KR950018691A - 리튬 탄탈레이트 단결정 제조방법 - Google Patents

리튬 탄탈레이트 단결정 제조방법 Download PDF

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Publication number
KR950018691A
KR950018691A KR1019930027977A KR930027977A KR950018691A KR 950018691 A KR950018691 A KR 950018691A KR 1019930027977 A KR1019930027977 A KR 1019930027977A KR 930027977 A KR930027977 A KR 930027977A KR 950018691 A KR950018691 A KR 950018691A
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KR
South Korea
Prior art keywords
lithium tantalate
tantalate single
single crystals
single crystal
production method
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KR1019930027977A
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English (en)
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KR960005521B1 (ko
Inventor
정대식
박병학
노용래
Original Assignee
조말수
포항종합제철주식회사
백덕현
재단법인산업과학기술연구소
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Priority to KR1019930027977A priority Critical patent/KR960005521B1/ko
Publication of KR950018691A publication Critical patent/KR950018691A/ko
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Publication of KR960005521B1 publication Critical patent/KR960005521B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 리튬 탄탈레이트 단결정 제조방법에 관한 것이다.
이 방법은 이리듐(Ir) 도가니를 사용하여 쵸크랄스키법에 의해 리튬탄탈레이트 단결정을 성장시킬 때, 질소와 같은 불활성 분위기 가스에 산소를 불활성 가스 기준으로 약 0.01-0.2용량% 함유시킨 혼합가스 분위기하에서 리튬 탄탈레이트 단결정을 성장시킴으로써 도가니 손상이 없을 뿐 아니라 단결정이 착색되거나 크랙이 발생되지 않게 된다.
이 방법으로 제조된 성장된 리튬 탄탈레이트는 압전, 초전, 광학재료등 물리응용재료나 표면탄성과 소자용 기관으로 유용하게 사용될 수 있다.

Description

리튬 탄탈레이트 단결정 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이리듐(Ir) 도가니를 사용하는 쵸크랄 스키법에 의한 단결정 성장장치의 개략 단면도이다.

Claims (1)

  1. 이리듐(Ir) 도가니를 사용하여 쵸크랄스키법에 의해 리튬 탄탈레이트 단결정을 성장시키는 방법에 있어서, 대기압 상태에서 불활성분위기 가스에 산소(O2)를 불활성 분위기 가스기준으로 0.01-0.2용량% 함유시킨 혼합가스 분위기하에서 리튬 탄탈레이트 단결정을 성장시킴을 특징으로 하는 리튬 탄탈레이트 단결정 제조방법
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930027977A 1993-12-16 1993-12-16 리튬 탄탈레이트 단결정 제조방법 KR960005521B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930027977A KR960005521B1 (ko) 1993-12-16 1993-12-16 리튬 탄탈레이트 단결정 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930027977A KR960005521B1 (ko) 1993-12-16 1993-12-16 리튬 탄탈레이트 단결정 제조방법

Publications (2)

Publication Number Publication Date
KR950018691A true KR950018691A (ko) 1995-07-22
KR960005521B1 KR960005521B1 (ko) 1996-04-25

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Application Number Title Priority Date Filing Date
KR1019930027977A KR960005521B1 (ko) 1993-12-16 1993-12-16 리튬 탄탈레이트 단결정 제조방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6878865B2 (ja) * 2016-12-13 2021-06-02 住友金属鉱山株式会社 高周波誘導加熱炉のホットゾーン構造及びホットゾーン構造を用いた酸化物単結晶の育成方法

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KR960005521B1 (ko) 1996-04-25

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