KR910001994A - 차등적인 산화물 주입 마스크로 살리사이드와 양립할 수 있는 cmos를 제조하는 방법 - Google Patents
차등적인 산화물 주입 마스크로 살리사이드와 양립할 수 있는 cmos를 제조하는 방법Info
- Publication number
- KR910001994A KR910001994A KR1019900009454A KR900009454A KR910001994A KR 910001994 A KR910001994 A KR 910001994A KR 1019900009454 A KR1019900009454 A KR 1019900009454A KR 900009454 A KR900009454 A KR 900009454A KR 910001994 A KR910001994 A KR 910001994A
- Authority
- KR
- South Korea
- Prior art keywords
- salicide
- implantation mask
- cmos compatible
- manufacturing cmos
- differential oxide
- Prior art date
Links
- 238000002513 implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37148389A | 1989-06-27 | 1989-06-27 | |
US371,483 | 1989-06-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001994A true KR910001994A (ko) | 1991-01-31 |
KR0143408B1 KR0143408B1 (ko) | 1998-07-01 |
Family
ID=23464162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900009454A KR0143408B1 (ko) | 1989-06-27 | 1990-06-26 | 차등적인 산화물 주입 마스크로 살리사이드와 양립할 수 있는 cmos를 제조하는 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5399513A (ko) |
EP (1) | EP0405293B1 (ko) |
JP (1) | JP3042863B2 (ko) |
KR (1) | KR0143408B1 (ko) |
DE (1) | DE69028159T2 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950000141B1 (ko) * | 1990-04-03 | 1995-01-10 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
KR0161885B1 (ko) * | 1995-12-26 | 1999-02-01 | 문정환 | 반도체 소자와 그의 제조방법 |
US5585299A (en) * | 1996-03-19 | 1996-12-17 | United Microelectronics Corporation | Process for fabricating a semiconductor electrostatic discharge (ESD) protective device |
US5963784A (en) * | 1997-05-09 | 1999-10-05 | Vlsi Technology, Inc. | Methods of determining parameters of a semiconductor device and the width of an insulative spacer of a semiconductor device |
KR100247933B1 (ko) * | 1997-08-22 | 2000-03-15 | 윤종용 | 버티드 콘택을 갖는 반도체 소자 및 그 제조방법 |
AU2050900A (en) | 1998-12-28 | 2000-07-31 | Fairchild Semiconductor Corporation | Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage |
US6368986B1 (en) | 2000-08-31 | 2002-04-09 | Micron Technology, Inc. | Use of selective ozone TEOS oxide to create variable thickness layers and spacers |
US6503851B2 (en) * | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off |
US20020123180A1 (en) * | 2001-03-01 | 2002-09-05 | Peter Rabkin | Transistor and memory cell with ultra-short gate feature and method of fabricating the same |
KR100450566B1 (ko) * | 2001-12-24 | 2004-09-30 | 동부전자 주식회사 | 씨모오스형 트랜지스터 제조 방법 |
US7279367B1 (en) | 2004-12-07 | 2007-10-09 | T-Ram Semiconductor, Inc. | Method of manufacturing a thyristor semiconductor device |
US6888176B1 (en) | 2002-10-01 | 2005-05-03 | T-Ram, Inc. | Thyrister semiconductor device |
US6844225B2 (en) * | 2003-01-15 | 2005-01-18 | International Business Machines Corporation | Self-aligned mask formed utilizing differential oxidation rates of materials |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4358890A (en) * | 1978-08-31 | 1982-11-16 | Ibm Corporation | Process for making a dual implanted drain extension for bucket brigade device tetrode structure |
CA1151295A (en) * | 1979-07-31 | 1983-08-02 | Alan Aitken | Dual resistivity mos devices and method of fabrication |
US4356623A (en) * | 1980-09-15 | 1982-11-02 | Texas Instruments Incorporated | Fabrication of submicron semiconductor devices |
US4474624A (en) * | 1982-07-12 | 1984-10-02 | Intel Corporation | Process for forming self-aligned complementary source/drain regions for MOS transistors |
US4470852A (en) * | 1982-09-03 | 1984-09-11 | Ncr Corporation | Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions |
US4480375A (en) * | 1982-12-09 | 1984-11-06 | International Business Machines Corporation | Simple process for making complementary transistors |
JPH0693494B2 (ja) * | 1984-03-16 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
