KR870000891Y1 - Electro luminescent display element - Google Patents

Electro luminescent display element Download PDF

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Publication number
KR870000891Y1
KR870000891Y1 KR2019840011896U KR840011896U KR870000891Y1 KR 870000891 Y1 KR870000891 Y1 KR 870000891Y1 KR 2019840011896 U KR2019840011896 U KR 2019840011896U KR 840011896 U KR840011896 U KR 840011896U KR 870000891 Y1 KR870000891 Y1 KR 870000891Y1
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South Korea
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layer
fluorescent layer
light
display device
display element
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KR2019840011896U
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Korean (ko)
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KR860006495U (en
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손상호
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주식회사금성사
허신구
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음.No content.

Description

EL표시소자EL display element

제1도는 종래 기술의 EL표시소자를 보인 부분 절개사시도.1 is a partial cutaway perspective view showing an EL display element of the prior art.

제2도는 동 확대 단면도.2 is an enlarged cross-sectional view.

제3도는 본 고안의 EL표시소자를 보인 부분 절개사시도.3 is a partial cutaway perspective view showing an EL display device of the present invention.

제4도는 동 확대 단면도.4 is an enlarged cross-sectional view.

제5도는 종래 기술의 EL표시소자와 본 발명의 EL표시 소자의 전압 휘도 특성을 보인 그래프.5 is a graph showing voltage luminance characteristics of the EL display element of the prior art and the EL display element of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

21 : 코닝 글라스 22 : 투명전극21: Corning glass 22: transparent electrode

23 : 절연층 24 : 형광층23: insulating layer 24: fluorescent layer

25 : 절연층 26 : 배면전극25 insulating layer 26 back electrode

27 : 산란광흡수층 28 : ZnS/Mn형광층27: scattered light absorbing layer 28: ZnS / Mn fluorescent layer

29 : 광 반사층29: light reflection layer

본 고안은 판넬상의 EL표시소자(electro luminescence element)에 관한 것으로, 특히 형광층과 전면전극의 구조를 개선하여 휘도와 콘트라스트를 개선한 EL표시소자에 관한 것이다.The present invention relates to an EL display element on a panel, and more particularly to an EL display element having improved luminance and contrast by improving the structure of the fluorescent layer and the front electrode.

종래의 EL표시소자는 제1도 및 제2도에서 보인 바와같이, 유리기판(1)상에 산화인듐주석(ITO)투명전극(2)을 스트라이프 형태로 진공 증착하고, Y2O3절연층(3)과 ZnS/Mn형광층(4)을 스퍼터링 증착하며, 이에 다시 Al배면전극(6)을 진공 증착시켜 구성되었다.In the conventional EL display device, as shown in FIGS. 1 and 2, an indium tin oxide (ITO) transparent electrode 2 is vacuum-deposited on a glass substrate 1 in a stripe form, and a Y 2 O 3 insulating layer is formed. (3) and the ZnS / Mn fluorescent layer 4 were sputtered and deposited, and the Al back electrode 6 was then vacuum deposited.

이와같은 종래 기술의 EL표시소자에 있어서는 ZnS/Mn형광층(4)이 Y2O3절연층(3)이 끼여있어 발생광중에서 대부분의 광(7)은 전면의 ITO투명전극(2)으로 나오나 일부의 광(8)은 ITO투명전극(2)으로 나오지 않고 Y2O3절연층(3)을 통하여 나오게 되므로 표시화상의 콘트라스트가 떨어진다. 또한 일부의 광(9)은 형광층(4)내부로 떠돌다가 광포획현상에 의해 소멸되어 결과적으로 휘도가 떨어진다.In such a prior art EL display device, the ZnS / Mn fluorescent layer 4 is sandwiched with a Y 2 O 3 insulating layer 3, so that most of the light 7 is generated by the ITO transparent electrode 2 on the front surface. However, some of the light 8 is not emitted to the ITO transparent electrode 2 but is emitted through the Y 2 O 3 insulating layer 3, so that the contrast of the display image is inferior. In addition, some of the light 9 floats inside the fluorescent layer 4 and is extinguished by the light trapping phenomenon, resulting in low luminance.

