KR900014857A - 표면 구조물 검사방법 - Google Patents

표면 구조물 검사방법 Download PDF

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Publication number
KR900014857A
KR900014857A KR1019900003786A KR900003786A KR900014857A KR 900014857 A KR900014857 A KR 900014857A KR 1019900003786 A KR1019900003786 A KR 1019900003786A KR 900003786 A KR900003786 A KR 900003786A KR 900014857 A KR900014857 A KR 900014857A
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KR
South Korea
Prior art keywords
surface structure
metal
semiconductor film
plasmon
refractive index
Prior art date
Application number
KR1019900003786A
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English (en)
Inventor
히켈 베르너
크놀 볼프강
로텐 헤우슬러 베노
Original Assignee
방에르트, 바르츠
바스프 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 방에르트, 바르츠, 바스프 악티엔게젤샤프트 filed Critical 방에르트, 바르츠
Publication of KR900014857A publication Critical patent/KR900014857A/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Materials For Medical Uses (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Paper (AREA)
  • Compression-Type Refrigeration Machines With Reversible Cycles (AREA)

Abstract

내용 없음.

Description

표면 구조물 검사방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실험 장치의 개략도,
그리고 제2도는 본 발명의 SPM(surface plasmon microsopy)장치에 의해서 기록된 현미경 사진.

Claims (4)

  1. 표본 표준 구조물을 플라즈몬 표면 플라리톤 장으로 도입시키는 단계, 상기 표면 구조물을 표면 플라즈몬 현미법(SPM)에 의해 주사하는 단계로 구성되는, 상기 표면의 굴절률/높이 변화에 있어서 차이가 나는 상기 표면 구조물을 검사하는 방법.
  2. 제1항에 있어서, 상기 표면 구조물이, 장치에 의해 유리프리즘 표면상에 있는 금속 또는 반도체 막 쪽으로 상기 금속 또는 반도체 막에 평행하게 이동하는 것을 특징으로 하는, 상기 표면의 굴절률/높이 변화에 있어서 차이가 나는 상기 표면 구조물을 검사하는 방법.
  3. 제2항에 있어서, 검사될 상기 표면 구조물과 상기 금속 또는 반도체막 사이에 진공이나 투명 매질이 존재하는 것을 특징으로 하는, 상기 표면의 굴절률/높이 변화에 있어서 차이가 나는 상기 표면 구조를 검사하는 방법.
  4. 제3항에 있어서, 검사할 상기 표본 표면 구조물과 상기 금속 또는 반도체막 사이에 위치하는 상기 투명 매질은 액체나 기체인 것을 특징으로 하는, 상기 표면의 굴절률/높이 변화에 잇어서 차이가 나는 상기 표면구조물을 검사하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003786A 1989-03-21 1990-03-21 표면 구조물 검사방법 KR900014857A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3909143A DE3909143A1 (de) 1989-03-21 1989-03-21 Verfahren zur untersuchung von oberflaechenstrukturen
DEP3909143.0 1989-03-21

Publications (1)

Publication Number Publication Date
KR900014857A true KR900014857A (ko) 1990-10-25

Family

ID=6376798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003786A KR900014857A (ko) 1989-03-21 1990-03-21 표면 구조물 검사방법

Country Status (11)

Country Link
US (1) US5028132A (ko)
EP (1) EP0388872B1 (ko)
JP (1) JPH0348106A (ko)
KR (1) KR900014857A (ko)
AT (1) ATE92619T1 (ko)
AU (1) AU622530B2 (ko)
CA (1) CA2012597A1 (ko)
DE (2) DE3909143A1 (ko)
DK (1) DK0388872T3 (ko)
ES (1) ES2042108T3 (ko)
FI (1) FI901417A0 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3909144A1 (de) * 1989-03-21 1990-09-27 Basf Ag Verfahren zur bestimmung von brechungsindex und schichtdicke duenner schichten
JP2609953B2 (ja) * 1991-03-08 1997-05-14 理化学研究所 表面プラズモン顕微鏡
US5239183A (en) * 1991-04-30 1993-08-24 Dainippon Screen Mfg. Co., Ltd. Optical gap measuring device using frustrated internal reflection
JP2802868B2 (ja) * 1992-12-22 1998-09-24 大日本スクリーン製造株式会社 半導体ウエハの非接触電気測定用センサおよびその製造方法、並びに、そのセンサを用いた測定方法
JPH06349920A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 半導体ウェハの電荷量測定方法
SE9700384D0 (sv) * 1997-02-04 1997-02-04 Biacore Ab Analytical method and apparatus
KR20030047567A (ko) * 2001-12-11 2003-06-18 한국전자통신연구원 표면 플라즈몬 공명 센서 시스템
US7088449B1 (en) * 2002-11-08 2006-08-08 The Board Of Trustees Of The Leland Stanford Junior University Dimension measurement approach for metal-material
US20050057754A1 (en) * 2003-07-08 2005-03-17 Smith David E. A. Measurement of thin film properties using plasmons
WO2005052557A1 (en) * 2003-11-28 2005-06-09 Lumiscence A/S An examination system for examination of a specimen; sub-units and units therefore, a sensor and a microscope
US7824141B2 (en) 2007-08-03 2010-11-02 Newfrey Llc Blind rivet
DE102008014335B4 (de) 2008-03-14 2009-12-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bestimmung einer Brechzahl eines Messobjekts
DE102008041825A1 (de) 2008-09-05 2010-03-11 Manroland Ag Zerstörungsfreies Prüfverfahren des Aushärtungs- oder Trocknungsgrades von Farben und Lacken
CN102289083B (zh) * 2011-08-23 2013-04-03 中国科学院光电技术研究所 一种远场超分辨可视成像装置及成像方法
DE102013015065A1 (de) * 2013-09-09 2015-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Anordnung zum Erfassen von optischen Brechzahlen oder deren Änderung
CN107153049B (zh) * 2017-05-31 2019-11-12 华中科技大学 一种抑制杂散光的物质折射率测量装置
CN109323661B (zh) * 2018-12-06 2020-06-09 湖北科技学院 基于光束空间古斯-汉森位移的高灵敏度角度位移传感器
JP2020173207A (ja) * 2019-04-12 2020-10-22 株式会社ミツトヨ 形状測定機

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159105A (en) * 1979-05-29 1980-12-11 Ibm Thickness measuring method of dielectric film
CA1321488C (en) * 1987-08-22 1993-08-24 Martin Francis Finlan Biological sensors
GB8801807D0 (en) * 1988-01-27 1988-02-24 Amersham Int Plc Biological sensors
DE3909144A1 (de) * 1989-03-21 1990-09-27 Basf Ag Verfahren zur bestimmung von brechungsindex und schichtdicke duenner schichten

Also Published As

Publication number Publication date
ES2042108T3 (es) 1993-12-01
DE3909143A1 (de) 1990-09-27
DK0388872T3 (da) 1993-09-27
EP0388872A3 (de) 1991-08-07
JPH0348106A (ja) 1991-03-01
CA2012597A1 (en) 1990-09-21
EP0388872B1 (de) 1993-08-04
ATE92619T1 (de) 1993-08-15
AU622530B2 (en) 1992-04-09
EP0388872A2 (de) 1990-09-26
DE59002144D1 (de) 1993-09-09
US5028132A (en) 1991-07-02
FI901417A0 (fi) 1990-03-21
AU5147790A (en) 1990-09-27

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