IL322598A - Method for producing a thin layer and raw material for forming a thin layer - Google Patents

Method for producing a thin layer and raw material for forming a thin layer

Info

Publication number
IL322598A
IL322598A IL322598A IL32259825A IL322598A IL 322598 A IL322598 A IL 322598A IL 322598 A IL322598 A IL 322598A IL 32259825 A IL32259825 A IL 32259825A IL 322598 A IL322598 A IL 322598A
Authority
IL
Israel
Prior art keywords
film
thin
raw material
general formula
antimony
Prior art date
Application number
IL322598A
Other languages
English (en)
Hebrew (he)
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of IL322598A publication Critical patent/IL322598A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plural Heterocyclic Compounds (AREA)
IL322598A 2023-02-24 2024-02-20 Method for producing a thin layer and raw material for forming a thin layer IL322598A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023027200 2023-02-24
PCT/JP2024/005979 WO2024177053A1 (ja) 2023-02-24 2024-02-20 薄膜の製造方法及び薄膜形成用原料

Publications (1)

Publication Number Publication Date
IL322598A true IL322598A (en) 2025-10-01

Family

ID=92501383

Family Applications (1)

Application Number Title Priority Date Filing Date
IL322598A IL322598A (en) 2023-02-24 2024-02-20 Method for producing a thin layer and raw material for forming a thin layer

Country Status (6)

Country Link
EP (1) EP4671410A1 (https=)
JP (1) JPWO2024177053A1 (https=)
KR (1) KR20250154424A (https=)
IL (1) IL322598A (https=)
TW (1) TW202440604A (https=)
WO (1) WO2024177053A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102687243B (zh) 2009-10-26 2016-05-11 Asm国际公司 用于含va族元素的薄膜ald的前体的合成和使用
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film

Also Published As

Publication number Publication date
TW202440604A (zh) 2024-10-16
EP4671410A1 (en) 2025-12-31
KR20250154424A (ko) 2025-10-28
JPWO2024177053A1 (https=) 2024-08-29
WO2024177053A1 (ja) 2024-08-29

Similar Documents

Publication Publication Date Title
IL264379A (en) Preparations and methods of use for layers containing carbon-impregnated silicone
IL272276B2 (en) Metal alkoxide compound, thin film forming raw material, and thin film production method
IL315877A (en) Metal complexes containing cyclopentadienyl ligands
IL274451B1 (en) Ruthenium compound, raw material for creating a thin layer and method for creating a thin layer
IL298113A (en) Inherently ferroelectric hf-zr containing films
JP2010275602A (ja) 化学気相成長用原料とこれを用いたシリコン含有薄膜形成方法
IL296896A (en) A raw material that forms a thin layer used in the atomic layer deposition method and a method for producing a thin layer
JPWO2019203035A1 (ja) 原子層堆積法用薄膜形成用原料及び薄膜の製造方法
IL322598A (en) Method for producing a thin layer and raw material for forming a thin layer
WO2022190877A1 (ja) 原子層堆積法用薄膜形成用原料、薄膜、薄膜の製造方法及び亜鉛化合物
WO2013109401A1 (en) Silicon containing compounds for ald deposition of metal silicate films
IL299716A (en) Alkoxide compound, raw material forming a thin layer and method for producing a thin layer
TW202132319A (zh) 新穎化合物、含有該化合物的薄膜形成用原料及薄膜的製造方法
IL293196B2 (en) Compound, thin-film forming raw material, and method of producing thin-film
IL297232A (en) Amidinate compound, dimer compound thereof, thin-film forming raw material, and method of producing thin film
IL312571A (en) A thin layer forming material for use in atomic layer deposition, a thin layer, a method for producing a thin layer and a ruthenium compound
IL322134A (en) Compound, raw material for forming a thin layer, thin layer and method for producing a thin layer
IL302870A (en) A method for producing a thin layer
IL293726A (en) A method for producing a layer containing copper
WO2025197782A1 (ja) 薄膜の製造方法及び原子層堆積法用薄膜形成用原料
TW202517661A (zh) 薄膜之製造方法以及薄膜形成用原料
JP2025081785A (ja) 原子層堆積法用薄膜形成用原料、薄膜及び薄膜の製造方法
IL302868A (en) Method of producing thin-film
KR20260053539A (ko) 박막의 제조 방법 및 박막 형성용 원료
KR20220078608A (ko) 산화이트륨 함유막의 제조 방법