KR880008417A - 반도체결정의 이온주입 선량(線量)을 측정하는 방법 및 장치 - Google Patents

반도체결정의 이온주입 선량(線量)을 측정하는 방법 및 장치 Download PDF

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Publication number
KR880008417A
KR880008417A KR870010951A KR870010951A KR880008417A KR 880008417 A KR880008417 A KR 880008417A KR 870010951 A KR870010951 A KR 870010951A KR 870010951 A KR870010951 A KR 870010951A KR 880008417 A KR880008417 A KR 880008417A
Authority
KR
South Korea
Prior art keywords
semiconductor crystal
fundamental wavelength
light energy
harmonic
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR870010951A
Other languages
English (en)
Korean (ko)
Inventor
로렌스 봄 백 존
빅터 제임스 존
첸딩 왕 찰즈
Original Assignee
원본미기재
포오드 모우터 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 포오드 모우터 캄파니 filed Critical 원본미기재
Publication of KR880008417A publication Critical patent/KR880008417A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nonlinear Science (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Biochemistry (AREA)
  • Optics & Photonics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Radiation (AREA)
KR870010951A 1986-12-02 1987-09-30 반도체결정의 이온주입 선량(線量)을 측정하는 방법 및 장치 Withdrawn KR880008417A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US937158 1986-12-02
US06/937,158 US4755049A (en) 1986-12-02 1986-12-02 Method and apparatus for measuring the ion implant dosage in a semiconductor crystal

Publications (1)

Publication Number Publication Date
KR880008417A true KR880008417A (ko) 1988-08-31

Family

ID=25469577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870010951A Withdrawn KR880008417A (ko) 1986-12-02 1987-09-30 반도체결정의 이온주입 선량(線量)을 측정하는 방법 및 장치

Country Status (4)

Country Link
US (1) US4755049A (https=)
JP (1) JPS63151042A (https=)
KR (1) KR880008417A (https=)
CA (1) CA1262291A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074669A (en) * 1989-12-12 1991-12-24 Therma-Wave, Inc. Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5185273A (en) * 1991-09-30 1993-02-09 Motorola, Inc. Method for measuring ions implanted into a semiconductor substrate
TW394977B (en) * 1998-04-21 2000-06-21 United Microelectronics Corp A recycle method for the monitor control chip
US7029933B2 (en) * 2004-06-22 2006-04-18 Tech Semiconductor Singapore Pte. Ltd. Method for monitoring ion implant doses
US7250313B2 (en) * 2004-09-30 2007-07-31 Solid State Measurements, Inc. Method of detecting un-annealed ion implants
KR100699889B1 (ko) * 2005-12-29 2007-03-28 삼성전자주식회사 가변적인 이온주입 조건이 수반되는 반도체 소자의 제조방법
US8415620B2 (en) * 2010-01-11 2013-04-09 International Business Machines Corporation Determining doping type and level in semiconducting nanostructures
US8581204B2 (en) 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
US10019565B2 (en) 2015-12-17 2018-07-10 Honeywell Federal Manufacturing & Technologies, Llc Method of authenticating integrated circuits using optical characteristics of physically unclonable functions
US11041827B2 (en) * 2019-04-12 2021-06-22 International Business Machines Corporation Carrier-resolved photo-hall system and method

Also Published As

Publication number Publication date
US4755049A (en) 1988-07-05
JPS63151042A (ja) 1988-06-23
CA1262291A (en) 1989-10-10
JPH0318340B2 (https=) 1991-03-12

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000