KR950001801B1 - Thin film el device - Google Patents
Thin film el device Download PDFInfo
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- KR950001801B1 KR950001801B1 KR1019910024474A KR910024474A KR950001801B1 KR 950001801 B1 KR950001801 B1 KR 950001801B1 KR 1019910024474 A KR1019910024474 A KR 1019910024474A KR 910024474 A KR910024474 A KR 910024474A KR 950001801 B1 KR950001801 B1 KR 950001801B1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- Electroluminescent Light Sources (AREA)
Abstract
Description
제1도는 종래 EL 소자의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a conventional EL element.
제2도는 본 발명 EL 소자의 구조를 나타낸 단면도.2 is a cross-sectional view showing the structure of the EL element of the present invention.
제3도는 본 발명의 PLZT와 절연물질과의 비유전율 및 유전체 강도를 나타낸 도면.3 is a diagram showing the dielectric constant and dielectric strength of the PLZT and the insulating material of the present invention.
제4도는 본 발명 PLZT의 굴절율을 나타낸 그래프.4 is a graph showing the refractive index of the present invention PLZT.
제5도는 본 발명과 종래의 소자구동전압을 비교한 그래프.5 is a graph comparing the present invention and the conventional device driving voltage.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 글래스 기판 2 : ITO 투명전극1 Glass substrate 2 ITO transparent electrode
3 : 제1절연층 3a, 3c : Y2O3막3: first insulating layer 3a, 3c: Y 2 O 3 film
3b : PLZT 막 4 : 발광층3b: PLZT film 4: light emitting layer
5 : 제2절연층 6 : 금속 전극5: second insulating layer 6: metal electrode
본 발명은 박막 EL(Electroluminescence)소자에 관한 것으로 특히 제1절연층의 구조를 개선하여 구동전압을 낮춤은 물론 특정 파장이하의 빛을 필터링(filtering)하여 색순도를 향상시키기에 적당하도록 한 것이다.The present invention relates to a thin film EL (Electroluminescence) device, in particular to improve the structure of the first insulating layer to reduce the driving voltage as well as to filter the light below a specific wavelength to improve the color purity.
종래 EL 소자의 제조공정은 제1도에 도시된 바와 같이 투명한 평면 그래스(Glass) 기판(1)위에 ITO 투명전극(2)을 약 2,000Å 도포하고 그 위에 제1절연층(예를들어 Si3N4)(3)을 약 3,000Å 내외의 두께로 증착한다.In the conventional EL device fabrication process, as shown in FIG. 1, an ITO transparent electrode 2 is coated on the transparent flat glass substrate 1 by about 2,000 microseconds, and the first insulating layer (for example, Si 3) is applied. N 4 ) (3) is deposited to a thickness of about 3,000 kPa.
그리고 ZnS 계통의 발광층(4)을 약 6,000Å 내외의 두께로 증착한 후 그 위에 3,000Å 두께의 제2절연층(예를들어 SiON 계통)(5)을 증착한다.After the ZnS-based light emitting layer 4 is deposited to a thickness of about 6,000 kPa, a second insulating layer (for example, SiON system) 5 having a thickness of 3,000 kPa is deposited thereon.
다음에 제2절연층(5)위에 2,000Å 두께의 금속전극(예를들어 Al 계통)(6)을 증착하고 전극 양단, 즉 ITO 투명적극(2)과 금속전극(6) 사이에 구동전원(7)을 연결하여 소자를 완성한다.Next, a metal electrode (for example, Al type) 2,000 mm thick is deposited on the second insulating layer 5, and a driving power source (B) between the electrode, that is, between the ITO transparent electrode 2 and the metal electrode 6, is deposited. 7) to complete the device.
이와같은 종래의 박막 EL 소자에 있어서는 제1절연층(3)/발광층(4)/제2절연층(5)으로 이루어지는 EL막의 양단에 교류전압이 인가되면 절연층/ 발광층의 계면상태로부터 전자가 전도대로 통과하면서 형광층 내의 고전계에 의해 열전자(Hot Electron)로 가속되어 ZnS 내에 도핑된 도펀트 이온을 충격-여기시키고 일부 전자는 ZnS 격자를 이온화시키면서 전자-홀쌍을 만든다.In such a conventional thin film EL element, when an AC voltage is applied to both ends of an EL film composed of the first insulating layer 3 / light emitting layer 4 / second insulating layer 5, electrons are discharged from the interface state of the insulating layer / light emitting layer. As it passes through the conduction band, it is accelerated to hot electrons by a high electric field in the fluorescent layer to shock-excite dopant ions doped in ZnS, and some electrons ionize the ZnS lattice to form electron-hole pairs.
또한, 열전자에 의해 전도대로 여기된 전자가 다시 가전자대로 떨어질 때 에너지차 만큼의 파장을 갖는 빛을 방출하게 된다.In addition, when electrons excited by the conduction band by the hot electrons fall back to the valence band, light having a wavelength equal to the energy difference is emitted.
그러나, 상기와 같은 종래 기술에 있어서는 구동전압이 200V 정도이므로 전압이 비교적 높고, 만일 원하지 않는 파장대의 빛을 필터링하려면 글래스쪽에 별도의 칼라 필터를 사용해야 하는 번거로움이 있다.However, in the prior art as described above, since the driving voltage is about 200V, the voltage is relatively high, and if you want to filter out light of an unwanted wavelength band, it is troublesome to use a separate color filter on the glass side.
