JPH0377208A - Lowering electric resistance of tin oxide film - Google Patents
Lowering electric resistance of tin oxide filmInfo
- Publication number
- JPH0377208A JPH0377208A JP21395789A JP21395789A JPH0377208A JP H0377208 A JPH0377208 A JP H0377208A JP 21395789 A JP21395789 A JP 21395789A JP 21395789 A JP21395789 A JP 21395789A JP H0377208 A JPH0377208 A JP H0377208A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- tin oxide
- resistance
- anode
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001887 tin oxide Inorganic materials 0.000 title claims abstract description 40
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 abstract description 14
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000003513 alkali Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光起電力素子専の透明導ｉ換として使用され
る酸化スズ膜を低抵抗化する酸化スズ膜の低抵抗化方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for lowering the resistance of a tin oxide film used as a transparent dielectric for photovoltaic devices.
一般に、太陽電池等の光起電力素子の透明導電漠として
、例えば特開昭６２−２１３２８１号公報ＣＩ−Ｉ ０
１Ｌ３ｉ１０４）に記載のように酸化スズ膜がよく用い
られるが、この場合発生電力を効率よく外部に取り出す
には、酸化スズ膜を低抵抗化する必要がある。Generally, as a transparent conductive material for photovoltaic elements such as solar cells, for example, Japanese Patent Application Laid-Open No. 62-213281 CI-I 0
As described in 1L3i104), a tin oxide film is often used, but in this case, in order to efficiently extract the generated power to the outside, it is necessary to reduce the resistance of the tin oxide film.
そして従来、酸化スズ膜を低抵抗化する手法として、ガ
ラス基板に酸化スズ膜をＣＶＤ法等により形成する際に
、低抵抗化用のアンチモン［Ｓｂ］やフッ素［Ｆ］など
の不純物を含む反応ガス金柑い、模形成の過程で不純物
音ドープし、膜形戊後約５００℃の高温熱処理を行うこ
とによって酸化スズ摸を低抵抗化している。Conventionally, as a method for lowering the resistance of a tin oxide film, when forming a tin oxide film on a glass substrate by a CVD method, a reaction containing impurities such as antimony [Sb] and fluorine [F] to lower the resistance is used. The resistance of the tin oxide pattern is lowered by doping it with impurities during the process of forming the pattern, and then subjecting it to high-temperature heat treatment at approximately 500 degrees Celsius after forming the film.
従来の場合、酸化スズ膜の形成後に高温熱処理を行うた
め、約５００℃に加熱するための設備金要しこの設備が
２００〜３００℃の加熱設備に比べてかなり大１）かり
になり、しかも高温加熱によりガラス基板からのアルカ
リイオンが酸化スズ膜に入り込み、酸化スズ膜の膜抵抗
がアルカリイオンによって上昇し、酸化スズ膜を簡単に
かつ確実に低抵抗化できないという問題点がある。In the conventional case, high-temperature heat treatment is performed after the formation of the tin oxide film, which requires equipment for heating to approximately 500°C, which is considerably larger than heating equipment for 200 to 300°C. There is a problem that alkali ions from the glass substrate enter the tin oxide film due to heating, and the film resistance of the tin oxide film increases due to the alkali ions, making it impossible to easily and reliably reduce the resistance of the tin oxide film.
本発明は、前記の点に留意してなされ、簡単な方法によ
り確実に酸化スズ膜を低抵抗化できるようにすることを
目的とする。The present invention has been made with the above points in mind, and an object of the present invention is to make it possible to reliably lower the resistance of a tin oxide film by a simple method.
前記目的を遠戚するために、本発明は、酸化スズ膜上形
成した基板を真空容器内に配設し、前記容器内に低抵抗
化用不純物金倉むガスのプラズマ金生戚して前記不純物
を前記酸化スズ膜にドープし、前記酸化スズ膜を低抵抗
化することを特徴としている。In order to achieve the above-mentioned object, the present invention provides a method for disposing a substrate formed on a tin oxide film in a vacuum container, and generating plasma of a gas containing impurities for lowering resistance in the container. is doped into the tin oxide film to lower the resistance of the tin oxide film.
