for positive type photo regist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04174850A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04204454A (en) * | 1990-11-30 | 1992-07-24 | Tokyo Ohka Kogyo Co Ltd | Developer composition for resist |
| JPH0561205A (en) * | 1991-09-02 | 1993-03-12 | Fuji Photo Film Co Ltd | Image forming method |
| JPH05204164A (en) * | 1992-01-24 | 1993-08-13 | Fuji Photo Film Co Ltd | Image forming method |
-
1990
- 1990-11-08 JP JP30102090A patent/JPH04174850A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04204454A (en) * | 1990-11-30 | 1992-07-24 | Tokyo Ohka Kogyo Co Ltd | Developer composition for resist |
| JPH0561205A (en) * | 1991-09-02 | 1993-03-12 | Fuji Photo Film Co Ltd | Image forming method |
| JPH05204164A (en) * | 1992-01-24 | 1993-08-13 | Fuji Photo Film Co Ltd | Image forming method |
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