KR20250154424A - 박막의 제조 방법 및 박막 형성용 원료 - Google Patents

박막의 제조 방법 및 박막 형성용 원료

Info

Publication number
KR20250154424A
KR20250154424A KR1020257030928A KR20257030928A KR20250154424A KR 20250154424 A KR20250154424 A KR 20250154424A KR 1020257030928 A KR1020257030928 A KR 1020257030928A KR 20257030928 A KR20257030928 A KR 20257030928A KR 20250154424 A KR20250154424 A KR 20250154424A
Authority
KR
South Korea
Prior art keywords
thin film
general formula
raw material
antimony
bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257030928A
Other languages
English (en)
Korean (ko)
Inventor
요시키 오오에
지아키 미츠이
마사키 엔즈
아키히로 니시다
Original Assignee
가부시키가이샤 아데카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 아데카 filed Critical 가부시키가이샤 아데카
Publication of KR20250154424A publication Critical patent/KR20250154424A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plural Heterocyclic Compounds (AREA)
KR1020257030928A 2023-02-24 2024-02-20 박막의 제조 방법 및 박막 형성용 원료 Pending KR20250154424A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-027200 2023-02-24
JP2023027200 2023-02-24
PCT/JP2024/005979 WO2024177053A1 (ja) 2023-02-24 2024-02-20 薄膜の製造方法及び薄膜形成用原料

Publications (1)

Publication Number Publication Date
KR20250154424A true KR20250154424A (ko) 2025-10-28

Family

ID=92501383

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257030928A Pending KR20250154424A (ko) 2023-02-24 2024-02-20 박막의 제조 방법 및 박막 형성용 원료

Country Status (6)

Country Link
EP (1) EP4671410A1 (https=)
JP (1) JPWO2024177053A1 (https=)
KR (1) KR20250154424A (https=)
IL (1) IL322598A (https=)
TW (1) TW202440604A (https=)
WO (1) WO2024177053A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013508555A (ja) 2009-10-26 2013-03-07 アーエスエム インターナショナル エヌフェー Ｖａ族元素を含む薄膜のａｌｄのための前駆体の合成及び使用
JP2013084959A (ja) 2011-10-12 2013-05-09 Asm Internatl Nv 酸化アンチモン膜の原子層堆積
JP2015007279A (ja) 2013-04-11 2015-01-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 多成分膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013508555A (ja) 2009-10-26 2013-03-07 アーエスエム インターナショナル エヌフェー Ｖａ族元素を含む薄膜のａｌｄのための前駆体の合成及び使用
JP2013084959A (ja) 2011-10-12 2013-05-09 Asm Internatl Nv 酸化アンチモン膜の原子層堆積
JP2015007279A (ja) 2013-04-11 2015-01-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 多成分膜の製造方法

Also Published As

Publication number Publication date
TW202440604A (zh) 2024-10-16
EP4671410A1 (en) 2025-12-31
IL322598A (en) 2025-10-01
JPWO2024177053A1 (https=) 2024-08-29
WO2024177053A1 (ja) 2024-08-29

Similar Documents

Publication Publication Date Title
JP5843318B2 (ja) Ａｌｄ法用窒化アルミニウム系薄膜形成用原料及び該薄膜の製造方法
JP7368372B2 (ja) 薄膜の製造方法
WO2019203035A1 (ja) 原子層堆積法用薄膜形成用原料及び薄膜の製造方法
WO2019044448A1 (ja) 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
KR102791292B1 (ko) 원자층 퇴적법용 박막 형성 원료, 박막의 제조 방법 및 알콕시드 화합물
JP7717051B2 (ja) 原子層堆積法用薄膜形成用原料及び薄膜の製造方法
WO2022190877A1 (ja) 原子層堆積法用薄膜形成用原料、薄膜、薄膜の製造方法及び亜鉛化合物
WO2018235530A1 (ja) 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
WO2020170853A1 (ja) 原子層堆積法用窒化ガリウム含有薄膜形成用原料及び窒化ガリウム含有薄膜の製造方法
KR20220161372A (ko) 아연 화합물, 박막 형성용 원료, 박막 및 그 제조 방법
JP2024022694A (ja) 原子層堆積法用薄膜形成原料、薄膜の製造方法及びアルミニウム化合物
JP2014005242A (ja) アルミニウム化合物、薄膜形成用原料及び薄膜の製造方法
KR20250154424A (ko) 박막의 제조 방법 및 박막 형성용 원료
JP7796014B2 (ja) 薄膜形成用原料、薄膜及び薄膜の製造方法
JP7730762B2 (ja) 化合物、薄膜形成用原料及び薄膜の製造方法
WO2023171489A1 (ja) 原子層堆積法用薄膜形成用原料、薄膜及び薄膜の製造方法
TWI842950B (zh) 用於原子層沉積法之薄膜形成原料及使用其之含鋅薄膜的製造方法
JP7573514B2 (ja) 薄膜形成用原料、薄膜の製造方法及び新規なスカンジウム化合物
WO2018008351A1 (ja) 金属炭化物含有薄膜形成用原料及び金属炭化物含有薄膜の製造方法
KR20260053539A (ko) 박막의 제조 방법 및 박막 형성용 원료
WO2025047584A1 (ja) 薄膜の製造方法及び薄膜形成用原料
JP7758681B2 (ja) 原子層堆積法用薄膜形成原料及び薄膜の製造方法
WO2025197782A1 (ja) 薄膜の製造方法及び原子層堆積法用薄膜形成用原料
JP7641235B2 (ja) 銅含有層の製造方法
EP3647460B1 (en) Thin film production method and novel compound

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)