KR860002015A - Etching Endpoint Detection Method - Google Patents

Etching Endpoint Detection Method Download PDF

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Publication number
KR860002015A
KR860002015A KR1019850006310A KR850006310A KR860002015A KR 860002015 A KR860002015 A KR 860002015A KR 1019850006310 A KR1019850006310 A KR 1019850006310A KR 850006310 A KR850006310 A KR 850006310A KR 860002015 A KR860002015 A KR 860002015A
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South Korea
Prior art keywords
detection method
etching
light emission
endpoint detection
intensity
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KR1019850006310A
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Korean (ko)
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KR890000389B1 (en
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쓰요시 다까하시 (외 2)
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미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR860002015A publication Critical patent/KR860002015A/en
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Publication of KR890000389B1 publication Critical patent/KR890000389B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음No content

Description

에칭 종점 검출 방법Etching Endpoint Detection Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 에칭 종점 검출 방법을 실시할때에 발광 분광법 에칭 종점 검출 장치를 적용한 플라즈마 에칭 장치의 구성도.1 is a block diagram of a plasma etching apparatus to which an emission spectroscopy etching end point detection device is applied when performing the etching end point detection method of the present invention.

제2도는 제1도의 웨이퍼의 단면도.2 is a cross-sectional view of the wafer of FIG.

Claims (9)

폴리이미드 수지를 플라즈마를 이용하여 에칭하는 행정과, 상기 에칭시에 발생하는 생성물의 발광중에서 특정파장의 발광을 선택하는 행정과, 상기 선택한 발광의 발광 강도의 경시 변화를 모니터하는 행정을 갖는 것을 특징으로 하는 에칭 종점 검출 방법.It has a step of etching a polyimide resin using a plasma, a step of selecting a light emission of a specific wavelength among the light emission of the product which generate | occur | produces at the time of an etching, and a step of monitoring the time-dependent change of the light emission intensity of the said selected light emission, It is characterized by the above-mentioned. Etching Endpoint Detection Method. 제1항에 있어서, 에칭 가스로 O2를 주성분으로 하는 가스를 사용하고, 이 가스의 압력을 0.1∼1×10-3Torr로 한 것을 특징으로 하는 에칭 종점 검출 방법.The etching end point detection method according to claim 1, wherein a gas containing O 2 as a main component is used as the etching gas, and the pressure of the gas is 0.1 to 1 × 10 -3 Torr. 제2항에 있어서, 상기 O2를 주성분으로 하는 가스로서, O2또는 O2+CF4가스를 사용하는 것을 특징으로 하는 에칭 종점 검출 방법.The etching endpoint detection method according to claim 2, wherein O 2 or O 2 + CF 4 gas is used as the gas containing O 2 as a main component. 제1항에 있어서, 상기 생성물이 상기 에칭시에 발생하는 반응물과 분해물로 이루어진 것을 특징으로 하는 에칭 종점 검출 방법.The etching endpoint detection method according to claim 1, wherein the product is composed of reactants and decomposition products generated during the etching. 제4항에 있어서, 상기 반응물로서 CO, NO 또는 NH를 선택하고, 이 CO, NO 또는 NH의 발광 강도의 경시변화를 모니터하는 것을 특징으로 하는 에칭 종점 검출 방법.The etching endpoint detection method according to claim 4, wherein CO, NO or NH is selected as the reactant, and the change over time in the emission intensity of the CO, NO or NH is monitored. 제5항에 있어서, 상기 CO발 발광중에서 파장 519.8nm의 발광을 선택하고, 이 경광의 강도의 경시변화를 모니터하는 것을 특징으로 하는 에칭 종점 검출 방법.The etching endpoint detection method according to claim 5, wherein light emission having a wavelength of 519.8 nm is selected during the CO emission, and the change over time of the intensity of the light is monitored. 제4항에 있어서, 상기분해물로서 N2,H+또는 N을 선택하고, 이 N2,H+또는 N의 발광 강도의 경시변화를 모니터하는 것을 특징으로 하는 에칭 종점 검출 방법.The etching endpoint detection method according to claim 4, wherein N 2 , H + or N is selected as the decomposition product, and the change over time of the emission intensity of N 2 , H + or N is monitored. 제7항에 있어서, 상기 N2의 발광중에서 파장 337.0nm의 발광을 선택하고, 이 발광의 강도의 경시변화를 모니터 하는 것을 특징으로 하는 에칭 종점 검출 방법.8. The etching endpoint detection method according to claim 7, wherein the light emission having a wavelength of 337.0 nm is selected among the light emission of N 2 , and the change over time of the intensity of the light emission is monitored. 제7항에 있어서, 상기 H+의 발광중에서 파장 486.1nm의 발광을 선택하고, 이 발광의 강도의 경시변화를 모니터하는 것을 특징으로 하는 에칭 종점 검출 방법.8. The etching endpoint detection method according to claim 7, wherein the light emission having a wavelength of 486.1 nm is selected among the light emission of H + , and the change over time of the intensity of the light emission is monitored. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850006310A 1984-08-31 1985-08-30 Detecting method of finishing point of etching KR890000389B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59180608A JPS6159834A (en) 1984-08-31 1984-08-31 Detecting method of end point of etching
JP84-180608 1984-08-31
JP180608 1984-08-31

Publications (2)

Publication Number Publication Date
KR860002015A true KR860002015A (en) 1986-03-24
KR890000389B1 KR890000389B1 (en) 1989-03-16

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KR1019850006310A KR890000389B1 (en) 1984-08-31 1985-08-30 Detecting method of finishing point of etching

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JP (1) JPS6159834A (en)
KR (1) KR890000389B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773659B1 (en) * 1999-12-08 2007-11-05 산요덴키가부시키가이샤 Plasma cvd apparatus and method for cleaning a chamber of the plasma cvd apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7746000A (en) * 1999-09-28 2001-04-30 Jetek, Inc. Atmospheric process and system for controlled and rapid removal of polymers fromhigh depth to width aspect ratio holes
US7365019B2 (en) 1999-11-01 2008-04-29 Jetek, Llc Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes
KR100413476B1 (en) * 2000-10-27 2003-12-31 주식회사 하이닉스반도체 method for detection etch end point

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125079A (en) * 1974-08-26 1976-03-01 Fujitsu Ltd KOTAINETSUSEIJUSHIMAKUNO SHORIHOHO
JPS6018923A (en) * 1983-07-13 1985-01-31 Hitachi Ltd Taper etching of polyimide resin layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773659B1 (en) * 1999-12-08 2007-11-05 산요덴키가부시키가이샤 Plasma cvd apparatus and method for cleaning a chamber of the plasma cvd apparatus

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JPS6159834A (en) 1986-03-27
KR890000389B1 (en) 1989-03-16

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