본 고안에 있어서는 종래 기술의 EL표시소자에 있어서, 저휘도와 저콘트라스트의 문제점을 해결하는데 그 목적이 있는바, 이를 예시도면에 의거하여 보다 상세히 설명하면 다음과 같다.In the present invention, the purpose of solving the problems of low brightness and low contrast in the EL display device of the prior art, which will be described in more detail based on the exemplary drawings as follows.

요약컨데, 본 고안의 EL표시소자는 ITO투명전극 사이에 유색유전체 산란광 흡입층을 진공 증착하고 두 절연층 사이의 형광층을 ZnS/Mn형광층과 광반사층의 이중 스트라이프 구조로 구성하는 것이며, 유전체 산란광 흡수층은 그 소재가 As2O3이고 광반사층은 Mgo임을 특징으로 한다.In summary, the EL display device of the present invention is a vacuum deposition of colored dielectric scattered light absorbing layer between ITO transparent electrodes, and the fluorescent layer between two insulating layers is composed of a double stripe structure of ZnS / Mn fluorescent layer and light reflecting layer. The scattered light absorbing layer is characterized in that the material is As 2 O 3 and the light reflection layer is Mgo.

본 고안의 EL표시소자는 제3도 및 제4도에서 보인 바와같이, 코닝 글라스(21)상에 1500Å두께의 ITO투명도전막을 진공 증착하여 사진에칭법으로 스트라이프 형태의 투명전극(22)을 형성하고 이 투명전극(22)사이에는 흑색유전체 산란광 흡수층(27)을 진공 증착시킨다.As shown in FIGS. 3 and 4, the EL display device of the present invention forms a stripe-shaped transparent electrode 22 by photolithography by vacuum depositing an ITO transparent conductive film having a thickness of 1500 상 에 on the corning glass 21. FIG. A black dielectric scattered light absorbing layer 27 is vacuum deposited between the transparent electrodes 22.

이 산란광 흡수층(27)은 광흡수 효과가 우수한 물질로 As2O3가 선택되었다. 다시 투명전극(22)과 산란광 흡수층(27)상에는 약 1500Å 두께의 Y2O3절연층(23)을 스퍼터링 증착시키며, 이러서 6000Å 두께의 형광층(24)을 형성한다.As scattered light absorbing layer 27, As 2 O 3 was selected as a material having excellent light absorption effect. On the transparent electrode 22 and the scattered light absorbing layer 27, a Y 2 O 3 insulating layer 23 having a thickness of about 1500 mW is sputtered and deposited, thereby forming a fluorescent layer 24 having a thickness of 6000 mW.

이 형광층(24)은 Mn을 도핑한 ZnS/Mn 형광층(28)과 유전체 광반사층(29)의 반복된 스트라이프형으로 구성되며, 광반사층(29)은 반사효과가 우수한 Mgo가 선택되었다. 다시 이 형광층(24)상에는 1500Å두께의 Y2O3절연층(25)이 스퍼터링 증착되고 Al배면전극(26)이 진공 증착된다.The fluorescent layer 24 is composed of a repeated stripe type of the Mn-doped ZnS / Mn fluorescent layer 28 and the dielectric light reflection layer 29, and the light reflection layer 29 has Mgo excellent in reflection effect. Again, on the fluorescent layer 24, a Y 2 O 3 insulating layer 25 having a thickness of 1500 m is sputtered and the Al back electrode 26 is vacuum deposited.

이와같은 본 발명의 EL표시소자는 투명전극(22)과 Al배면전극(26)사이에 교류 펄스전압(30)이 인가된다. 교류 펄스전압(30)이 인가될 때에 ZnS/Mn형광층(28)내의 활성제인 Mn이온이 전자충격으로 585nm 파장의 광을 발생시켜 문자와 화상을 표시하게 된다.In such an EL display device of the present invention, an alternating pulse voltage 30 is applied between the transparent electrode 22 and the Al back electrode 26. When the alternating pulse voltage 30 is applied, Mn ions, which are active agents in the ZnS / Mn fluorescent layer 28, generate light at a wavelength of 585 nm by electron shock to display characters and images.

