KR860003654A - 반도체 장치의 제조장치 - Google Patents

반도체 장치의 제조장치 Download PDF

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Publication number
KR860003654A
KR860003654A KR1019850005537A KR850005537A KR860003654A KR 860003654 A KR860003654 A KR 860003654A KR 1019850005537 A KR1019850005537 A KR 1019850005537A KR 850005537 A KR850005537 A KR 850005537A KR 860003654 A KR860003654 A KR 860003654A
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South Korea
Prior art keywords
wire
binding
bowl
manufacturing apparatus
gas
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KR1019850005537A
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English (en)
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KR900000205B1 (ko
Inventor
마쯔오(외3) 고바야시
오사무 우스다
요시히꼬 사노
고이찌로 아쯔미
Original Assignee
사바 쇼오이찌
가부시끼 가이샤 도오시바
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Priority claimed from JP59219902A external-priority patent/JPS6197937A/ja
Priority claimed from JP59219903A external-priority patent/JPS6197938A/ja
Application filed by 사바 쇼오이찌, 가부시끼 가이샤 도오시바 filed Critical 사바 쇼오이찌
Publication of KR860003654A publication Critical patent/KR860003654A/ko
Application granted granted Critical
Publication of KR900000205B1 publication Critical patent/KR900000205B1/ko

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    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent

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Abstract

내용 없음

Description

반도체 장치의 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구현예에 따른 반도체 장치를 제조하는 장치의 개략도.
제2도 내지 제6도는 본 발명에 따른 반도체 장치의 제조과정을 도시한 세로 단면도.

Claims (16)