以上のような構成において、低抵抗化用不純物を含むガ
スのプラズマ中に、酸化スズ膜上形成した基板ごと晒す
ことにより、酸化スズ膜に不純物上ドープし、酸化スズ
膜を低抵抗化できるため、従来の如く高温熱処理を行う
場合のように大掛かりな設備が不要になり、膜抵抗が上
昇することもなく、簡単かつ確実に酸化スズ膜の低抵抗
化が図れる。In the above configuration, by exposing the substrate formed on the tin oxide film to a plasma of a gas containing impurities for lowering resistance, the tin oxide film is doped with impurities and the resistance of the tin oxide film can be lowered. This eliminates the need for large-scale equipment and increases the resistance of the tin oxide film as in the case of conventional high-temperature heat treatment, and the resistance of the tin oxide film can be easily and reliably lowered.
［実施例］ 実施例について第１図を参照して説明する。[Example] An embodiment will be described with reference to FIG.
同図は、低抵抗化するための装置の概略構成を示し、同
図にむいて、（１）は真空容器、（２）は容器（１）に
形成され低抵抗化不純物であるＦ’に含む４フツ化炭素
［ＣＦ、］ガスが導入される導入口、（３）は容器（１
１に形成された排気口、（４）は容器（１）内の下部に
配設されアースされたアノード、（５）は容器（１）内
の上部にアノード（４）に平行に配設されたカソード、
（６）はアノード（４）上に載置され上面に酸化スズ膜
（７）が形成されたガラス基板、（８）はＲ，Ｆ電源で
あり、端がマツチングボックスを介してカソード（５）
に接続され、他端がアースされており、アノード（４）
。The figure shows a schematic configuration of a device for lowering resistance. In the figure, (1) is a vacuum container, and (2) is F', which is formed in the container (1) and is a resistance lowering impurity. The inlet (3) through which carbon tetrafluoride [CF,] gas containing carbon is introduced is the container (1
(4) is an anode arranged at the lower part of the container (1) and is grounded; (5) is arranged at the upper part of the container (1) parallel to the anode (4); cathode,
(6) is a glass substrate placed on the anode (4) and has a tin oxide film (7) formed on its upper surface, (8) is an R, F power supply, and the end is connected to the cathode (5) through a matching box. )
and the other end is grounded, and the anode (4)
.
カソード（５）間にＲＦ ’ｔｔ圧を印加し、アノード
（４）、カソード（５）間にＲＦグロー放電を発生させ
て導入口（２）からのＣＦ、ガスをプラズマ化する。An RF 'tt pressure is applied between the cathode (5), an RF glow discharge is generated between the anode (4) and the cathode (5), and the CF and gas from the inlet (2) are turned into plasma.
ところで、酸化スズ膜（７）は、酸素雰囲気中で金属ス
ズを抵抗加熱にエリ基板（６）の表面に真空蒸着したの
ち、大気中において５５０℃で焼成して形成する。Incidentally, the tin oxide film (7) is formed by vacuum-depositing metal tin on the surface of the substrate (6) by resistance heating in an oxygen atmosphere, and then baking it at 550° C. in the atmosphere.
そして、真空容器（１）内のアノード（４）に、酸化ス
ズ膜（７） ′に形成した基板（６）ヲセットし、容器
（１）内を１０−’ Ｔｏｒｒまで真空排気したのち、
容器＜１１内の圧力が０．４ Ｔｏｒｒで一定となるよ
うに導入口（２）からＣＦ。Then, the substrate (6) formed on the tin oxide film (7)' was set on the anode (4) in the vacuum container (1), and the inside of the container (1) was evacuated to 10-' Torr.
CF from the inlet (2) so that the pressure inside the container <11 is constant at 0.4 Torr.
ガスを導入すると共に、排気口（３）より調整排気し、
ＲＦ 電源（８１Ｋ ｊ ＩＪ ２００Ｗ（Ｄ ＲＦ電
力金供給し、アノード（４）、カソード（５）間でＲＦ
グロー放電を発生させ、ＣＦ、ガスをプラズマ化する。At the same time as introducing gas, the gas is regulated and exhausted from the exhaust port (3),
RF power supply (81K j IJ 200W (D) RF power supply between anode (4) and cathode (5)
Glow discharge is generated to turn CF and gas into plasma.
