KR900005446A - Semiconductor devices - Google Patents

Semiconductor devices Download PDF

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Publication number
KR900005446A
KR900005446A KR1019890011734A KR890011734A KR900005446A KR 900005446 A KR900005446 A KR 900005446A KR 1019890011734 A KR1019890011734 A KR 1019890011734A KR 890011734 A KR890011734 A KR 890011734A KR 900005446 A KR900005446 A KR 900005446A
Authority
KR
South Korea
Prior art keywords
semiconductor device
detection resistor
semiconductor
switching means
load
Prior art date
Application number
KR1019890011734A
Other languages
Korean (ko)
Other versions
KR920010818B1 (en
Inventor
다쯔히꼬 후지히라
Original Assignee
나까오 다께시
후지덴끼 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나까오 다께시, 후지덴끼 가부시기가이샤 filed Critical 나까오 다께시
Publication of KR900005446A publication Critical patent/KR900005446A/en
Application granted granted Critical
Publication of KR920010818B1 publication Critical patent/KR920010818B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음.No content.

Description

반도체 디바이스Semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 실시예에 따르는 반도체 디바이스의 회로도.2 is a circuit diagram of a semiconductor device according to an embodiment of the present invention.

제3도는 제2도의 반도체 디바이스에 대한 동작 곡선도.3 is an operating curve diagram for the semiconductor device of FIG.

제4도는 제2도의 반도체 디바이스의 평면도.4 is a plan view of the semiconductor device of FIG.

Claims (8)

하나의 주단자가 부하에 연결된 한쌍의 주단자(11), (12)와, 주단자들(11), (12)사이에 흐르는 전류를 제어하기 위해 그들사이에 병렬연결되어 각각의 반도체 소자에 흐르는 전류를 제어하는 다수의 반도체소자 및, 제어단자(19)와 선정된 하나의 주단자 사이의 단락을 위해 부하가 단락될 때마다 주단자들 사이의 반도체 소자에 흐르는 전류를 제안하는 스위칭 수단(18)을 포함하는 것을 특징으로 하는 단락보호회로를 구비한 반도체 디바이스.One main terminal flows to each semiconductor element in parallel with each other in order to control the current flowing between the main terminals 11 and 12 connected to the load and the main terminals 11 and 12. A plurality of semiconductor devices for controlling the current, and switching means 18 for suggesting a current flowing in the semiconductor device between the main terminal each time the load is shorted for a short circuit between the control terminal 19 and the selected one main terminal. A semiconductor device having a short-circuit protection circuit comprising a). 제1항에 있어서, 반도체 소자들은 하나의 반도체기판(1)에 완전히 통합되는 것을 특징으로 하는 반도체 디바이스.2. A semiconductor device according to claim 1, wherein the semiconductor elements are fully integrated in one semiconductor substrate (1). 제1항에 있어서, 스위칭수단(18)은 스위칭 트랜지스터를 포함하는 것을 특징으로 하는 반도체 디바이스.A semiconductor device according to claim 1, characterized in that the switching means (18) comprise a switching transistor. 제2항에 있어서, 스위칭 트랜지스터는 MOSFET인 것을 특징으로 하는 반도체 디바이스.The semiconductor device of claim 2, wherein the switching transistor is a MOSFET. 제3항에 있어서, 검출저항기(15)는 스위칭수단(18)에 연결되어 전압을 공급하고, 그것에 의해 스위칭수단(18)은 부하가 단락될 때마다 제어단자(19)와 선정된 주단자를 단락시키는 것을 특징으로 하는 반도체 디바이스.4. The detection resistor (15) according to claim 3, wherein the detection resistor (15) is connected to the switching means (18) to supply a voltage, whereby the switching means (18) connects the control terminal (19) and the selected main terminal whenever the load is shorted. Short circuiting, characterized in that the semiconductor device. 제5항에 있어서, 공급전압은 스위칭수단(18)의 임계전압과 같거나, 또는 큰 것을 특징으로 하는 반도체 디바이스.6. A semiconductor device according to claim 5, wherein the supply voltage is equal to or greater than the threshold voltage of the switching means (18). 제5항에 있어서, 검출저항기(15)는 다결정 실리콘막을 포함하는 것을 특징으로 하는 반도체 디바이스.6. A semiconductor device according to claim 5, wherein the detection resistor (15) comprises a polycrystalline silicon film. 제5항에 있어서, 검출저항기(15)는 반도체소자중의 선정된 하나에 연결되고, 검출저항기의 저항은 선정된 반도체소자의 동작저항과 같거나, 또는 크며, 그것에 의해 주단자들(11), (12)사이에 흐르는 전류는 부하가 단락되지 않을 때는 언제나 제한되지 않는 것을 특징으로 하는 반도체 디바이스.6. The detection resistor (15) according to claim 5, wherein the detection resistor (15) is connected to a selected one of the semiconductor devices, and the resistance of the detection resistor is equal to or larger than the operating resistance of the selected semiconductor device, whereby the main terminals (11) And the current flowing between (12) is not limited whenever the load is not shorted. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890011734A 1988-09-01 1989-08-18 Semiconductor devices KR920010818B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88-218766 1988-09-01
JP63-218766 1988-09-01
JP63218766A JPH0266975A (en) 1988-09-01 1988-09-01 Semiconductor device

