KR840004846A - 고체촬상소자 및 그 구동방법 - Google Patents

고체촬상소자 및 그 구동방법

Info

Publication number
KR840004846A
KR840004846A KR1019830001407A KR830001407A KR840004846A KR 840004846 A KR840004846 A KR 840004846A KR 1019830001407 A KR1019830001407 A KR 1019830001407A KR 830001407 A KR830001407 A KR 830001407A KR 840004846 A KR840004846 A KR 840004846A
Authority
KR
South Korea
Prior art keywords
imaging device
solid state
state imaging
driving method
driving
Prior art date
Application number
KR1019830001407A
Other languages
English (en)
Other versions
KR890005237B1 (ko
Inventor
노리오 고이께
이와오 다께모또
신야 오오바
도시아끼 마스하라
마사하루 구보
Original Assignee
가부시기가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57056607A external-priority patent/JPS58175372A/ja
Priority claimed from JP57141115A external-priority patent/JPS5932264A/ja
Application filed by 가부시기가이샤 히다찌세이사구쇼 filed Critical 가부시기가이샤 히다찌세이사구쇼
Publication of KR840004846A publication Critical patent/KR840004846A/ko
Application granted granted Critical
Publication of KR890005237B1 publication Critical patent/KR890005237B1/ko

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • H01L27/14856Time-delay and integration
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713Transfer or readout registers; Split readout registers or multiple readout registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1019830001407A 1982-04-07 1983-04-06 고체촬상소자 및 그 구동방법 KR890005237B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP57-56607 1982-04-07
JP57056607A JPS58175372A (ja) 1982-04-07 1982-04-07 固体撮像素子
JP57-141115 1982-08-16
JP57141115A JPS5932264A (ja) 1982-08-16 1982-08-16 固体撮像素子の駆動方法

Publications (2)

Publication Number Publication Date
KR840004846A true KR840004846A (ko) 1984-10-24
KR890005237B1 KR890005237B1 (ko) 1989-12-18

Family

ID=26397559

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830001407A KR890005237B1 (ko) 1982-04-07 1983-04-06 고체촬상소자 및 그 구동방법

Country Status (4)

Country Link
US (1) US4514766A (ko)
EP (1) EP0091120A3 (ko)
KR (1) KR890005237B1 (ko)
CA (1) CA1199400A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487501B1 (ko) * 1997-09-25 2005-08-04 삼성전자주식회사 고체촬상장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689687A (en) * 1984-11-13 1987-08-25 Hitachi, Ltd. Charge transfer type solid-state imaging device
JPH0642723B2 (ja) * 1984-11-13 1994-06-01 株式会社東芝 固体撮像素子の駆動方法
DD236625A1 (de) * 1985-01-22 1986-06-11 Werk Fernsehelektronik Veb Ccd-matrix mit spaltentransfer und punktweisem anti-blooming
US4584609A (en) * 1985-04-15 1986-04-22 Rca Corporation Parallel-input/serial output CCD register with clocking noise cancellation, as for use in solid-state imagers
JPS6238677A (ja) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp 固体撮像素子
US4750041A (en) * 1986-08-21 1988-06-07 Eastman Kodak Company Apparatus for merged field operation of an image sensor in a still video camera
US4752829A (en) * 1986-12-29 1988-06-21 Fairchild Weston Systems, Inc. Multipacket charge transfer image sensor and method
US4847692A (en) * 1987-01-26 1989-07-11 Fuji Photo Film Co., Ltd. Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure
KR930002818B1 (ko) * 1990-05-11 1993-04-10 금성일렉트론주식회사 Ccd 영상소자
US5237422A (en) * 1991-08-14 1993-08-17 Eastman Kodak Company High speed clock driving circuitry for interline transfer ccd imagers
JP2788388B2 (ja) * 1993-03-30 1998-08-20 株式会社東芝 固体撮像装置
US5796433A (en) * 1996-03-20 1998-08-18 Loral Fairchild Corp. Multiple-frame CCD image sensor with overlying photosensitive layer
JPH1098648A (ja) * 1996-09-25 1998-04-14 Nec Corp 固体撮像装置
US6690421B1 (en) * 1996-10-30 2004-02-10 Fuji Photo Film Co., Ltd. Structure of solid state image pickup device
JP4139641B2 (ja) * 2002-07-19 2008-08-27 富士フイルム株式会社 固体撮像素子
US20040100571A1 (en) * 2002-11-21 2004-05-27 Spears Kurt E. System and method for communicating information in an image capture device
US20050068441A1 (en) * 2003-09-26 2005-03-31 Eastman Kodak Company Multiple output CCD for color imaging

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
JPS55163951A (en) * 1979-06-08 1980-12-20 Toshiba Corp Solid-state pickup unit
JPS6041510B2 (ja) * 1980-03-11 1985-09-17 日本電気株式会社 固体撮像板
JPS56152382A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Solid image pickup element
JPS5856458U (ja) * 1981-10-09 1983-04-16 株式会社日立製作所 カラ−固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487501B1 (ko) * 1997-09-25 2005-08-04 삼성전자주식회사 고체촬상장치

Also Published As

Publication number Publication date
KR890005237B1 (ko) 1989-12-18
CA1199400A (en) 1986-01-14
EP0091120A3 (en) 1986-02-05
US4514766A (en) 1985-04-30
EP0091120A2 (en) 1983-10-12

Similar Documents

Publication Publication Date Title
DE3486434D1 (de) Bildbearbeitungsgerät
DE3752018D1 (de) Festkörperbildaufnahme-Gerät
DE3650722D1 (de) Bilderzeugungsgerät
DK361583D0 (da) Trykkemetode og -apparat
NO832619L (no) Koblingsenhet
KR850007120A (ko) Nmr 영상화 장치 및 방법
KR840004846A (ko) 고체촬상소자 및 그 구동방법
KR850004657A (ko) 고체 촬상장치
SE8202259L (sv) Snabbkopplingsanordning
NO831889L (no) Forbrennings-varmeanordning
BR8303890A (pt) Dispositivo anti-refulgor
DK471383A (da) Ultralyd-maaleanordning
KR850008078A (ko) 고체촬상장치 및 그 구동방법
IT1169440B (it) Dispositivo bloccastoppino su stiratoi-filatoi
BR8300664A (pt) Dispositivo vibratorio
IT1218346B (it) Dispositivo di connessione
DE3752341D1 (de) Festkörperabbildungsgerät
DK536183A (da) Sigteanordning
IT1160548B (it) Dispositivo per la filatura-ritorcitura
DE3751197D1 (de) Bildaufzeichnungsverfahren und -gerät.
BR8303626A (pt) Mandril de brunir e dispostivo de brunir
JPS55115085A (en) Method and device for driving electrochrmic element
FI831357L (fi) Draganordning
DE3374084D1 (de) Radiogoniometric device
DE3364190D1 (de) Insertion device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19931214

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee