KR900009472Y1 - Over voltage protective circuit - Google Patents

Over voltage protective circuit Download PDF

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Publication number
KR900009472Y1
KR900009472Y1 KR2019880001948U KR880001948U KR900009472Y1 KR 900009472 Y1 KR900009472 Y1 KR 900009472Y1 KR 2019880001948 U KR2019880001948 U KR 2019880001948U KR 880001948 U KR880001948 U KR 880001948U KR 900009472 Y1 KR900009472 Y1 KR 900009472Y1
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KR
South Korea
Prior art keywords
scr
thyristor
transistor
line
ground point
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KR2019880001948U
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Korean (ko)
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KR890018259U (en
Inventor
홍보현
Original Assignee
삼성전기 주식회사
서주인
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Priority to KR2019880001948U priority Critical patent/KR900009472Y1/en
Publication of KR890018259U publication Critical patent/KR890018259U/en
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Publication of KR900009472Y1 publication Critical patent/KR900009472Y1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/008—Intrinsically safe circuits

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Abstract

내용 없음.No content.

Description

전력공급기의 과전압 방지회로Overvoltage Protection Circuit of Power Supply

제 1 도는 종래의 회로도.1 is a conventional circuit diagram.

제 2 도는 본 고안의 회로도.2 is a circuit diagram of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

SCR : 사이리스터 ZD : 제너다이오드SCR: Thyristor ZD: Zener Diode

R5: 저항 Q3: 발진용트랜지스터R 5 : Resistance Q 3 : Oscillation transistor

본 고안은 전류트랜스 및 트랜지스터 인버터방식의 전력공급기등에서 그 출력측에서의 과전압을 방지토록 하는 과전압방지회로에 관한 것이다.The present invention relates to an overvoltage protection circuit for preventing overvoltage at the output side of a current supply and a transistor inverter type power supply.

이러한 기술과 관련된 제 1 도에의 전력공급기는 전류트랜스(T1)의 1차측코일을 스위칭 트랜지스터(Q1)로 고주파동작시키고 그 2차측에는 복수의 직류전압을 얻어내기 위한 2차측 코일 및 정류회로가 연결되어 12V 또는 5V의 출력을 얻도록 구성되고, 상기 12V라인과 접지점사이에는 사이리스터(SCR)의 애노드 및 캐소드가 연결되며, 5V라인에 제너다이오드(ZD) 및 저항(R5)이 접지점으로 직결되고 이 제너다이오드(ZD) 및 저항(R5) 사이에서 상기 사이리스터(SCR)게이트로 이어지며, 5V라인과 접지점 사이에는 1차측코일 동작용트랜지스터(Q1)의 드라이브용 트랜지스터(Q2)를 전류트랜스(T2)로 동작시키는 트랜지스터(Q3)가 연결되어져서 상기 사이리스터(SCR) 등에 의해 그 출력측이 과전압이 보호토록 되어 있다.The power supply in FIG. 1 related to this technique operates the high frequency operation of the primary side coil of the current transformer T 1 with the switching transistor Q 1 , and the secondary side coil and rectification for obtaining a plurality of DC voltages on the secondary side. The circuit is connected to obtain an output of 12V or 5V, and an anode and a cathode of the thyristor (SCR) are connected between the 12V line and the ground point, and a zener diode (ZD) and a resistor (R 5 ) are connected to the 5V line at the ground point. And the thyristor (SCR) gate between the Zener diode (ZD) and the resistor (R 5 ), and the drive transistor (Q 2 ) of the primary coil operating transistor (Q 1 ) between the 5V line and the ground point. Is connected to the current transformer T 2 so that the output side of the transistor Q 3 is protected by the thyristor SCR or the like.

즉 여기서는 5V라인에 일정전압이상이 인가되면 사이리스터(SCR)가 언되고 12V라인이 접지점과 이어져서 1차측 구동용 트랜지스터(Q3)이 발진동작이 멈추도록 되어있다.In other words, when a predetermined voltage or more is applied to the 5V line, the thyristor SCR is frozen and the 12V line is connected to the ground point so that the primary driving transistor Q 3 stops the oscillation operation.

그러나 이때는 5V라인에 0전압이 유기되므로 사이리스터(SCR)는 원상복귀되는 현상이 일어나므로 "탁, 탁"하는 소음과 함께 반복되는 발진동작이 일어나서 회로부품에 손상을 주세 된다.However, at this time, since zero voltage is induced in the 5V line, the thyristor SCR is returned to its original state, and thus repeated oscillation operation occurs along with “taking” and “taking” noise, thereby damaging circuit components.

