KR20250148703A - 에칭 조성물, 에칭 방법, 반도체 소자의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법 - Google Patents

에칭 조성물, 에칭 방법, 반도체 소자의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법

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Publication number
KR20250148703A
KR20250148703A KR1020257022727A KR20257022727A KR20250148703A KR 20250148703 A KR20250148703 A KR 20250148703A KR 1020257022727 A KR1020257022727 A KR 1020257022727A KR 20257022727 A KR20257022727 A KR 20257022727A KR 20250148703 A KR20250148703 A KR 20250148703A
Authority
KR
South Korea
Prior art keywords
silicon
etching
mass
composition
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257022727A
Other languages
English (en)
Korean (ko)
Inventor
히로유키 시라에
데츠오 가사이
하루 센도
Original Assignee
미쯔비시 케미컬 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쯔비시 케미컬 주식회사 filed Critical 미쯔비시 케미컬 주식회사
Publication of KR20250148703A publication Critical patent/KR20250148703A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • H10D30/0191—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels forming stacked channels, e.g. changing their shapes or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020257022727A 2023-02-10 2024-02-08 에칭 조성물, 에칭 방법, 반도체 소자의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법 Pending KR20250148703A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2023-019284 2023-02-10
JP2023019284 2023-02-10
JPJP-P-2023-084973 2023-05-23
JP2023084973 2023-05-23
PCT/JP2024/004306 WO2024166976A1 (ja) 2023-02-10 2024-02-08 エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法

Publications (1)

Publication Number Publication Date
KR20250148703A true KR20250148703A (ko) 2025-10-14

Family

ID=92263061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257022727A Pending KR20250148703A (ko) 2023-02-10 2024-02-08 에칭 조성물, 에칭 방법, 반도체 소자의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법

Country Status (5)

Country Link
US (1) US20250361441A1 (https=)
JP (1) JPWO2024166976A1 (https=)
KR (1) KR20250148703A (https=)
TW (1) TW202440877A (https=)
WO (1) WO2024166976A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172907A1 (ja) 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
JP2019054121A (ja) * 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液
JP7527313B2 (ja) * 2019-06-13 2024-08-02 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にｐ－ドープされたシリコン及びシリコン―ゲルマニウムに対してポリシリコンを選択的に除去するための液体組成物
WO2022190903A1 (ja) * 2021-03-11 2022-09-15 富士フイルム株式会社 半導体処理用組成物、被処理物の処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172907A1 (ja) 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法

Also Published As

Publication number Publication date
TW202440877A (zh) 2024-10-16
JPWO2024166976A1 (https=) 2024-08-15
US20250361441A1 (en) 2025-11-27
WO2024166976A1 (ja) 2024-08-15

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