KR900002401A - How to fill the access window using the lift-off process - Google Patents

How to fill the access window using the lift-off process Download PDF

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Publication number
KR900002401A
KR900002401A KR1019880009159A KR880009159A KR900002401A KR 900002401 A KR900002401 A KR 900002401A KR 1019880009159 A KR1019880009159 A KR 1019880009159A KR 880009159 A KR880009159 A KR 880009159A KR 900002401 A KR900002401 A KR 900002401A
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KR
South Korea
Prior art keywords
layer
window
lift
metal
intermediate layer
Prior art date
Application number
KR1019880009159A
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Korean (ko)
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KR910006745B1 (en
Inventor
박한수
Original Assignee
강진구
삼성반도체통신 주식회사
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Priority to KR1019880009159A priority Critical patent/KR910006745B1/en
Publication of KR900002401A publication Critical patent/KR900002401A/en
Application granted granted Critical
Publication of KR910006745B1 publication Critical patent/KR910006745B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.No content.

Description

[리프트오프 공정을 사용한 접속창 채움방법][Filling Connection Window Using Lift-Off Process]

[도면의 간단한 설명][Brief Description of Drawings]

제2도는 본 발명에 의하여 접속창을 형성한 후 금속을 채우는 순서를 나타낸 공정도이다.제2 is a process chart showing a procedure of filling a metal after forming a connection window according to the present invention.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

다층 포토리스트 및 리프트오프 공정을 사용하여 균일한 접속창의 형성과 그 접속창에 금속을 채우는 연결방법에 있어서, 굴곡이 형성된 부도체층(6)위에 평탄화층(11) 및 중간층(12)을 형성시키는 공정과, 중간층(12)위에 포토리지스트(13)층을 도포하여 접속창 패턴을 형성시키는 공정과, 상기 패턴을 따라 중간층(12) 및 평탄화층(11)을 식각시켜 접속창을 형성시키는 공정과, 포토리지스트(13)층 제거후 금속층(14)을 다중도포하는 공정과, 상기 평탄화층(11), 중간층(12), 중간층위의 금속(14)을 리프트오프 방법으로 제거시키는 공정과, 상기 부도체층(6) 및 금속(14)이 채워진 접속창위에 금속(15)을 도포시키는 공정으로된 리프트오프 공정을 사용한 접속창 채움방법.In the method of forming a uniform connection window and a metal filling method for the connection window using a multilayer photolist and a lift-off process, the planarization layer 11 and the intermediate layer 12 are formed on the insulator layer 6 on which the bending is formed. Forming a connection window pattern by applying a layer of photoresist 13 on the intermediate layer 12; and forming a connection window by etching the intermediate layer 12 and the planarization layer 11 along the pattern. And multi-coating the metal layer 14 after removing the photoresist layer 13, removing the planarization layer 11, the intermediate layer 12, and the metal 14 on the intermediate layer by a lift-off method. And a method of filling a splice window using a lift-off process in which a metal (15) is applied onto the splice window filled with the insulator layer (6) and the metal (14). 2. 제1항에 있어서, 상기 패턴을 따라 중간층(12) 및 평탄화층(11)을 식각시켜 접속창을 형성시키는 공정은 반응성 이온에칭(Reactive Ion Etching)공정으로 정밀도를 요하는 식각을 하여 접속창에 매몰될 금속층이 일정한 두께로 유지될 수 있게한 리프트오프 공정을 사용한 접속창 채움방법.2. The process according to claim 1, wherein the step of forming the connection window by etching the intermediate layer 12 and the planarization layer 11 along the pattern is performed by etching which requires precision by a reactive ion etching process. A method of filling a splice window using a lift-off process that allows a metal layer to be buried in a window to be maintained at a constant thickness. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880009159A 1988-07-21 1988-07-21 Contact window filling - up method KR910006745B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880009159A KR910006745B1 (en) 1988-07-21 1988-07-21 Contact window filling - up method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880009159A KR910006745B1 (en) 1988-07-21 1988-07-21 Contact window filling - up method

Publications (2)

Publication Number Publication Date
KR900002401A true KR900002401A (en) 1990-02-28
KR910006745B1 KR910006745B1 (en) 1991-09-02

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ID=19276288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880009159A KR910006745B1 (en) 1988-07-21 1988-07-21 Contact window filling - up method

Country Status (1)

Country Link
KR (1) KR910006745B1 (en)

Also Published As

Publication number Publication date
KR910006745B1 (en) 1991-09-02

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