본 발명은 이와같은 종래의 결점을 해결하기 위한 것으로 제1절연층을 3층으로 형성하여 소자의 구동전압을 낮추고 자동적으로 칼라필터의 역할까지 수행할 수 있는 박막 EL 소자를 제공하는데 그 목적이 있다.An object of the present invention is to provide a thin film EL device capable of reducing the driving voltage of the device and automatically performing the role of a color filter by forming the first insulating layer in three layers to solve such a conventional drawback. .
이하에서 이와같은 목적을 달성하기 위한 본 발명의 실시예를 첨부된 도면 제2도 내지 제5도에 의해 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail with reference to FIGS. 2 to 5 as follows.
먼저 제2도는 본 발명 EL소자의 구조를 단면으로 나타낸 것으로 이의 제조공정을 살펴보면 평면 글래스 기판(1)위에 ITO 투명전극(2)을 약 2,000Å 증착하고 그 위에 제1절연층(3)을 증착하되 약 1,000Å의 Y2O3막(3a), 약 2,000Å의 PLZT 막(3b), 약 1,000Å의 Y2O3막(3c)을 차례로 증착하여 제1절연층(3)을 완성한다.2 is a cross-sectional view showing the structure of the EL device of the present invention. Looking at the manufacturing process thereof, the ITO transparent electrode 2 is deposited on the flat glass substrate 1 by about 2,000 Å and the first insulating layer 3 is deposited thereon. However, the first insulating layer 3 is completed by depositing about 1,000 ns of a Y 2 O 3 film 3a, about 2,000 ns of a PLZT film 3b, and about 1,000 ns of a Y 2 O 3 film 3c. .
그리고 상기 제1절연층(3)위에 약 6,000Å의 발광층(4)을 증착하고 다시 약 3,000Å의 제2절연층(예를 들어 SiON 계통)(5)을 증착한후 상기 제2절연층(5)위에 약 2,000Å의 금속전극(예를들어 Al 계통)을 증착한다.Then, the light emitting layer 4 of about 6,000 mW is deposited on the first insulating layer 3, and the second insulating layer 5 of about 3,000 mW is deposited, and then the second insulating layer ( 5) Deposit a metal electrode (for example Al system) of about 2,000 Å on it.
이와같이 박막 EL소자를 제조하면 제3도에 나타난 바와 같이 PLZT 막(3b)의 비유전율이 기존절연물질(예를들어 SiON, Si3N4, Y2O3)보다 약 10배이상 커서 제5도와 같이 소자의 구동전압을 현저히 감소시킬 수 있으며, 제4도에 나타난 바와 같이 λ(파장)＜4,000Å의 영역에서 굴절율이 현저하게 커지므로 이 4,000Å 파장 이하의 빛을 억제시키는 칼라 필터의 역할을 하게 된다.As described above, when the thin film EL device is manufactured, as shown in FIG. 3, the relative dielectric constant of the PLZT film 3b is about 10 times greater than that of existing insulating materials (for example, SiON, Si 3 N 4 , and Y 2 O 3 ). As shown in FIG. 4, the driving voltage of the device can be significantly reduced, and as shown in FIG. 4, the refractive index becomes remarkably large in the region of λ (wavelength) < Will be
즉, 발광층(4)과 제1,2절연층(3)(5)계면에서의 경제 조건(Boundary Condition), 즉 A+R+T=1에서(단, A는 흡수율, R는 반사율, T는 투과율, K는 허수부, n1은 발광층, n2는 절연층 굴절율)이므로 n2값이 커지면 R값이 커지고 상대적으로 T값의 감소를 가져와 4,000Å 이하의 빛을 억제시키게 된다.That is, at boundary conditions of the light emitting layer 4 and the first and second insulating layers 3 and 5, that is, A + R + T = 1 Importing (where, A is absorbance, R is reflectance, T is the transmittance, K is an imaginary unit, n 1 is the light-emitting layer, n 2 is the insulating layer refractive index), because larger the n 2 value the value of R increases relative to the decrease in the value of T It will suppress light below 4,000 Å.
따라서, 본 발명에 의하면 PLZT 막(3b)의 특성에 의해 소자의 구동전압을 낮출 수 있고 4,000Å 아하의 파장의 빛을 억제하여 색순도를 향상시킬 수 있는 효과가 있다.Therefore, according to the present invention, the characteristic of the PLZT film 3b can lower the driving voltage of the device and improve the color purity by suppressing light having a wavelength of 4,000 kHz or less.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910024474A KR950001801B1 (en) | 1991-12-26 | 1991-12-26 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910024474A KR950001801B1 (en) | 1991-12-26 | 1991-12-26 | Thin film el device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930014942A KR930014942A (en) | 1993-07-23 |
| KR950001801B1 true KR950001801B1 (en) | 1995-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910024474A KR950001801B1 (en) | 1991-12-26 | 1991-12-26 | Thin film el device |
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| KR (1) | KR950001801B1 (en) |
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1991
- 1991-12-26 KR KR1019910024474A patent/KR950001801B1/en not_active IP Right Cessation
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| KR930014942A (en) | 1993-07-23 |
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