KR870011625A - 스퍼터 코우팅 장치의 타켓 - Google Patents

스퍼터 코우팅 장치의 타켓 Download PDF

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Publication number
KR870011625A
KR870011625A KR1019860008693A KR860008693A KR870011625A KR 870011625 A KR870011625 A KR 870011625A KR 1019860008693 A KR1019860008693 A KR 1019860008693A KR 860008693 A KR860008693 A KR 860008693A KR 870011625 A KR870011625 A KR 870011625A
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KR
South Korea
Prior art keywords
target
cathode
sputter
coating device
perimeter
Prior art date
Application number
KR1019860008693A
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English (en)
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KR940006206B1 (ko
Inventor
다니엘 글래서 앨버트
Original Assignee
디. 엘. 트레자이스
웨스팅하우스 일렉트릭 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 디. 엘. 트레자이스, 웨스팅하우스 일렉트릭 코오포레이숀 filed Critical 디. 엘. 트레자이스
Publication of KR870011625A publication Critical patent/KR870011625A/ko
Application granted granted Critical
Publication of KR940006206B1 publication Critical patent/KR940006206B1/ko

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21C—NUCLEAR REACTORS
    • G21C11/00—Shielding structurally associated with the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/30—Nuclear fission reactors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

스퍼터 코우팅 장치의 타켓
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 외측 표면과 그위에 설치된 스퍼터 타켓 물질을 갖는 음극과, 음극에 연결되었으며 그와 간격진 관계로 설치되어 이들 사이에 음극과 접지 차폐체를 서로 분리시키는 갭을 규정하는 접지 차폐체로 구성되는 스퍼터 코우팅 장치의 타켓에 있어서,
    상기 갭(96)은 절연 물질(102)로 완전히 채워지는 것을 특징으로 하는 스퍼터 코우팅 장치의 타켓.
  2. 제 1 항에 있어서,
    상기 절연물질(102)은 세라믹 절연체인 것을 특징으로 하는 타켓.
  3. 제 2 항에 있어서,
    상기 세라믹 절연체는 산화 알루미늄으로 구성되는 것을 특징으로 하는 타켓.
  4. 제 1 항, 2 항 또는 3항에 있어서,
    음극(56)은 그 외측표면(60)의 주연부(66)상에 주연부(66)를 지나 외측으로 뻗어 있으며 간격진 관계로 접지 차폐체(84)의 인접연부(86)와 갭(96)위에 걸쳐져 있는 연속 주변 래지(94)를 형성하는 장치(90)를 설치하고 있는 것을 특징으로 하는 타켓.
  5. 제 4 항에 있어서,
    상기 래지(94)를 형성하는 장치(90)는 상기 주연부(66)위에서 음극(56)의 외측 표면(60)주위에 뻗어 있는 스트립의 배열로 구성되는 것을 특징으로 하는 타켓.
  6. 제 5 항에 있어서,
    스퍼터 타켓물질(58)은 스퍼터 타켓 물질을 둘러싸고 있으며 음극(56)의 외측 표면(60)의 주연부(66)상에서 지지되는 유지체(65)에 연결되어 있으며, 상기 스트립(90)은 유지체(65)에 고착되어 있는 것을 특징으로 하는 타켓.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860008693A 1986-05-01 1986-10-16 스퍼터 코우팅 장치의 타켓 KR940006206B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/858,325 US4661233A (en) 1985-07-05 1986-05-01 Cathode/ground shield arrangement in a sputter coating apparatus
US858325 1986-05-01

Publications (2)

Publication Number Publication Date
KR870011625A true KR870011625A (ko) 1987-12-24
KR940006206B1 KR940006206B1 (ko) 1994-07-11

Family

ID=25328045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860008693A KR940006206B1 (ko) 1986-05-01 1986-10-16 스퍼터 코우팅 장치의 타켓

Country Status (7)

Country Link
US (1) US4661233A (ko)
EP (1) EP0243556B1 (ko)
JP (1) JPS62260057A (ko)
KR (1) KR940006206B1 (ko)
CN (1) CN86107820A (ko)
DE (1) DE3688556T2 (ko)
ES (1) ES2004174A6 (ko)

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US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
US5280510A (en) * 1992-09-25 1994-01-18 Combuation Engineering, Inc. Microparticle coating on inside of fuel rods and other fuel assembly components
EP0954620A4 (en) 1997-01-16 2002-01-02 Bottomfield Layne F COMPONENTS FOR VACUUM EVAPORATION METALLIZATION AND RELATED METHODS
US7247035B2 (en) * 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US20070245553A1 (en) * 1999-05-27 2007-10-25 Chong Fu C Fine pitch microfabricated spring contact structure & method
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US6812718B1 (en) * 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7579848B2 (en) * 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
DE10045544C2 (de) * 2000-09-07 2002-09-12 Siemens Ag Verfahren zum Aufbringen einer Beschichtung auf eine Lampe
WO2003018865A1 (en) * 2001-08-24 2003-03-06 Nanonexus, Inc. Method and apparatus for producing uniform isotropic stresses in a sputtered film
SE527180C2 (sv) 2003-08-12 2006-01-17 Sandvik Intellectual Property Rakel- eller schaberblad med nötningsbeständigt skikt samt metod för tillverkning därav
US20060172065A1 (en) * 2005-02-01 2006-08-03 Carlotto John A Vacuum deposition of coating materials on powders
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof

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US4303489A (en) * 1978-08-21 1981-12-01 Vac-Tec Systems, Inc. Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate
US4312731A (en) * 1979-04-24 1982-01-26 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device and method
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US4520757A (en) * 1982-10-27 1985-06-04 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
JPS6092472A (ja) * 1983-10-24 1985-05-24 Ulvac Corp 広帯域スパツタ圧力用タ−ゲツト電極
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Also Published As

Publication number Publication date
EP0243556A1 (en) 1987-11-04
CN86107820A (zh) 1987-11-11
ES2004174A6 (es) 1988-12-16
EP0243556B1 (en) 1993-06-09
JPS62260057A (ja) 1987-11-12
KR940006206B1 (ko) 1994-07-11
DE3688556T2 (de) 1993-09-16
US4661233A (en) 1987-04-28
DE3688556D1 (de) 1993-07-15

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