KR890016024A - 트리아진 제초제, 이들의 제조 및 사용 - Google Patents

트리아진 제초제, 이들의 제조 및 사용 Download PDF

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KR890016024A
KR890016024A KR1019890004479A KR890004479A KR890016024A KR 890016024 A KR890016024 A KR 890016024A KR 1019890004479 A KR1019890004479 A KR 1019890004479A KR 890004479 A KR890004479 A KR 890004479A KR 890016024 A KR890016024 A KR 890016024A
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alkylthio
alkoxy
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윌리엄 뉴튼 트레버
머카서 앨러스테어
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오노 알버어스
셀 인터나쵸나아레 레사아치 마아츠샤피 비이부이
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Abstract

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Description

트리아진 제초제, 이들의 제조 및 사용
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 적어도 한개의 담체와 함께 하기 일반 구조식 I의 화합물 또는 같은 양의 무기 또는 유기 양이온을 갖는 일반 구조식 I의 화합물의 카르복실산염을 포함하는 제초제 조성물 :
    상기식에서 R1및 R2는 각각 독립적으로 수소 또는 할로겐 원자, 또는 임의 치환된 알킬, 알케닐, 알키닐, 시클로알킬, 알콕시, 알케닐옥시, 알키닐옥시, 아릴옥시, 알킬티오, 알케닐티오, 알키닐티오, 아릴티오 또는 아미노기 또는 포르밀, 임의 치환된 알킬 카르보닐, 시아노, 카르복시, 임의 치환된 알콕시카르보닐, 디알킬아민옥시, 디알킬이민옥시 또는 아지도기이며 ; X는 산소 또는 황 원자 또는 기- -SO2-, -SO-, 또는 -NR4(여기서 R4는 수소원자 또는 임의 치환된 알킬기임)이며 ;n은 1 내지 4의 정수이며 ; Y는 수소원자이거나 각 Y는 각각 독립적으로 할로겐 원자, 히드록시기 또는 임의 치환된 알킬, 알케닐, 알키닐, 아릴, 알콕시, 알케닐옥시, 알키닐옥시, 아릴옥시, 헤테로시클릴 옥시, 알킬티오, 알케닐 리오, 알키닐티오, 아릴티오 또는 아미노기 또는 포르밀, 임의 치환된 알킬카르보닐, 시아노 또는 니트로기이며, 또는 n이 적어도 2일때, 두개의 기 Y는 결합되어 융합된 포화 또는 불포화 카르보시클릭 또는 헤테로시클릭 고리를 형성하며 ; Z는 히드록시알킬, 히드록시벤질 또는 모노-, 디 - 또는 트리알콕시알킬기, 기 - CH=NOH, 또는 임으로 에스테르화된 카르복시알킬기 또는 기 COR3이며 여기서, R3는 수소 또는 할로겐 원자 또는 히드록시기 또는 임의 치환된 알킬, 아릴, 알케닐,알키닐, 알콕시, 알케닐옥시, 알키닐옥시, 시클로알킬옥시, 아릴옥시, 디알킬아민옥시, 디알킬이민옥시, 아미노, 알킬티오, 아릴티오, 알케닐티오 또는 알키닐티오기이며, 또는 R3은 기-OR5여기서 R5는 임의 치환된 헤테로시콜릭 고리임)이다.
  2. 제 1 항에 있어서, R1및 R2가 각각 독립적으로 임의 치환된, C1-4알킬, C2-4알케닐, C1-4알키닐기, C1-4알콕시기, C2-4알케닐옥시, C2-4알키닐옥시, C2-4알킬티오기, C2-4알케닐티오, C2-4알키닐티오, 치환된 아미노기 및 디(C1-4)알킬아민옥시기로부터 선택되는 조성물.
  3. 제 1 항 또는 제 2 항에 있어서, X가 산소 또는 황 원자를 나타내는 조성물.
  4. 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, Z가 기 COR3(여기서 R3는 수소원자, 히드록시기 또는 임의 치환된 C1-4알콕시, C2-4알케닐옥시, C2-4알키닐옥시, C1-4알킬티오, C2-4알케닐티오, C2-4알키닐티오, 펜(C1-4)알콕시, 펜(C1-4)알킬티오, 페녹시, 페닐티오 또는 디(C1-4) 알킬이민옥시기 임)을 나타내는 조성물.
  5. 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,n이 1이며 Y는 수소 또는 할로겐 원자 또는 임의 치환된 C1-4알킬, C2-4알케닐, C2-4알키닐, 페녹시, 페닐티오, 펜(C1-4알콕시, 펜(C1-4)알킬티오기, 니트로 또는 시아노기 또는 아미노 또는 치환된 아미노기인 조성물.
