KR900004863B1 - Production method of membrane of conduction of electricity - Google Patents
Production method of membrane of conduction of electricity Download PDFInfo
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- KR900004863B1 KR900004863B1 KR1019870014651A KR870014651A KR900004863B1 KR 900004863 B1 KR900004863 B1 KR 900004863B1 KR 1019870014651 A KR1019870014651 A KR 1019870014651A KR 870014651 A KR870014651 A KR 870014651A KR 900004863 B1 KR900004863 B1 KR 900004863B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
Description
도면은 본 발명을 실현하기 위한 스퍼터장치의 개략도.BRIEF DESCRIPTION OF THE DRAWINGS The schematic diagram of the sputter apparatus for implementing this invention.
본 발명은 투명도전막의 제조방법에 관한 것으로, 특히 유리기판 세라믹등의 표면상에 투과도와 전도도가 우수하며, 백탄현상이나 흑화현상이 발생되지 않고, 기판표면상에 부착력이 우수한 균질의 투명도전막을 제조하는 방법에 관한 것이다.The present invention relates to a method for manufacturing a transparent conductive film, and in particular, a homogeneous transparent conductive film having excellent transmittance and conductivity on the surface of a glass substrate ceramic and the like, without causing white coal or blackening, and having excellent adhesion to the substrate surface. It relates to a manufacturing method.
일반적으로, 빛에 대한 투과성을 가지는 투명도전막은 액정표시소자, EL표시소자, 플라즈마표시소자 등의 표시소자류나 광전지 촬상관등의 감광소자류등에 사용되고 있다. 투명도전막을 형성하는 방법으로는 대체적으로 스프레이방법, 열증착법, 스퍼터방법등이 알려져 있으나, 이러한 방법을 사용하는 경우에는 디포지션을 하는 동안 기판을 가열하여야 하는가 하면, 디포지션후에 기판의 열처리를 하여야만 만족할만한 전기적, 광학적 성질을 얻을 수 있었다.In general, transparent conductive films having light permeability are used for display elements such as liquid crystal display elements, EL display elements, plasma display elements, and photosensitive elements such as photovoltaic imaging tubes. As a method of forming a transparent conductive film, a spray method, a thermal deposition method, and a sputtering method are generally known. However, in such a method, the substrate must be heated during deposition, or the substrate must be heat-treated after deposition. Satisfactory electrical and optical properties were obtained.
이러한, 열처리는 450-500℃정도에서 약 1시간이상 가열하여야 하는데, 기판의 열처리를 배제하는 투명도전막의 제조방법이 J.Electro chem. SeC, Vol 122, No 12 PP 1719를 통하여 발표된 바 있다.The heat treatment should be heated at about 450-500 ° C. for about 1 hour or more. It was published in SeC, Vol 122, No 12 PP 1719.
이 방법에 의하면, 디포지션의 열처리와 디포지션하는 동안의 열처리를 전혀 행하지 않고, 기판의 열처리를 완전히 RF 스퍼터에 의한 전자의 충돌로 행하는 것이다. 그런데, 이러한 제조방법에 의하면 초기 기판의 온도가 매우 낮아 스퍼터를 시작하는 경우에는 기판표면상에 막의 부착력이 약화되는 경향이 있어 백탁현상이나 흑화현상이 빈번히 발생되어 균질의 박막을 얻는데 부적합하다.According to this method, the heat treatment of the deposition and the heat treatment during the deposition are not performed at all, and the heat treatment of the substrate is completely performed by the collision of electrons by the RF sputter. However, according to this manufacturing method, when the temperature of the initial substrate is very low, sputtering tends to weaken the adhesion of the film on the surface of the substrate, so that whitening or blackening occurs frequently and is not suitable for obtaining a homogeneous thin film.
본 발명은 상기한 문제점들을 해소하기 위하여 발명한 것으로써, 기판유리상의 부착강도를 높이고, 흑화현상내지는 백탁현상을 감소시키며, 뛰어난 투과도를 얻을 수 있어 양산시 균질의 막을 얻을 수 있는 투명도전막의 투명법을 제공함에 그 목적이 있다.The present invention has been invented to solve the above problems, to increase the adhesion strength on the substrate glass, to reduce the blackening phenomenon or to the clouding phenomenon, and to obtain a good transmittance of the transparent conductive film to obtain a homogeneous film during mass production The purpose is to provide.
