KR890004982A - 알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 필름을 제조하는 방법 - Google Patents

알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 필름을 제조하는 방법 Download PDF

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KR890004982A
KR890004982A KR1019880011954A KR880011954A KR890004982A KR 890004982 A KR890004982 A KR 890004982A KR 1019880011954 A KR1019880011954 A KR 1019880011954A KR 880011954 A KR880011954 A KR 880011954A KR 890004982 A KR890004982 A KR 890004982A
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South Korea
Prior art keywords
aluminum
aluminum iodide
iodide
evaporation
nitride film
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KR1019880011954A
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English (en)
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페터스 디터
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호르스트 란쯔, 로베르트 퀙크
훽스트 아크티엔게젤샤프트
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Publication of KR890004982A publication Critical patent/KR890004982A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Ceramic Products (AREA)

Abstract

내용 없음

Description

알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 필름을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1에 따라 제조한 질화 알루미늄 필름 X선 사진이다(002 및 103 반사만을 X선 사진으로 볼수 있다).
제2도는 실시예 1에 따라 제조한 질화 알루미늄 필름의 X선 도면이다(X선 도면의 구조는 단결정의 C축이 필름축에 대해 수직이라는 것을 나타낸다).

Claims (8)

  1. 질화 알루미늄이 단결정으로 이루어져 있고, 알루미늄 요오다이드의 암민염을 증발 영역으로 증발시킨 후, 계속해서 380 내지 550℃의 분해 영역에서 가암모니아 분해 시킴으로써, 투명한 질화 알루미늄 필름을 제조하는 방법.
  2. 제1항에 있어서, 가암모니아 분해용으로 사용되는 출발물질이 헥사암민알루미늄 요오다이드, 펜타암민 알루미늄 요오다이드 또는 헥사암민알루미늄 요오다이드 모노암모니에이트인 방법.
  3. 제1항에 있어서, 알루미늄 요오다이드의 암민 염을, 산소 및 물이 존재하지 않는 담체 개스를 사용하여 증발 영역에서 분해 영역으로 이동시키는 방법.
  4. 제3항에 있어서, 사용되는 담체 개스가 암모니아, 영족 개스, 질소, 수소 또는 이들의 혼합물인 방법.
  5. 제1항에 있어서, 증발 및 분해 영역을 0.01 내지 3bar의 압력에서 작동시키고, 증발영역을 250 내지 380℃의 온도에서 유지시키는 방법.
  6. 제1항에 있어서, 암모니아를 200 내지 380℃의 온도에서 알루미늄 요오다이드상으로 통과시킴으로써 증발 영역에서 알루미늄 요오다이드의 암민염을 형성시키고, 담체 개스로서 과량의 암모니아를 사용하여 알루미늄 요오다이드의 암민염을 분해 영역으로 이동시키는 방법.
  7. 제1항에 있어서, 질화 알루미늄 필름이 분해 영역으로서 가열된 석영 표면상에 단결정으로 용착되는 방법.
  8. 두께가 20μm 이하이고, 표면 조도가 0.3μm미만이며, C결정축이 필름면에 대해 수직인, 투명한 단결 정성 질화 알루미늄 필름.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880011954A 1987-09-18 1988-09-16 알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 필름을 제조하는 방법 KR890004982A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873731455 DE3731455A1 (de) 1987-09-18 1987-09-18 Verfahren zur herstellung von transparenten aluminiumnitrid-folien sowie -beschichtungen aus amminsalzen des aluminiumjodids
DEP3731455.6 1987-09-18

Publications (1)

Publication Number Publication Date
KR890004982A true KR890004982A (ko) 1989-05-11

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ID=6336350

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019880011955A KR890005298A (ko) 1987-09-18 1988-09-16 알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 피복물을 제조하는 방법
KR1019880011954A KR890004982A (ko) 1987-09-18 1988-09-16 알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 필름을 제조하는 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019880011955A KR890005298A (ko) 1987-09-18 1988-09-16 알루미늄 요오다이드의 암민염으로부터 투명한 질화 알루미늄 피복물을 제조하는 방법

Country Status (6)

Country Link
US (2) US4882135A (ko)
EP (1) EP0307682B1 (ko)
JP (1) JPH01100097A (ko)
KR (2) KR890005298A (ko)
AT (1) ATE82777T1 (ko)
DE (2) DE3731455A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573742A (en) * 1987-10-29 1996-11-12 Martin Marietta Corporation Method for the preparation of high purity aluminum nitride

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565704A (en) * 1967-12-19 1971-02-23 Westinghouse Electric Corp Aluminum nitride films and processes for producing the same
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4172754A (en) * 1978-07-17 1979-10-30 National Research Development Corporation Synthesis of aluminum nitride

Also Published As

Publication number Publication date
DE3731455A1 (de) 1989-03-30
US4882135A (en) 1989-11-21
EP0307682A3 (en) 1990-10-10
DE3876187D1 (de) 1993-01-07
JPH01100097A (ja) 1989-04-18
EP0307682A2 (de) 1989-03-22
US4882136A (en) 1989-11-21
EP0307682B1 (de) 1992-11-25
KR890005298A (ko) 1989-05-13
ATE82777T1 (de) 1992-12-15

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