EP0216053A3 (en) * | 1985-09-26 | 1988-01-20 | Motorola, Inc. | Removable sidewall spaces for lightly doped drain formation using one mask level |
US4775642A (en) * | 1987-02-02 | 1988-10-04 | Motorola, Inc. | Modified source/drain implants in a double-poly non-volatile memory process |
US4753898A (en) * | 1987-07-09 | 1988-06-28 | Motorola, Inc. | LDD CMOS process |
US4771014A (en) * | 1987-09-18 | 1988-09-13 | Sgs-Thomson Microelectronics, Inc. | Process for manufacturing LDD CMOS devices |
US4963504A (en) * | 1987-11-23 | 1990-10-16 | Xerox Corporation | Method for fabricating double implanted LDD transistor self-aligned with gate |
US4949136A (en) * | 1988-06-09 | 1990-08-14 | University Of Connecticut | Submicron lightly doped field effect transistors |
US5219784A (en) * | 1990-04-02 | 1993-06-15 | National Semiconductor Corporation | Spacer formation in a bicmos device |
US5091763A (en) * | 1990-12-19 | 1992-02-25 | Intel Corporation | Self-aligned overlap MOSFET and method of fabrication |
-
1990
- 1990-06-19 EP EP90111514A patent/EP0405293B1/en not_active Expired - Lifetime
- 1990-06-19 DE DE69028159T patent/DE69028159T2/de not_active Expired - Fee Related
- 1990-06-26 KR KR1019900009454A patent/KR0143408B1/ko not_active IP Right Cessation
- 1990-06-27 JP JP2166928A patent/JP3042863B2/ja not_active Expired - Lifetime
-
1992
- 1992-11-17 US US07/979,562 patent/US5399513A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH03102868A (ja) | 1991-04-30 |
DE69028159T2 (de) | 1997-03-27 |
US5399513A (en) | 1995-03-21 |
JP3042863B2 (ja) | 2000-05-22 |
KR0143408B1 (ko) | 1998-07-01 |
EP0405293B1 (en) | 1996-08-21 |
EP0405293A1 (en) | 1991-01-02 |
DE69028159D1 (de) | 1996-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910001994A (ko) | 차등적인 산화물 주입 마스크로 살리사이드와 양립할 수 있는 cmos를 제조하는 방법 | |
JPS562652A (en) | Method of fabricating integrated mos circuit | |
DE3752197D1 (de) | Photomaske und Herstellungsverfahren dafür | |
DE3570949D1 (en) | Method of fabricating vlsi cmos devices | |
FR2569566B1 (fr) | Implant et son procede de fabrication | |
DE3372103D1 (en) | Poly(glycolic acid)/poly(oxyethylene)triblock copolymers and method of manufacturing the same | |
FR2523848B1 (fr) | Poche medicale et son procede de fabrication | |
FR2600882B1 (fr) | Prothese tubulaire auto-expansible et son procede de fabrication. | |
KR910001995A (ko) | 카운터도핑 기술을 사용하는 이중 확산 드레인 cmos 디바이스의 제조방법 | |
FR2624419B1 (fr) | Disque d'accouplement electromagnetique et methode de fabrication de celui-ci | |
FR2667861B1 (fr) | Preparation d'emaux vitreux et fabrication de masses d'email. | |
FR2655501B1 (fr) | Filtre couleur et son procede de fabrication. | |
FR2587537B1 (fr) | Inductance miniature et son procede de fabrication | |
ES496342A0 (es) | Metodo de fabricacion de elementos de acoplamiento de cie- rres de cremallera | |
FR2563523B1 (fr) | Compositions de siloxane-imide-diols et procede de fabrication | |
DE3174638D1 (en) | A method of fabricating a self-aligned integrated circuit structure using differential oxide growth | |
JPS5669831A (en) | Method of manufacturing xxray mask | |
BR8705460A (pt) | Processo de fabricacao de um ima permanente | |
KR960703806A (ko) | 우라늄 산화물 제조방법(uranium oxide production) | |
DE68926659T2 (de) | Photomaske und Herstellungsverfahren | |
DE3785292D1 (de) | Hochleistungslasermaske und herstellungsverfahren. | |
KR910008107A (ko) | 형광체, 형광체의 표면처리방법 및 형광막의 제조방법 | |
FR2677352B1 (fr) | Ceramiques transparentes et procede de fabrication de celles-ci. | |
FR2568723B1 (fr) | Circuit integre notamment de type mos et son procede de fabrication | |
FR2660179B1 (fr) | Ustensile de cuisson et son procede de fabrication. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20070403 Year of fee payment: 10 |
|
LAPS | Lapse due to unpaid annual fee |