이를 구현할 수 있는 본 발명은 아르곤분위기속에서 RF 스퍼터에 의하여 유리기판 CG-7059위에 제작되는 것으로, 스퍼터장치는 인라인 타입으로 마그네트론방식이 사용되어지며, In2O3: Sn의 타겟트가 사용된다.The present invention that can implement this is produced on the glass substrate CG-7059 by RF sputter in the argon atmosphere, the sputter device is an in-line type magnetron method is used, In 2 O 3 : Target of Sn is used .
이하 본 발명을 첨부된 도면에 의하여 공정수순에 따라 실시예로서 설명한다.Hereinafter, the present invention will be described with reference to the accompanying drawings by way of example.
[실시예]EXAMPLE
(제1공정)(Step 1)
먼저, 기판유리를 깨끗이 세정한 다음, 로드챔버(1)에 넣고, 배기수단(2)를 통하여 5×10-8Torr 진공도를 유지시킨다.First, the substrate glass is cleaned and then placed in the load chamber 1, and maintained at 5 x 10 -8 Torr vacuum degree through the exhaust means (2).
초기진공도가 5×10-8Torr에 이르면, 열처리 챔버(3)으로 기판유리를 이동시켜 500-600℃에서 5-10분간 열처리한다.When the initial vacuum reaches 5 × 10 -8 Torr, the substrate glass is transferred to the heat treatment chamber 3 and heat treated at 500-600 ° C. for 5-10 minutes.
(제2공정)(2nd step)
스퍼터챔버(4)에 아르곤 가스를 주입시켜 아르곤 압력이 10마이크론의 저압이 되게한 다음, 기판유리를 스퍼터챔버(4)로 이동시켜 매칭네트워크(5)를 통하여 0.4-0.5KW의 파워레벨로 스퍼터를 실시한다. 이렇게 하여 얻어지는 기판유리를 언로드챔버(6)으로 이동시켜 통상적인 방식대로 박막제작을 완료한다.Argon gas is injected into the
상기한, 본 발명의 실시예에 의하여 얻어지는 투명도전막을 더블 비임 인터페로미터로 투과도를 측정한 결과 0.3-0.8㎛의 파장영역에 걸쳐 90% 이상으로 나타났으며, 4-포인트 프로브로 전기적특성을 측정한 결과 1×10-3Ω-1Cm-1의 우수한 전도도가 나타났다.As a result of measuring the transmittance of the transparent conductive film obtained by the embodiment of the present invention with a double beam interferometer, it was found to be 90% or more over the wavelength region of 0.3-0.8 μm, and the electrical properties were measured with a 4-point probe. As a result, excellent conductivity of 1 × 10 −3 Ω −1 Cm −1 was observed.
또한, 본 발명에 의하여 얻어진 투명도전막을 표준압력 장치로 부착강도를 측정한 결과 0.3-0.3Kg/cm2의 부착강도가 나타나 종래 부착강도에 비해 2배 이상의 부착강도가 나타났다.In addition, as a result of measuring the adhesion strength of the transparent conductive film obtained by the present invention with a standard pressure device, the adhesion strength of 0.3-0.3Kg / cm 2 appeared, and the adhesion strength of the transparent conductive film obtained by the present invention was more than twice that of the conventional adhesion strength.
이와같이, 본 발명에 의하면, 투과도와 전도도가 양호하고, 특히 부착강도가 현저히 증대되므로 종래와 같은 백탁현상이나 흑화현상이 나타나는 결점을 해소할 수 있어서 균일한 품질의 박막을 얻을 수 있는 이점이 있다.As described above, according to the present invention, the permeability and conductivity are good, and in particular, the adhesion strength is significantly increased, so that the conventional defects such as whitening and blackening can be eliminated, thereby obtaining a thin film of uniform quality.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870014651A KR900004863B1 (en) | 1987-12-21 | 1987-12-21 | Production method of membrane of conduction of electricity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870014651A KR900004863B1 (en) | 1987-12-21 | 1987-12-21 | Production method of membrane of conduction of electricity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890010592A KR890010592A (en) | 1989-08-09 |
| KR900004863B1 true KR900004863B1 (en) | 1990-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870014651A KR900004863B1 (en) | 1987-12-21 | 1987-12-21 | Production method of membrane of conduction of electricity |
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| Country | Link |
|---|---|
| KR (1) | KR900004863B1 (en) |
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1987
- 1987-12-21 KR KR1019870014651A patent/KR900004863B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR890010592A (en) | 1989-08-09 |
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