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Application filed by 임경춘, 삼성전자부품 주식회사filedCritical임경춘
Priority to KR1019860007260ApriorityCriticalpatent/KR880003442A/en
Publication of KR880003442ApublicationCriticalpatent/KR880003442A/en
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 종래의 태양전지 단면도,1 is a cross-sectional view of a conventional solar cell,
제2도는 본 발명의 따른 태양전지의 단면도이다.2 is a cross-sectional view of a solar cell according to the present invention.
Claims (1)
n형 반도체 상단에 p형 반도체를 증착법에 의해 진공 중착시킨 p-n접합형 태양전지에 있어서, 상기 n형반도체 상면에다 광파장대에 따라 응답도가 서로 다른 다수의 이종 p형 반도체(4)들을 단일층내에 함께 진공증착시켜 놓은 것을 특징으로 하는 광대역 태양전지.In a pn junction type solar cell in which a p-type semiconductor is vacuum-deposited on top of an n-type semiconductor by a vapor deposition method, a plurality of heterogeneous p-type semiconductors 4 having different responsiveness depending on an optical wavelength band are formed on the n-type semiconductor surface. A broadband solar cell, wherein vacuum deposition is carried out together.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860007260A1986-08-301986-08-30
Broadband solar cell
KR880003442A
(en)