  6. 제 1 항 내지 제 5 항 중 어느 한 항에 있어서, 일반 구조식I의 화합물이 카르복실산 염 형태인 조성물.
  7. 염기조건하에 하기 일반구조식(II)의 화합물을 하기 일반 구조식 III의 화합물과 반응시키고, 원한다면, 일반 구조식 I의 화합물을 일반구조식 I의 또 다른 화합물로 전환시키거나, 일반 구조식 I의 카르복실산을 이들의 염으로 전환시키거나 알반 구조식 I화합물의 카르복실산 염을 산 형태 또는 또 다른 염으로 전환시키는 것을 포함하는, 제 1 항 내지 제 6항 중 어느 한 항에 정의된 일반 구조식 I의 화합물의 제조 방법:
    상기식에서 R1및 R2는 각각 독립적으로 수소 또는 할로겐 원자, 또는 임의 치환된 알킬, 알케닐, 알키닐, 시클로알킬, 알콕시, 알케닐옥시, 알키닐옥시, 아릴옥시, 알킬티오, 알케닐티오, 알키닐티오, 아릴티오 또는 아미노기 또는 포르밀, 임의 치환된 알킬 카르보닐, 시아노, 카르복시, 임의 치환된 알콕시카르보닐, 디알킬아민옥시, 디알킬이민옥시 또는 아지도기이며 ; X는 산소 또는 황 원자 또는 기- -SO2-, -SO-, 또는 -NR4-(여기서 R4는 수소원자 또는 임의 치환된 알킬기임)이며 ; n은 1 내지 4의 정수이며 ; Y는 수소원자이거나 각 Y는 각각 독립적으로 할로겐 원자, 히드록시기 또는 임의 치환된 알킬, 알케닐, 알키닐, 아릴, 알콕시, 알케닐옥시, 아키닐옥시, 아릴옥시, 헤테로시클릴옥시, 알킬티오, 알케닐티오, 알키닐티오, 아릴티오 또는 아미노기 또는 포르밀, 임의 치환된 알킬카르보닐, 시아노 또는 니트로기이며, 또는 n이 적어도 2일때, 두개의 기 Y는 결합되어 융합된 포화 또는 불포화 카르보시클릭 또는 헤테로시클릭 고리를 형성하며 ; Z는 히드록시알킬, 히드록시벤질 또는 모노-, 디 - 또는 트리알콕시알킬기, 기 - CH=NOH, 또는 임의로 에스테르화된 카르복시알킬기 또는 기 COR3이며 여기서 R3는 수소 또는 할로겐 원자 또는 히드록시기 또는 임의 치환된 알킬, 아릴, 알케닐, 알키닐, 알콕시, 알케닐옥시, 알키닐옥시, 시클로알킬옥시, 아릴옥시, 디알킬아민옥시, 디알킬이민옥시, 아미노, 알킬티오, 아릴티오, 알케닐티오 또는 알키닐티오기이며 또는 R3은 기 -OR5(여기서 R|5는 임의 치환된 헤테로시클릭 고리임)이며 L은 이탈기를 나타낸다.
  8. 하기 일반 구조식 I의 화합물:
    상기식에서 R1및 R2는 각각 독립적으로 수소 또는 할로겐 원자, 또는 임의 치환된 알킬, 알케닐, 알키닐, 시클로알킬, 알콕시, 알케닐옥시, 알키닐옥시, 아릴옥시, 알킬티오, 알케닐티오, 알키닐티오, 아릴티오, 또는 아미노기 또는 포르밀, 임의 치환된 알킬 카르보닐, 시아노 카르복시, 임의 치환된 알콕시카르보닐, 디알킬아민옥시, 디알킬이민옥시 또는 아지도기이며 ; X는 산소 또는 황원자 또는 기- -SO2-, -SO-, 또는 -NR4-(여기서 R4는 수소원자 또는 임의 치환된 알킬기임)이며 ; n은 1 내지 4의 정수이며 ; Y는 수소원자이거나 각 Y는 각각 독립적으로 할로겐 원자, 히드록시기 또는 임의 치환된 알킬, 알케닐, 알키닐, 아릴, 알콕시, 알케닐옥시, 알키닐옥시, 아릴옥시, 헤테로시클릴옥시, 알킬티오, 알케닐티오, 알키닐티오, 아릴티오 또는 아미노기 또는 포르밀, 임의 치환된 알킬카르보닐, 시아노 또는 니트로기이며, 또는 n이 적어도 2일때, 두개의 기 Y는 결합되어 융합된 포화 또는 불포화 카르보시클릭 또는 헤테로시클릭 고리를 형성하며 ; Z는 히드록시알킬, 히드록시벤질 또는 모노-, 디 - 또는 트리알콕시알킬기, 기 - CH=NOH 또는 임의로 에스테르화된 카르복시알킬기 또는 기 COR3이며 여기서 R3는 수소 또는 할로겐 원자 또는 히드록시 기 또는 임의 치환된 알킬, 아릴, 알케닐, 알키닐, 알콕시, 알케닐옥시, 알키닐옥시, 시클로알킬옥시, 아릴옥시, 디알킬아민옥시, 디알킬이민옥시, 아미노, 알킬티오, 아릴티오, 알케닐티오 또는 알키닐티오기이며, 또는 R3은 기 -OR5(여기서 R5는 임의 치환된 헤테로시클릭 고리 임)이며 단, R1이 4-클로로아닐리노기일때 R2는 치환된 아미노기가 아니다.
  9. 원하지 않는 식물 성장을 억제하는데 제 1 항 내지 제 6 항 중 어느 한 항에 청구된 조성물 또는 제 8 항에 청구된 화합물의 사용.
  10. 제 1 항 내지 제 6 항 중 어느 한 중에 청구된 조성물 또는 제 8 항에 청구된 화합물로 지역을 처리함으로써 그 지역에서 원하지 않는 식물 성장을 억제하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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