  1. 반도체 소자(50)의 전극패드(56)와 리이드후레임(40)의 외부유도 도선 사이에 결속와이어(80)가 가설되어 있는 반도체 장치를 제조하는 제조장치에 있어서, 와이어 결속부(14)에 구리 또는 구리합금의 걸속와이어(80)를 가설하고 걸속와이어의 하단부에 보올(82,84)을 형성시키기 위한 보올 형성 수단(90)과, 결속와이어를 와이어 결속부에 공급하고 결속와이어의 보올(82)을 전극패드(56)상에, 압축시키기 위한 결속와이어 공급수단(60)과, 후미 결속부에서 결속와이어의 보올(84)을 외부유도 도선(44)상에 압축시키기 위한 가압수단(70)으로 구성되어 있고, 이송방향(2)을 따라 리이드후레임(40)을 이송시킬 수 있도록 된 이송통로(10)에는 상기 이송방향(2)을 따라 각기 다른 형태로 분리된 와이어 결속부(14)와 후미 결속부(16)가 형성되어 있으며, 상기 와이어 결속부(14)와 후미 결속부(14)와 후미 결속부(16)에 환원성가스 또는 불활성 가스를 공급하고 결속와이어와 보올을 환원성가스나 불활성가스로 에워싸기 위한 가스공급수단(31,35,48)으로 이루어진 것을 특징으로 하는 결속상태가 개선된 반도체 장치의 제조장치.
  2. 제1항에 있어서, 와이어 결속부위 및 후미 결속부위에는 각각 리이드후레임 (40)을 가열하기 위한 가열수단(30,32)이 설치된 것을 특징으로 하는 제조장치.
  3. 제2항에 있어서, 가열수단(30,32)은 리이드후레임(40)을 약 300℃로 가열시키는 것임을 특징으로 하는 제조장치.
  4. 제1항에 있어서, 환원성 가스는 200℃이상의 온도인 것을 특징으로 하는 제조장치.
  5. 제4항에 있어서, 환원성가스는 5내지 20%의 H2가스와, 95내지 80%의 N2가스가 혼합된 것임을 특징으로 하는 제조장치.
  6. 제1항에 있어서, 결속와이어 공급수단은 결속와이어(80)의 보올(82)을 전극패드에 압착시키기 위하여 보올(82)과 전극패드(56)와의 결속면의 직경을 결속와이어의 직경에 2배 이상 되도록 한 것임을 특징으로 하는 제조장치.
  7. 제6항에 있어서, 결속와이어 공급수단은 결속와이어(80)의 보올(82)을 전극패드에 압착시키기 위하여 전극패드(56) 내부로 보올의 일부를 4내지 3㎛깊이로 장입시키도록 된 것임을 특징으로 하는 제조장치.
  8. 제7항에 있어서, 결속와이어의 공급수단은 결속와이어(80)에 50내지 100g의 하중을 부가시키도록 된 것임을 특징으로 하는 제조장치.
  9. 제1항에 있어서, 가압수단을 결속와이어(80)의 보올(84)을 외부유도 도선 (44)에 압착시키기 위하여 외부유도 도선(44)내의 보올(84)의 일부를 20에서 50㎛의 깊이로 장입시키도록 한 것임을 특징으로 하는 제조장치.
  10. 제9항에 있어서 가압수단은 결속와이어에 300내지 500g의 하중을 부가시키도록 된 것임을 특징으로 하는 제조장치.
  11. 제1항에 있어서, 이송통로(10)에는 이송방향(2)을 따라 와이어 결속부의 앞부분에 다이결부가 형성된 것임을 특징으로 하는 제조장치.
  12. 제11항에 있어서, 다이 결속부(12)는 반도체 소자(50)를 공급하기 위하여 반도체 소자를 리이드후레임(40)상에 설치시키는 반도체 소자 설치수단이 형성된 것임을 특징으로 하는 제조장치.
  13. 제1항에 있어서, 보올 형성 수단은 내관(92)과 내관의 외측에 외관(94)을 가지고 있는 2중관 구조의 버너(90)로 형성되어 있고, 상기 내관(92)에서는 이송통로(10)를 통하여 공급되는 H2와 O2가스가 2 : 1의 비율로 혼합된 혼합가스를 분출하여 산수소불꽃(100)을 형성하며, 상기의 외관(94)과 내관(92)사이에서는 O2와 N2가스의 혼합비가 20내지 100% : 80내지 0%인 혼합가스가 상기의 산수소불꽃(100)의 부근에서 분출되어 공기막(102)을 형성시키도록 된 것을 특징으로 하는 제조장치.
  14. 제13항에 있어서, 이동통로(10)는 실질적으로 장방형 및 원추형 덮개(20)로 이루어지고, 이 덮개가 있는 와이어 결속부는 와이어 결속부(14)를 이송통로(10)에 공급하기 위하여 창틀(24)이 형성된 것임을 특징으로 하는 제조장치.
  15. 제1항에 있어서, 창틀(24)은 그 개구면적이 변화될 수 있도록 형성되어 있되 버너(90)가 결속와이어(80)를 용융시켜 보올을 형성할 경우에는 상기 창틀(24)의 개구면적이 작아지면서 보올(82)의 주면을 환원성가스가 둘러싸이게 되도록 형성된 것임을 특징으로 하는 제조장치.
  16. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850005537A 1984-10-19 1985-07-31 결속상태가 개선된 반도체 장치의 제조장치 KR900000205B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59219902A JPS6197937A (ja) 1984-10-19 1984-10-19 半導体素子の組立方法及びその装置
JP59-219902 1984-10-19
JP59219903A JPS6197938A (ja) 1984-10-19 1984-10-19 半導体素子の組立方法
JP59-219903 1984-10-19

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KR860003654A true KR860003654A (ko) 1986-05-28
KR900000205B1 KR900000205B1 (ko) 1990-01-23

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Publication number Priority date Publication date Assignee Title
TWI244419B (en) * 2003-09-25 2005-12-01 Unaxis Internat Tranding Ltd Wire bonder with a downholder for pressing the fingers of a system carrier onto a heating plate
CN100336191C (zh) * 2005-03-04 2007-09-05 汕头华汕电子器件有限公司 用铜线形成半导体器件内引线的方法
CN104260009B (zh) * 2014-08-23 2016-05-11 华东光电集成器件研究所 一种衬底粘接夹持定位装置

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CN85106110B (zh) 1987-12-09
KR900000205B1 (ko) 1990-01-23

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