본 고안은 종래의 이러한 결점을 해결하고자 안출한 것으로서 이는 상기 사이리스터(SCR)에 의한 보호회로를 발진용 트랜지스터(Q3)의 베이스측으로 구비시킨 회로를 제공하므로서 그 회로적 신뢰성을 획득할 목적이 있는 것이다.The present invention has been made to solve such a drawback of the prior art, which provides a circuit having the protection circuit by the thyristor (SCR) on the base side of the oscillation transistor (Q 3 ), which has the purpose of obtaining the circuit reliability. will be.

이하에서 이를 좀더 구체적으로 설명하여 보면 다음과 같다.This will be described in more detail below.

즉, 제 2 도에는 본 고안의 회로를 나타내고 있다.That is, FIG. 2 shows a circuit of the present invention.

여기서는 상기 트랜지스터(Q1)의 베이스측과 접지점사이에 사이리스터(SCR)의 애노드 및 캐소드가 각기 연결되고 상기 트랜지스터(Q1)의 콜렉터측이 5V라인으로 연결되며 이 5V라인과 접지점사이에는 제너다이오드(ZD) 및 저항(R3)을 직결하고 이들 사이에서 사이리스터(SCR)케이트를 연결시킨 구성으로 되어진다.Here, an anode and a cathode of the thyristor SCR are connected between the base side of the transistor Q 1 and a ground point, respectively, and a collector side of the transistor Q 1 is connected to a 5V line, and a zener diode is connected between the 5V line and the ground point. (ZD) and resistor (R 3 ) are connected directly, and the thyristor (SCR) gate is connected between them.

이러한 구성의 본 고안은 5V라인이 전압 상승하여 사이리스터(SCR)가 턴온(Turn On)되면 트랜지스터(Q3)가 상시 언(ON)상태를 유지케 되므로서 전류트랜스(T2)측으로의 발진동작이 일어나지 않게 되어 그 회로는 동작이 정지되어진다.In this configuration, when the 5V line rises and the thyristor SCR is turned on, the transistor Q 3 is kept in an ON state and the oscillation operation toward the current transformer T 2 is performed. This does not occur and the circuit is stopped.

그러므로 본 고안은 종래와 같이 과부하 방지용 사이리스터(SCR)가 5V라인에의 0V유기로 인한 반복동작으로 인한 소음이나 회로부품에 손상을 입히게 되는 불리를 제거할수 있는 것이다.Therefore, the present invention can eliminate the disadvantage that the overload prevention thyristor (SCR) causes noise or damage to circuit components due to repetitive operation due to 0V organic to 5V line.

Claims (1)

전력공급기의 복수개 직류 출력측과 발진용 트랜지스터(Q3)사이에 사이리스터(SCR)를 포함한 과전압방지회로를 구비시킨것에 있어서 상기 트랜지스터(Q3)의 베이스와 접지점사이에는 사이리스터(SCR)의 애노드와 캐소드를 각기 연결하고 이의 게이트는 복수개 직류직류 출력중 어느하나의 라인과 접지점사이에 직결시킨 제너다이오드(ZD) 및 저항(R2)과의 사이에 연결시킨 구성을 특징으로 하는 전력공급기의 과전압방지회로.An overvoltage protection circuit including a thyristor (SCR) is provided between a plurality of direct current outputs of the power supply and the oscillation transistor (Q 3 ). The anode and the cathode of the thyristor (SCR) are disposed between the base and the ground point of the transistor (Q 3 ). And its gate is connected between a zener diode (ZD) and a resistor (R 2 ) directly connected between any one of a plurality of DC direct current outputs and a ground point. .
KR2019880001948U 1988-02-15 1988-02-15 Over voltage protective circuit KR900009472Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019880001948U KR900009472Y1 (en) 1988-02-15 1988-02-15 Over voltage protective circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019880001948U KR900009472Y1 (en) 1988-02-15 1988-02-15 Over voltage protective circuit

Publications (2)

Publication Number Publication Date
KR890018259U KR890018259U (en) 1989-09-09
KR900009472Y1 true KR900009472Y1 (en) 1990-10-12

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KR890018259U (en) 1989-09-09

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