교류 펄스전압(30)이 전극(22)(26)에 인가되면 Y2O3절연층(25)과 ZnS/Mn 형광 층(28)사이의 계면에 있던 전자(e)들이 에너지를 받아 Mn이온(‥ )을 충격하여 Mn이온(·)이 여기되었다가 기저상태로 돌아올때 에너지 차이에 해당하는 만클의 585nM의 광을 발생한다.When the AC pulse voltage 30 is applied to the electrodes 22 and 26, electrons e at the interface between the Y 2 O 3 insulating layer 25 and the ZnS / Mn fluorescent layer 28 are energized to receive Mn ions. When Mn ions (·) are excited and return to the ground state, they generate 585 nM of light corresponding to the energy difference.

이때에 대부분의 광(31)은 ITO투명전극(22)을 통하여 나옴과 동시에 굴절율이 2.3으로 큰 ZnS/Mn형광층(28)과 굴절율이 1.73으로 작은 Mgo 유전체 광반사층(29)사이에서 일부의 광(32)이 전반사를 일으켜 ITO투명전극(22)을 통하여 나오고 광포획되는 광이 없으므로 휘도가 증가된다.At this time, most of the light 31 exits through the ITO transparent electrode 22 and is partially between the ZnS / Mn fluorescent layer 28 having a high refractive index of 2.3 and the Mgo dielectric light reflecting layer 29 having a small refractive index of 1.73. Since the light 32 totally reflects and exits through the ITO transparent electrode 22 and no light is captured, the brightness is increased.

또한 극히 일부의 광(33)도 As2S3의 흑색 유전체 산란광 흡수체(27)가 흡수하므로 콘트라스트가 증대한다.In addition, since only a part of the light 33 is absorbed by the black dielectric scattered light absorber 27 of As 2 S 3 , the contrast is increased.

이와같은 본 고안의 EL표시소자는 그 전압-휘도 특성이 종래 기술의 전압-휘도 특성과 비교하였을때에 제5도에서 보인 바와같이 위도가 종래의 기술보다 1.2-1.6배 향상되었다.In the EL display device of the present invention, when the voltage-luminance characteristic is compared with the voltage-luminance characteristic of the prior art, as shown in FIG.

Claims (2)

코닝 글라스(21)상에 산화인듐주석의 투명전극(22)을 스트라이프 형태로 증착 형성하고, 이 투명전극(22)상에 절연층(23)과 형광층(24)을 증착한 다음 절연층(25)과 배면전극(26)이 증착된 EL표시소자에 있어서, 상기 투명전극(22)사이에 스트라이프 형태의 흑색 유전체 산란광 흡수층(27)이 진공 증착되고, 형광층(24)은 스트라이프 형의 ZnS/Mn형광층(28)과 유전체 광반사층(29)로 구성됨을 특징으로 하는 EL표시소자.An indium tin oxide transparent electrode 22 was formed on the corning glass 21 in a stripe form, and an insulating layer 23 and a fluorescent layer 24 were deposited on the transparent electrode 22, and then an insulating layer ( In the EL display device in which 25 and the back electrode 26 are deposited, a stripe-type black dielectric scattered light absorbing layer 27 is vacuum deposited between the transparent electrodes 22, and the fluorescent layer 24 is formed of a stripe-type ZnS. And an Mn fluorescent layer (28) and a dielectric light reflection layer (29). 청구범위 제1항에 있어서, 상기 산란광 흡수층(27)이 As2O3이고, 광반사층(29)이 Mgo임을 특징으로하는 EL 표시소자.An EL display device according to claim 1, wherein the scattered light absorbing layer (27) is As 2 O 3 and the light reflecting layer (29) is Mgo.
KR2019840011896U 1984-11-21 1984-11-21 Electro luminescent display element KR870000891Y1 (en)

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KR2019840011896U KR870000891Y1 (en) 1984-11-21 1984-11-21 Electro luminescent display element

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KR2019840011896U KR870000891Y1 (en) 1984-11-21 1984-11-21 Electro luminescent display element

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KR860006495U KR860006495U (en) 1986-06-21
KR870000891Y1 true KR870000891Y1 (en) 1987-03-06

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