Publications (2)

Publication Number Publication Date
KR900005446A true KR900005446A (en) 1990-04-14
KR920010818B1 KR920010818B1 (en) 1992-12-17

Family

ID=16725064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011734A KR920010818B1 (en) 1988-09-01 1989-08-18 Semiconductor devices

Country Status (4)

Country Link
JP (1) JPH0266975A (en)
KR (1) KR920010818B1 (en)
DE (1) DE3927307A1 (en)
FR (1) FR2635929A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479758A (en) * 1990-07-19 1992-03-13 Fuji Electric Co Ltd Driving circuit of current sensing igbt
JP3180831B2 (en) * 1991-03-22 2001-06-25 富士電機株式会社 Insulated gate control semiconductor device
JPH04323863A (en) * 1991-04-23 1992-11-13 Toyota Autom Loom Works Ltd Semiconductor device
DE4122653C2 (en) * 1991-07-09 1996-04-11 Daimler Benz Ag Controllable semiconductor switching device with integrated current limitation and overtemperature shutdown
JPH05315852A (en) * 1992-05-12 1993-11-26 Fuji Electric Co Ltd Current limit circuit and constant voltage source for the same
JP3084982B2 (en) * 1992-11-25 2000-09-04 富士電機株式会社 Semiconductor device
JP4748149B2 (en) 2007-12-24 2011-08-17 株式会社デンソー Semiconductor device
JP4811827B2 (en) * 2010-02-08 2011-11-09 ルネサスエレクトロニクス株式会社 Semiconductor device
CN102570809B (en) * 2010-12-31 2016-02-24 意法半导体研发(深圳)有限公司 Short-circuit protection circuit and method
CN111371080B (en) * 2018-12-25 2022-08-30 上海睿驱微电子科技有限公司 Equipment with overcurrent limiting function and construction method thereof
CN111370478B (en) * 2018-12-25 2022-04-01 上海睿驱微电子科技有限公司 Polycrystalline silicon with overcurrent limiting function and construction method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073854B2 (en) * 1985-12-18 1995-01-18 株式会社日立製作所 Composite semiconductor device
US4667121A (en) * 1986-05-27 1987-05-19 Motorola, Inc. Integrated circuit speed controller
JPH0666472B2 (en) * 1987-06-22 1994-08-24 日産自動車株式会社 MOSFET with overcurrent protection function

Also Published As

Publication number Publication date
FR2635929A1 (en) 1990-03-02
JPH0266975A (en) 1990-03-07
DE3927307A1 (en) 1990-04-05
KR920010818B1 (en) 1992-12-17

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