このようにして生成さ：／’ＬｆｃＣＦ４ガスのプラズ
マスズ膜（７）が低抵抗化され、従来のような高温処理
のための大掛かりな設備が不要になり、高温に起因した
ガラス基板（６）からのアルカリイオンの入り込みによ
る膜抵抗の上昇のかそれがない。The plasma tin film (7) of LfcCF4 gas produced in this way has a low resistance, eliminating the need for large-scale equipment for conventional high-temperature processing, and eliminating the need for glass substrates (6) caused by high temperatures. This may be due to an increase in membrane resistance due to the entry of alkali ions from the membrane.
例えば、前記した条件で１５分間ＲＦグロー放電金継続
したところ、放電開始前には酸化スズ膜（７）の比抵抗
は４ Ｘ １０−’Ω・備であったが、放電により１桁
以上小さくなることが確認できた。For example, when an RF glow discharge was continued for 15 minutes under the conditions described above, the specific resistance of the tin oxide film (7) was 4 x 10-' ohms before the discharge started, but it decreased by more than an order of magnitude due to the discharge. I was able to confirm that this was the case.
なお、前記実施例ではＲＦグロー放電によりプラ発生す
るようにしてもよい。In the above embodiment, plastic may be generated by RF glow discharge.
また、導入ガスはドープする不純物に応じて適宜選定す
ればよい。Further, the introduced gas may be appropriately selected depending on the impurity to be doped.
本発明は、以上説明したように構成されているので、以
下に記載する効果金臭する。Since the present invention is configured as described above, it has the following effects.
低抵抗化不純物七含むガスのプラズマ中に、酸化スズ膜
を形成した基板ごと晒すことにエリ、酸化スズ膜に不純
物をドープし、酸化スズ膜を低抵抗化できるため、従来
の如く高温熱処理を行う場合のように大掛かりな設備が
不要になり、膜抵抗が上昇することもなく、簡単かつ確
実に酸化スズ膜の低抵抗化を行うことができる。By exposing the entire substrate on which the tin oxide film is formed to the plasma of a gas containing impurities, the tin oxide film can be doped with impurities and the resistance of the tin oxide film can be lowered. It is possible to easily and reliably reduce the resistance of the tin oxide film without requiring large-scale equipment and without increasing the film resistance.
【図面の簡単な説明】
第１図は本発明の酸化スズ膜の低抵抗化方法の１実施例
に訃ける低抵抗化装置の概略図である。
（１）・・・真空容器、（４）・・・アノード、（５）
・・・カソード、（６）・・・ガラス基板、（７）・−
・酸化スズ膜、（８）・・・ＲＦ電源。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a resistance lowering device which is an embodiment of the method of lowering the resistance of a tin oxide film according to the present invention. (1)...Vacuum vessel, (4)...Anode, (5)
... cathode, (6) ... glass substrate, (7) -
- Tin oxide film, (8)...RF power supply.
Claims (1)
、前記容器内に低抵抗化用不純物を含むガスのプラズマ
を生成して前記不純物を前記酸化スズ膜にドープし、前
記酸化スズ膜を低抵抗化することを特徴とする酸化スズ
膜の低抵抗化方法。(1) A substrate on which a tin oxide film is formed is placed in a vacuum container, a plasma of a gas containing impurities for lowering resistance is generated in the container, the impurity is doped into the tin oxide film, and the tin oxide film is doped with the impurity, and the tin oxide film is doped with the impurity. A method for lowering the resistance of a tin oxide film, characterized by lowering the resistance of a tin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21395789A JPH0377208A (en) | 1989-08-19 | 1989-08-19 | Lowering electric resistance of tin oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21395789A JPH0377208A (en) | 1989-08-19 | 1989-08-19 | Lowering electric resistance of tin oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0377208A true JPH0377208A (en) | 1991-04-02 |
Family
ID=16647859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21395789A Pending JPH0377208A (en) | 1989-08-19 | 1989-08-19 | Lowering electric resistance of tin oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0377208A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007068252A (en) * | 2005-08-29 | 2007-03-15 | Chugoku Electric Power Co Inc:The | Arm cover |
-
1989
- 1989-08-19 JP JP21395789A patent/JPH0377208A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007068252A (en) * | 2005-08-29 | 2007-03-15 | Chugoku Electric Power Co Inc:The | Arm cover |
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