KR900001018A - 고체 전자소자 - Google Patents

고체 전자소자

Info

Publication number
KR900001018A
KR900001018A KR1019890007395A KR890007395A KR900001018A KR 900001018 A KR900001018 A KR 900001018A KR 1019890007395 A KR1019890007395 A KR 1019890007395A KR 890007395 A KR890007395 A KR 890007395A KR 900001018 A KR900001018 A KR 900001018A
Authority
KR
South Korea
Prior art keywords
solid state
state electronics
electronics
solid
state
Prior art date
Application number
KR1019890007395A
Other languages
English (en)
Other versions
KR930000882B1 (ko
Inventor
히또시 와따나베
노리오 호사까
아끼쯔나 유하라
쥰 야마다
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR900001018A publication Critical patent/KR900001018A/ko
Application granted granted Critical
Publication of KR930000882B1 publication Critical patent/KR930000882B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/36—Devices for manipulating acoustic surface waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1019890007395A 1988-06-01 1989-05-31 고체 전자소자 KR930000882B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-132686 1988-06-01
JP63132686A JPH01303910A (ja) 1988-06-01 1988-06-01 固体電子素子、その製造方法、及びそれを利用した装置

Publications (2)

Publication Number Publication Date
KR900001018A true KR900001018A (ko) 1990-01-31
KR930000882B1 KR930000882B1 (ko) 1993-02-08

Family

ID=15087155

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007395A KR930000882B1 (ko) 1988-06-01 1989-05-31 고체 전자소자

Country Status (4)

Country Link
US (1) US4942327A (ko)
JP (1) JPH01303910A (ko)
KR (1) KR930000882B1 (ko)
DE (1) DE3917731A1 (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162690A (en) * 1989-04-14 1992-11-10 Murata Manufacturing Co., Ltd. Surface acoustic wave device
JPH0340510A (ja) * 1989-07-06 1991-02-21 Murata Mfg Co Ltd 弾性表面波装置
JPH0382922U (ko) * 1989-12-12 1991-08-23
US5389806A (en) * 1990-09-04 1995-02-14 Motorola, Inc. Apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements
US5497140A (en) * 1992-08-12 1996-03-05 Micron Technology, Inc. Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US6045652A (en) * 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5779839A (en) * 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
DE4319878A1 (de) * 1992-06-17 1993-12-23 Micron Technology Inc Hochfrequenz-Identifikationseinrichtung (HFID) und Verfahren zu ihrer Herstellung
USRE42773E1 (en) 1992-06-17 2011-10-04 Round Rock Research, Llc Method of manufacturing an enclosed transceiver
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US7158031B2 (en) 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
JP3379049B2 (ja) * 1993-10-27 2003-02-17 富士通株式会社 表面弾性波素子とその製造方法
JPH09223944A (ja) * 1995-12-13 1997-08-26 Fujitsu Ltd 弾性表面波素子及びその製造方法
US5988510A (en) * 1997-02-13 1999-11-23 Micron Communications, Inc. Tamper resistant smart card and method of protecting data in a smart card
US6075278A (en) * 1997-04-24 2000-06-13 Micron Technology, Inc. Aluminum based alloy bridge structure and method of forming same
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
JPH1174751A (ja) * 1997-08-28 1999-03-16 Murata Mfg Co Ltd 弾性表面波装置
US6273339B1 (en) 1999-08-30 2001-08-14 Micron Technology, Inc. Tamper resistant smart card and method of protecting data in a smart card
JP3338010B2 (ja) * 1999-10-18 2002-10-28 富士通株式会社 弾性表面波素子及びその製造方法
US6965190B2 (en) * 2001-09-12 2005-11-15 Sanyo Electric Co., Ltd. Surface acoustic wave device
KR100706317B1 (ko) * 2005-01-28 2007-04-13 엘지전자 주식회사 표면 탄성파 선형 모터, 표면 탄성파 선형 모터 패키지 및이를 이용한 렌즈 구동기
DE102009045184B4 (de) * 2009-09-30 2019-03-14 Infineon Technologies Ag Bondverbindung zwischen einem Bonddraht und einem Leistungshalbleiterchip

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839515A (en) * 1972-04-26 1974-10-01 Koppers Co Inc Shaped articles of isotropic carbon and a method for making the same
JPS50159259A (ko) * 1974-06-12 1975-12-23
JPS53143167A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Insb polycrystalline thin film element
JPS594310A (ja) * 1982-06-30 1984-01-11 Toshiba Corp 弾性表面波装置
JPS60257166A (ja) * 1984-06-01 1985-12-18 Hitachi Ltd 半導体装置
GB2186456B (en) * 1986-01-13 1989-11-08 Hitachi Ltd Surface acoustic wave device
JPS62272610A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 弾性表面波素子

Also Published As

Publication number Publication date
US4942327A (en) 1990-07-17
JPH01303910A (ja) 1989-12-07
DE3917731A1 (de) 1989-12-07
KR930000882B1 (ko) 1993-02-08

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee