JPH04155233A - Correction of temperature characteristic for pressure sensor - Google Patents
Correction of temperature characteristic for pressure sensorInfo
- Publication number
- JPH04155233A JPH04155233A JP2277763A JP27776390A JPH04155233A JP H04155233 A JPH04155233 A JP H04155233A JP 2277763 A JP2277763 A JP 2277763A JP 27776390 A JP27776390 A JP 27776390A JP H04155233 A JPH04155233 A JP H04155233A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- sensor
- temperature
- signal
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012937 correction Methods 0.000 title abstract description 21
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 abstract description 25
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
Landscapes
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ブリッジ形式で構成される圧力センサの温度
特性の補正方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for correcting the temperature characteristics of a pressure sensor configured in a bridge type.
［従来の技術］
従来、この種の半導体圧力センサは、温度の変化により
その特性が大きく変化するので、外部に温度センサを別
個に設けて温度変化による補正を行っているものもある
が、このようなものは圧力センサと温度センサとの間の
距離が離れていることによる温度誤差、および温度勾配
による遅れ等が生じて高精度の補正が行えず、第３図に
示すように、このセンサの内部に温度補償用の拡散抵抗
を配置して温度特性の補正を行っている。[Prior Art] Conventionally, the characteristics of this type of semiconductor pressure sensor change greatly due to changes in temperature, so some models have installed a separate external temperature sensor to make corrections due to temperature changes. However, as shown in Figure 3, high-precision correction cannot be performed due to temperature errors due to the distance between the pressure sensor and temperature sensor and delays due to temperature gradients. A diffused resistor for temperature compensation is placed inside the sensor to correct the temperature characteristics.
すなわち、第３図の（ａ）図はフルブリッジ（後述の２
つの圧力ｆＺ号出力端子３．４を備えている）型の半導
体圧力センサの中に２つの温度補償用の拡散抵抗が配置
されている場合を示し、（ｂ）図は１つの温度補償用拡
散抵抗が配置されている場合を示している。第３図にお
いて、１゜２は電源端子、３．４は圧力信号出力端子、
５゜６は温度補償信号出力端子、１０は半導体圧力セン
サをパッケージして収容するセンサパッケージ、Ｒ１−
Ｒ４はブリッジ抵抗、Ｒ５，Ｒ６は温度補償用拡散抵抗
である。また、各抵抗Ｒ１〜Ｒ６が何れもパッケージ化
されているために、これと接続される各端子１〜６は何
れも気密性の端子となっている。In other words, Fig. 3(a) shows a full bridge (see 2 below).
Figure (b) shows a case where two temperature compensation diffusion resistors are arranged in a semiconductor pressure sensor of the type (3.4) equipped with two pressure fZ output terminals 3.4; This shows the case where a resistor is placed. In Fig. 3, 1°2 is a power supply terminal, 3.4 is a pressure signal output terminal,
5゜6 is a temperature compensation signal output terminal, 10 is a sensor package that packages and accommodates a semiconductor pressure sensor, R1-
R4 is a bridge resistor, and R5 and R6 are temperature compensation diffused resistors. Moreover, since each of the resistors R1 to R6 is packaged, each of the terminals 1 to 6 connected thereto is an airtight terminal.
このように、従来は、半導体圧力センサ周辺の温度が変
化した場合は、センサパッケージ１０内に封入された温
度補償用拡散抵抗５，６の抵抗値の変化によりその温度
補償を行っている。As described above, conventionally, when the temperature around the semiconductor pressure sensor changes, the temperature is compensated for by changing the resistance value of the temperature compensation diffused resistors 5 and 6 sealed in the sensor package 10.
［発明が解決しようとする課題］
上述した従来の半導体圧力センサは、このセンサパッケ
ージ１０内に温度補正のための拡散抵抗を配置している
。このセンサダイヤグラム自身は非常に小さいので新た
に温度補償用抵抗を付加することは、スペースおよびコ
スト的にみても問題を生じないが、このセンサダイヤグ
ラムを１つのセンサとしてパッケージ化する場合、新た
に温度補償用抵抗からの信号線にバーメツチクシールを
施す必要があり、このシールを付加すると、コスト高と
なるとともにセンナの形状が大きくなるという問題があ
った。[Problems to be Solved by the Invention] The conventional semiconductor pressure sensor described above has a diffused resistor disposed within the sensor package 10 for temperature correction. Since this sensor diagram itself is very small, adding a new temperature compensation resistor will not cause any problems in terms of space and cost. However, if this sensor diagram is packaged as a single sensor, It is necessary to apply a barmetic seal to the signal line from the compensation resistor, and adding this seal raises the problem of increasing cost and increasing the size of the sensor.
［課題を解決するための手段］
このような課題を解決するために本発明に係る圧力セン
サの温度特性の補正方法の第１発明は、２つの電源端子
と１つまたは２つの出力端子とを備えたブリッジ型の圧
力センサにおいて、圧力センサの電源端子へ一定電圧を
印加して駆動したときの圧力センサヘの供給電流を検出
し、検出された電流値から圧力センサの温度変化を求め
るとともに、圧力センサの出力値を補正するようにした
方法である。[Means for Solving the Problems] In order to solve such problems, the first invention of the method for correcting the temperature characteristics of a pressure sensor according to the present invention has two power terminals and one or two output terminals. In the bridge-type pressure sensor equipped with the sensor, the current supplied to the pressure sensor is detected when the pressure sensor is driven by applying a constant voltage to the power supply terminal, and the temperature change of the pressure sensor is determined from the detected current value. This method corrects the output value of the sensor.
また、第２発明は、圧力センサの電源端子へ一定電流を
供給して駆動したときの圧力センサヘの供給電圧を検出
し、検出された電圧値から圧力センサの温度変化を求め
るとともに、圧力センサの出力値を補正するようにした
方法である。Further, the second invention detects the voltage supplied to the pressure sensor when the pressure sensor is driven by supplying a constant current to the power supply terminal of the pressure sensor, calculates the temperature change of the pressure sensor from the detected voltage value, and This method corrects the output value.
［作用］
圧力センサの電源端子へ一定電圧または一定電流が供給
されてこの圧力センサが駆動されたときに、検出された
圧力センサの供給電流または供給電圧から圧力センサの
出力値が補正される。[Function] When a constant voltage or constant current is supplied to the power supply terminal of the pressure sensor and the pressure sensor is driven, the output value of the pressure sensor is corrected from the detected supply current or voltage of the pressure sensor.
［実施例］ 次に、本発明について図面を参照して説明する。[Example] Next, the present invention will be explained with reference to the drawings.
第１図は、本発明に係る圧力センサの温度特性の補正方
法を適用した装置の一実施例を示すブロック図である。FIG. 1 is a block diagram showing an embodiment of a device to which a method of correcting temperature characteristics of a pressure sensor according to the present invention is applied.
同図において、第３図の従来の構成図と同等部分は同一
符号を付してその説明を省略する。第１図において、２
０は抵抗Ｒ１〜Ｒ４からなる半導体圧力センサをパッケ
ージして収容するセンサパッケージ、２１〜２３は差動
増幅器、２４は定電圧源、２５は補正回路、Ｑはトラン
ジスタ、Ｄはダイオード、ａは圧力信号、ｂは周囲温度
の変化に応じた電流値を示す電流値信号、Ｃは補正圧力
信号である。In this figure, the same parts as those in the conventional configuration diagram of FIG. 3 are given the same reference numerals, and the explanation thereof will be omitted. In Figure 1, 2
0 is a sensor package that packages and houses a semiconductor pressure sensor consisting of resistors R1 to R4, 21 to 23 are differential amplifiers, 24 is a constant voltage source, 25 is a correction circuit, Q is a transistor, D is a diode, and a is a pressure The signal b is a current value signal indicating a current value according to a change in ambient temperature, and C is a corrected pressure signal.
次に、この装置の動作を説明する。定電圧源２４から抵
抗Ｒ１〜Ｒ４から構成される半導体圧力センサを収容す
るセンサパッケージ２０の電源端子１，２へ一定の電圧
が供給されると、この定電圧電源２４からトランジスタ
Ｑ、抵抗ＲＩＯを介して半導体圧力センサヘ電流が流れ
て半導体圧力センサが駆動され、この結果、例えばガス
等の圧力がこの半導体圧力センサにおいて検出される場
合は、その出力端子３．４問に電位差が生じ、これが差
動増幅器２３の入力端子へ送出され、差動増幅器２３か
ら圧力信号ａとして補正回路２５へ送出される。Next, the operation of this device will be explained. When a constant voltage is supplied from the constant voltage source 24 to the power terminals 1 and 2 of the sensor package 20 that accommodates the semiconductor pressure sensor composed of resistors R1 to R4, the constant voltage source 24 supplies the transistor Q and the resistor RIO. A current flows through the semiconductor pressure sensor to drive the semiconductor pressure sensor, and as a result, when the pressure of, for example, gas is detected in this semiconductor pressure sensor, a potential difference occurs between the output terminals 3 and 4, and this The signal is sent to the input terminal of the dynamic amplifier 23, and is sent from the differential amplifier 23 to the correction circuit 25 as a pressure signal a.
一方、この半導体圧力センサ内の各抵抗Ｒ１〜Ｒ４は、
周囲温度に応じて可変し、また、この半導体圧力センサ
に印加される電圧は一定であるので、半導体圧力センサ
に流れる電流の値は周囲温度に応じて変化する。従って
、抵抗ＲＩＯに流れる電流値の変化に応じて抵抗ＲＩＯ
の両端の電位差も変化し、この電位差が差動増幅器２１
において検出されて電流値信号すとして補正回路２５へ
送出される。On the other hand, each resistance R1 to R4 in this semiconductor pressure sensor is
Since the voltage applied to the semiconductor pressure sensor is variable depending on the ambient temperature and is constant, the value of the current flowing through the semiconductor pressure sensor changes depending on the ambient temperature. Therefore, depending on the change in the current value flowing through the resistor RIO, the resistor RIO
The potential difference between both ends of the differential amplifier 21 also changes.
is detected and sent to the correction circuit 25 as a current value signal.
こうして、補正回路２５においては、差動増幅器２３か
ら入力した圧力信号ａに対し周囲温度に応じて変化する
電流値信号すに基づき補正を加え、この補正された圧力
信号を、補正圧力信号Ｃとして出力する。In this way, the correction circuit 25 corrects the pressure signal a input from the differential amplifier 23 based on the current value signal S which changes depending on the ambient temperature, and uses this corrected pressure signal as the correction pressure signal C. Output.
次に、第２図は、本発明に係る圧力センサの温度特性の
補正方法を適用した装置の第２の実施例を示すブロック
図である。Next, FIG. 2 is a block diagram showing a second embodiment of an apparatus to which the method of correcting temperature characteristics of a pressure sensor according to the present invention is applied.
同図において、２６は定電流源、２７は補正回路、ｄは
電圧値信号である。そして、定電流源２６からセンサパ
ッケージ２０の電源端子１，２へ一定の電流が供給され
ると、上記したように、半導体圧力センサが駆動され、
この半導体圧力センサによりガス等が検出される場合は
、その出力端子３．４間に電位差が生じ、これが差動増
幅器２３の２つの入力端子へ送出され、さらに差動増幅
器２３から圧力信号ａとして補正回路２７へ送出される
。In the figure, 26 is a constant current source, 27 is a correction circuit, and d is a voltage value signal. When a constant current is supplied from the constant current source 26 to the power terminals 1 and 2 of the sensor package 20, the semiconductor pressure sensor is driven as described above.
When a gas or the like is detected by this semiconductor pressure sensor, a potential difference occurs between its output terminals 3 and 4, which is sent to the two input terminals of the differential amplifier 23, and is further output from the differential amplifier 23 as a pressure signal a. The signal is sent to the correction circuit 27.
一方、このセンサパッケージ２０内の各抵抗Ｒ１〜Ｒ４
は、上記したように、周囲温度に応じて可変し、また、
この半導体圧力センサに供給される電流は一定であるの
で、半導体圧力センサに印加される電圧の値は周囲温度
に応じて変化し、この電圧値信号ｄが直接補正回路２７
へ送出される。On the other hand, each resistor R1 to R4 in this sensor package 20
As mentioned above, varies depending on the ambient temperature, and
Since the current supplied to this semiconductor pressure sensor is constant, the value of the voltage applied to the semiconductor pressure sensor changes depending on the ambient temperature, and this voltage value signal d is directly transmitted to the correction circuit 27.
sent to.
補正回路２７では、差動増幅器２３から入力した圧力信
号ａに対し周囲温度に応じて変化する電圧値信号ｄに基
づいた補正を行い、この補正された圧力信号を、補正圧
力信号Ｃとして出力する。The correction circuit 27 corrects the pressure signal a input from the differential amplifier 23 based on the voltage value signal d that changes depending on the ambient temperature, and outputs this corrected pressure signal as a corrected pressure signal C. .
このように、圧力信号の補正を行う信号を半導体圧カセ
ンサヘ供給される電流信号または電圧信号から得るよう
に構成したことにより、半導体圧力センサが温度センサ
を兼用することになり、この結果、半導体圧力センサの
温度変化に追従して速やかにその補正が行える。また、
温度補償用の拡散抵抗を備えていないので半導体圧力セ
ンサの出力端子数を少なく抑えることができ、パッケー
ジの小型化が可能になるとともに、コストダウンを図る
ことができる。In this way, by configuring the signal for correcting the pressure signal to be obtained from the current signal or voltage signal supplied to the semiconductor pressure sensor, the semiconductor pressure sensor doubles as a temperature sensor. It is possible to quickly correct changes in temperature of the sensor by following them. Also,
Since it does not include a diffused resistor for temperature compensation, the number of output terminals of the semiconductor pressure sensor can be kept small, making it possible to downsize the package and reduce costs.
なお、本実施例においては、２つの出力端子３．４を有
するフルブリッジ型の半導体圧力センサに適用した例を
説明したが、１つの出力端子を有するハーフブリッジ型
の半導体圧力センサに適用することもできる。Note that in this embodiment, an example has been described in which the present invention is applied to a full-bridge type semiconductor pressure sensor having two output terminals 3.4, but the present invention can also be applied to a half-bridge type semiconductor pressure sensor having one output terminal. You can also do it.
また、補正回路２５．２７は何れもアナログ回路によっ
て構成しても良いし、マイクロコンピュータ内蔵型の発
信器に収容される半導体圧力センサであれば、このセン
サの温度補正は各信号をＡ／Ｄ変換後ソフトウェアによ
り実現できる。また、補正の際にはセンサの特性も影響
を与えるので、これらのデータを記憶しておいてマイク
ロコンピュータにより総合的なディジタルの補正処理を
行うようにしても良い。Further, the correction circuits 25 and 27 may both be configured by analog circuits, or if the sensor is a semiconductor pressure sensor housed in a transmitter with a built-in microcomputer, the temperature correction of this sensor is performed by converting each signal into an A/D converter. This can be achieved using post-conversion software. Further, since the characteristics of the sensor also have an influence upon correction, these data may be stored and a comprehensive digital correction process may be performed by a microcomputer.
［発明の効果］
以上説明したように本発明に係る圧力センサの温度特性
の補正方法は、圧力センサの電源端子へ一定電圧または
一定を流を供給しこの圧力センサを駆動したときに、検
出された圧力センサの供給電流または供給電圧から圧力
センサの温度変化を求めるとともに、圧力センサの出力
値を補正するようにしたので、新たに温度補償用抵抗を
付加してこれの信号線にバーメツチクシールを施す必要
がなく、従ってセンサの形状の小型化およびセンサのコ
ストダウンが可能になるという効果がある。[Effects of the Invention] As explained above, the method for correcting the temperature characteristics of a pressure sensor according to the present invention provides a method for correcting the temperature characteristics of a pressure sensor when the pressure sensor is driven by supplying a constant voltage or a constant flow to the power supply terminal of the pressure sensor. In addition to calculating the temperature change of the pressure sensor from the supply current or supply voltage of the pressure sensor, we also corrected the output value of the pressure sensor, so we added a new temperature compensation resistor and connected the signal line to a barmetic wire. There is no need to apply a seal, so there is an effect that the size of the sensor can be reduced and the cost of the sensor can be reduced.
第１図は本発明に係る圧力センサの温度特性の補正方法
を適用した装置の一実施例を示すブロック図、第２図は
この装置の他の実施例を示すブロック図、第３図の（ａ
）図および（ｂ）図は従来の圧力センサの構成図である
。
１．２・・・・電源端子、３．１−−・出力端子、２０
・・・・センサパッケージ、２１〜２３・・・・差動増
幅器、２４・・・・定電圧源、２５．２７・・・・補正
回路、２６・・・一定電流源、Ｒ１−Ｒ４，Ｒｌｏ・・
−一抵抗、（１・・・トランジスタ、Ｄ・−・・ダイオ
ード、ａ・・・・圧力信号、ｂ・・・・電流値信号、Ｃ
・・・・補正圧力信号、ｄ・・・・電圧値信号。
第１図
第２図
第３ｒ！Ａ
（ａ）
１υ
（ｂ）FIG. 1 is a block diagram showing one embodiment of a device to which the method of correcting temperature characteristics of a pressure sensor according to the present invention is applied, FIG. 2 is a block diagram showing another embodiment of this device, and FIG. a
) and (b) are configuration diagrams of conventional pressure sensors. 1.2...Power terminal, 3.1--Output terminal, 20
...Sensor package, 21-23...Differential amplifier, 24...Constant voltage source, 25.27...Correction circuit, 26...Constant current source, R1-R4, Rlo・・・
- one resistor, (1... transistor, D... diode, a... pressure signal, b... current value signal, C
...Corrected pressure signal, d...Voltage value signal. Figure 1 Figure 2 Figure 3r! A (a) 1υ (b)
Claims (2)
備えたブリッジ型の圧力センサにおいて、前記圧力セン
サの電源端子へ一定電圧を印加して駆動したときのこの
圧力センサヘの供給電流を検出し、この検出された電流
値に基づいて前記圧力センサの温度変化を求めるととも
に、前記圧力センサの出力値を補正するようにしたこと
を特徴とする圧力センサの温度特性の補正方法。(1) In a bridge-type pressure sensor equipped with two power supply terminals and one or two output terminals, the current supplied to the pressure sensor when a constant voltage is applied to the power supply terminal of the pressure sensor to drive the pressure sensor. A method for correcting temperature characteristics of a pressure sensor, comprising detecting a current value, determining a temperature change in the pressure sensor based on the detected current value, and correcting an output value of the pressure sensor.
