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Priority to KR1019880004978ApriorityCriticalpatent/KR890016681A/en
Publication of KR890016681ApublicationCriticalpatent/KR890016681A/en
Ⅰ2L디지탈 소자 제조방법Ⅰ2L digital device manufacturing method
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2 도는 본 발명에 따른 디지탈소자 제조공정도.2 is a process diagram of manufacturing a digital device according to the present invention.
Claims (1)
기판(1)위의 산화층(2)에 매설층(3)을 형성하고 인(P)을 주입한 후 에픽텍셜층(4)을 성장시키고, 이를 이온화하여 베이스층과 에미터층을 형성하도록 한 것을 포함하는 디지탈소자 제조공정에 있어서, 산화층(2)에 형성된 매설층(3)에서 에픽텍셜층(4)을 성장하여 이온화공정(Iso)을 진행한 후 인(P)을 주입하여 베이스층(B)과 에미터층(E)을 형성하도록 한 것을 특징으로 하는 I2L 디지탈 소자 제조방법.After the buried layer 3 was formed on the oxide layer 2 on the substrate 1 and phosphorus (P) was injected, the epitaxial layer 4 was grown, and ionized to form a base layer and an emitter layer. In the manufacturing process of a digital device comprising a, the epitaxial layer (4) is grown in the buried layer (3) formed in the oxide layer (2), the ionization process (Iso) is carried out, and then phosphorus (P) is injected to the base layer (B). ) and I 2 L digital device manufacturing method, characterized in that to form the emitter layer (E).※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880004978A1988-04-301988-04-30
I ^ 2L digital device manufacturing method
KR890016681A
(en)