KR900004053A - LiNbO₃단결정 성장방법 - Google Patents

LiNbO₃단결정 성장방법 Download PDF

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Publication number
KR900004053A
KR900004053A KR1019880011227A KR880011227A KR900004053A KR 900004053 A KR900004053 A KR 900004053A KR 1019880011227 A KR1019880011227 A KR 1019880011227A KR 880011227 A KR880011227 A KR 880011227A KR 900004053 A KR900004053 A KR 900004053A
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KR
South Korea
Prior art keywords
single crystal
growth method
crystal growth
linbo3 single
linbo
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Application number
KR1019880011227A
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English (en)
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KR920006204B1 (ko
Inventor
한재용
Original Assignee
한형수
삼성코닝 주식회사
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Priority to KR1019880011227A priority Critical patent/KR920006204B1/ko
Publication of KR900004053A publication Critical patent/KR900004053A/ko
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Publication of KR920006204B1 publication Critical patent/KR920006204B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.

Description

LiNbO3단결정 성장방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 Y축 방향으로 성장시킨 LiNbO3단결정을 도시한 것으로서, (a)는 단결정의 측면도이고, (b)는 횡단면도이다.
제2도는 LiNbO3단결정의 축방향별 온도에 대한 열팽창률을 도시한 그래프.

Claims (1)

  1. Y축 방향으로 성장시켜 LiNbO3단결정을 제조하는 방법에 있어서, 성장된 단결정을 냉각할때 800℃∼400℃의 온도구간에서는 50℃∼80℃/h의 냉각속도로 냉각시키고, 나머지 온도구간에서는 100℃ ∼150℃/h의 냉각속도로 냉각시켜 균열이 없는 결정을 얻도록 함을 특징으로 하는 LiNbO3단결정 성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880011227A 1988-08-31 1988-08-31 LiNbO₃단결정 성장방법 KR920006204B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880011227A KR920006204B1 (ko) 1988-08-31 1988-08-31 LiNbO₃단결정 성장방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880011227A KR920006204B1 (ko) 1988-08-31 1988-08-31 LiNbO₃단결정 성장방법

Publications (2)

Publication Number Publication Date
KR900004053A true KR900004053A (ko) 1990-03-27
KR920006204B1 KR920006204B1 (ko) 1992-08-01

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ID=19277383

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011227A KR920006204B1 (ko) 1988-08-31 1988-08-31 LiNbO₃단결정 성장방법

Country Status (1)

Country Link
KR (1) KR920006204B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492808B1 (ko) * 1999-05-22 2005-06-03 카가쿠키쥬쯔 신코지교단 고품질 단결정의 육성방법과 그 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492808B1 (ko) * 1999-05-22 2005-06-03 카가쿠키쥬쯔 신코지교단 고품질 단결정의 육성방법과 그 장치

Also Published As

Publication number Publication date
KR920006204B1 (ko) 1992-08-01

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