備えたブリッジ型の圧力センサにおいて、前記圧力セン
サの電源端子へ一定電流を供給して駆動したときの前記
圧力センサヘの供給電圧を検出し、この検出された電圧
値に基づいて前記圧力センサの温度変化を求めるととも
に、前記圧力センサの出力値を補正するようにしたこと
を特徴とする圧力センサの温度特性の補正方法。(2) In a bridge-type pressure sensor equipped with two power supply terminals and one or two output terminals, the supply voltage to the pressure sensor when driven by supplying a constant current to the power supply terminal of the pressure sensor. A method for correcting temperature characteristics of a pressure sensor, characterized in that the temperature change of the pressure sensor is determined based on the detected voltage value, and the output value of the pressure sensor is corrected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277763A JPH04155233A (en) | 1990-10-18 | 1990-10-18 | Correction of temperature characteristic for pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277763A JPH04155233A (en) | 1990-10-18 | 1990-10-18 | Correction of temperature characteristic for pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04155233A true JPH04155233A (en) | 1992-05-28 |
Family
ID=17587997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2277763A Pending JPH04155233A (en) | 1990-10-18 | 1990-10-18 | Correction of temperature characteristic for pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04155233A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7930944B2 (en) | 2008-05-14 | 2011-04-26 | Honeywell International Inc. | ASIC compensated pressure sensor with soldered sense die attach |
| US8371176B2 (en) | 2011-01-06 | 2013-02-12 | Honeywell International Inc. | Media isolated pressure sensor |
| US8516897B1 (en) | 2012-02-21 | 2013-08-27 | Honeywell International Inc. | Pressure sensor |
| JP2018132433A (en) * | 2017-02-16 | 2018-08-23 | セイコーインスツル株式会社 | Pressure change measuring apparatus, altitude measuring apparatus, and pressure change measuring method |
| JP2019060810A (en) * | 2017-09-28 | 2019-04-18 | セイコーインスツル株式会社 | Pressure sensor |
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| JPS5744830A (en) * | 1980-09-01 | 1982-03-13 | Hitachi Ltd | Pressure detecting device |
| JPS62168030A (en) * | 1986-01-21 | 1987-07-24 | Yamatake Honeywell Co Ltd | Temperature compensating circuit for semiconductor pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5744830A (en) * | 1980-09-01 | 1982-03-13 | Hitachi Ltd | Pressure detecting device |
| JPS62168030A (en) * | 1986-01-21 | 1987-07-24 | Yamatake Honeywell Co Ltd | Temperature compensating circuit for semiconductor pressure sensor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7930944B2 (en) | 2008-05-14 | 2011-04-26 | Honeywell International Inc. | ASIC compensated pressure sensor with soldered sense die attach |
| US8371176B2 (en) | 2011-01-06 | 2013-02-12 | Honeywell International Inc. | Media isolated pressure sensor |
| US8516897B1 (en) | 2012-02-21 | 2013-08-27 | Honeywell International Inc. | Pressure sensor |
| JP2018132433A (en) * | 2017-02-16 | 2018-08-23 | セイコーインスツル株式会社 | Pressure change measuring apparatus, altitude measuring apparatus, and pressure change measuring method |
| JP2019060810A (en) * | 2017-09-28 | 2019-04-18 | セイコーインスツル株式会社 | Pressure sensor |
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