KR840009132A - Semiconductor Pressure Center - Google Patents

Semiconductor Pressure Center Download PDF

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Publication number
KR840009132A
KR840009132A KR1019840001410A KR840001410A KR840009132A KR 840009132 A KR840009132 A KR 840009132A KR 1019840001410 A KR1019840001410 A KR 1019840001410A KR 840001410 A KR840001410 A KR 840001410A KR 840009132 A KR840009132 A KR 840009132A
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KR
South Korea
Prior art keywords
bridge circuit
circuit
amplification
gauge
temperature
Prior art date
Application number
KR1019840001410A
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Korean (ko)
Inventor
가즈지 야마다 (외 4)
Original Assignee
미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR840009132A publication Critical patent/KR840009132A/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

내용 없음No content

Description

반도체압력센터Semiconductor Pressure Center

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본원 발명의 일실시예를 나타낸 회로도.1 is a circuit diagram showing an embodiment of the present invention.

제3도는 제1도의 구체화 회로도.3 is a detailed circuit diagram of FIG.

Claims (4)

최소한 1개가 외력에 의해 저항변화하는 게이지저항으로 구성되는 브리지회, 와, 이 브리지회로의 출력을 증폭하는 증폭회로 및 상기 브리지회로에 구동전압을 제공하는 구동전원회로를 갖는 것에 있어서, 상기 브리지회를 구성하는 게이지저항의 온도변화가 상기 증폭회로의 증폭도에 주는 영향을 소거하기 위한 증폭도보상수단을 구비한 것을 특징으로 하는 반도체압력센터.The bridge circuit comprising at least one bridge circuit composed of a gauge resistor that changes resistance by an external force, an amplifying circuit for amplifying the output of the bridge circuit, and a driving power supply circuit for providing a driving voltage to the bridge circuit. And amplification degree compensating means for canceling the influence of the temperature change of the gauge resistance constituting the amplification circuit on the amplification degree. 상기 증폭도보상수단은 상기 브리지회로의 인가전압을 상기 게이지저항의 온도변화에 의거한 상기 증폭기의 증폭율의 변화를 취소하는 방향으로 보정하는 보정전압인 것을 특징으로 하는 특허청구의 범위 1기재의 반도 체압력센터.The amplification degree compensating means is a peninsula according to claim 1, wherein the applied voltage of the bridge circuit is a correction voltage which corrects the applied voltage of the bridge circuit in a direction of canceling the change of the amplification factor of the amplifier based on the temperature change of the gauge resistance. Body pressure center. 상기 증폭도 온도보상수단은 상기 브리지회로의 출력을 상기 게이지재항의 온도변화에 의거한 상기 증폭기의 증폭율이 변화를 취소하는 방향으로 보정하는 보정전압인 것을 특징으로 하는 특허청구의 범위 1기재의 반도체압력센터The amplification degree temperature compensation means is a correction voltage for correcting the output of the bridge circuit in a direction in which the amplification ratio of the amplifier based on the temperature change of the gauge term cancels the change. Semiconductor Pressure Center 상기 구동전원회로는 온도에 비례한 출력전류를 발생하는 전류원을 가지며, 상기 전류원의 출력전류를 저항에 통류하여 그 전압강하를 상기 브리지의 구동전원으로 하는 동시에 상기 게이지저항의 온도특성과 일치시킨 것을 특징으로 하는 특허청구의 범위 1기재의 반도체압력센서.The driving power supply circuit has a current source for generating an output current proportional to temperature, and the output current of the current source is passed through a resistor so that the voltage drop is the driving power of the bridge and coincides with the temperature characteristic of the gauge resistance. A semiconductor pressure sensor according to claim 1, characterized by the above-mentioned. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840001410A 1983-04-06 1984-03-20 Semiconductor Pressure Center KR840009132A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59730783A 1983-04-06 1983-04-06
US59307 1983-04-06

Publications (1)

Publication Number Publication Date
KR840009132A true KR840009132A (en) 1984-12-24

Family

ID=55315818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001410A KR840009132A (en) 1983-04-06 1984-03-20 Semiconductor Pressure Center

Country Status (1)

Country Link
KR (1) KR840009132A (en)

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