KR900007122A - 전자 광학장치 - Google Patents
전자 광학장치 Download PDFInfo
- Publication number
- KR900007122A KR900007122A KR1019890014535A KR890014535A KR900007122A KR 900007122 A KR900007122 A KR 900007122A KR 1019890014535 A KR1019890014535 A KR 1019890014535A KR 890014535 A KR890014535 A KR 890014535A KR 900007122 A KR900007122 A KR 900007122A
- Authority
- KR
- South Korea
- Prior art keywords
- electro
- optical
- output signal
- optical device
- integrated circuit
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- 239000011241 protective layer Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
- 전기 입력 신호에 응답하여 광출력 신호를 방출하는 광 전송장치(예를들어, 10)와, 상기 광출력 신호를 동등한 전기출력 신호로 전환시키기 위해 상기 광출력 신호에 응답하는 광수신 장치(예를들어, 14) 및, 상기 전기 출력신호에 응답하며 적어도 그 일부분(예를들어, 24)이 광 노출에 대단히 민감한 집적회로 수단(예를들어, 20)을 포함하는 전자-광학 장치에 있어서, 상기 전자 광학 장치는 상기 집적 회로수단의 적어도 상기 대단히 민감한 부분을 커버하도록 배치되며, 상기 광출력 신호가 상기 집적 회로수단의 대단히 상기 민감한 부분의 실행에 영향을 미치는 것을 방지하도로 충분히 불투명한 비-도전 보호층(예를들어, 40)을 또한 포함하는 것을 특징으로 하는 전자-광학 장치.
- 제1항에 있어서, 상기 보호층이 집적 회로 제조 공정 이후에 인가된 감광성 내식막 물질을 포함하는 것을 특징으로 하는 전자-광학 장치.
- 제2항에 있어서, 상기 감광성 내식막이 충분히 불투명하도록 증가된 온도로 상기 감광성 내식막이 가열되는 것을 특징으로 하는 전자-광학 장치.
- 제1항에 있어서, 상기 보호층이 실온에서 황화된(RTV)물질을 포함하는 것을 특징으로 하는 전자-광학 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25767188A | 1988-10-14 | 1988-10-14 | |
US257671 | 1988-10-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900007122A true KR900007122A (ko) | 1990-05-09 |
Family
ID=22977254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890014535A KR900007122A (ko) | 1988-10-14 | 1989-10-11 | 전자 광학장치 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0364163A3 (ko) |
JP (1) | JPH02183576A (ko) |
KR (1) | KR900007122A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8140605B2 (en) | 2007-05-29 | 2012-03-20 | Patton Jr Roy Chilson | Electronic date calculator |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3038772B2 (ja) * | 1990-03-29 | 2000-05-08 | ソニー株式会社 | 赤外線センサ |
AU6509900A (en) * | 1999-08-04 | 2001-03-05 | Qt Optoelectronics, Inc. | Optocoupler on a metallized pcb and method of manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
JPS55146967A (en) * | 1979-05-02 | 1980-11-15 | Hitachi Ltd | Semiconductor ic device |
JPS5819030A (ja) * | 1981-07-27 | 1983-02-03 | Toshiba Corp | 光結合半導体装置 |
US4508758A (en) * | 1982-12-27 | 1985-04-02 | At&T Technologies, Inc. | Encapsulated electronic circuit |
JPS6197606A (ja) * | 1984-10-18 | 1986-05-16 | Matsushita Electronics Corp | 光半導体集積回路 |
US4804866A (en) * | 1986-03-24 | 1989-02-14 | Matsushita Electric Works, Ltd. | Solid state relay |
JPS6312181A (ja) * | 1986-07-03 | 1988-01-19 | Toshiba Corp | 樹脂封止型半導体光結合装置 |
JPH0815211B2 (ja) * | 1986-09-25 | 1996-02-14 | 株式会社日立製作所 | 光配線式半導体集積回路 |
-
1989
- 1989-10-05 EP EP19890310211 patent/EP0364163A3/en not_active Withdrawn
- 1989-10-11 KR KR1019890014535A patent/KR900007122A/ko not_active Application Discontinuation
- 1989-10-12 JP JP1264079A patent/JPH02183576A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8140605B2 (en) | 2007-05-29 | 2012-03-20 | Patton Jr Roy Chilson | Electronic date calculator |
Also Published As
Publication number | Publication date |
---|---|
JPH02183576A (ja) | 1990-07-18 |
EP0364163A2 (en) | 1990-04-18 |
EP0364163A3 (en) | 1991-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19891011 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19891011 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19921028 Patent event code: PE09021S01D |
|
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 19930223 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19921028 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |