KR20250121533A - 감방사선성 조성물 및 레지스트 패턴 형성 방법 - Google Patents

감방사선성 조성물 및 레지스트 패턴 형성 방법

Info

Publication number
KR20250121533A
KR20250121533A KR1020257015952A KR20257015952A KR20250121533A KR 20250121533 A KR20250121533 A KR 20250121533A KR 1020257015952 A KR1020257015952 A KR 1020257015952A KR 20257015952 A KR20257015952 A KR 20257015952A KR 20250121533 A KR20250121533 A KR 20250121533A
Authority
KR
South Korea
Prior art keywords
group
polymer
radiation
structural unit
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257015952A
Other languages
English (en)
Korean (ko)
Inventor
다쿠야 오미야
료 이토
아츠시 나카가와
유우시 마츠무라
가츠아키 니시코리
Original Assignee
제이에스알 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시키가이샤 filed Critical 제이에스알 가부시키가이샤
Publication of KR20250121533A publication Critical patent/KR20250121533A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020257015952A 2022-12-13 2023-10-19 감방사선성 조성물 및 레지스트 패턴 형성 방법 Pending KR20250121533A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022198953 2022-12-13
JPJP-P-2022-198953 2022-12-13
PCT/JP2023/037922 WO2024127808A1 (ja) 2022-12-13 2023-10-19 感放射線性組成物及びレジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20250121533A true KR20250121533A (ko) 2025-08-12

Family

ID=91485454

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257015952A Pending KR20250121533A (ko) 2022-12-13 2023-10-19 감방사선성 조성물 및 레지스트 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JPWO2024127808A1 (https=)
KR (1) KR20250121533A (https=)
TW (1) TW202424021A (https=)
WO (1) WO2024127808A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026054060A1 (ja) * 2024-09-09 2026-03-12 Jsr株式会社 感放射線性組成物、パターン形成方法及び重合体の製造方法
WO2026070651A1 (ja) * 2024-09-27 2026-04-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017104355A1 (ja) 2015-12-18 2017-06-22 富士フイルム株式会社 レジスト組成物、レジスト膜、マスクブランクス、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5740234B2 (ja) * 2010-07-30 2015-06-24 富士フイルム株式会社 平版印刷版原版及びそれに用いる新規なベタイン含有ポリマー
JP7363694B2 (ja) * 2020-07-17 2023-10-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR102894013B1 (ko) * 2020-09-28 2025-12-03 제이에스알 가부시키가이샤 감방사선성 수지 조성물 및 패턴 형성 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017104355A1 (ja) 2015-12-18 2017-06-22 富士フイルム株式会社 レジスト組成物、レジスト膜、マスクブランクス、パターン形成方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
JPWO2024127808A1 (https=) 2024-06-20
TW202424021A (zh) 2024-06-16
WO2024127808A1 (ja) 2024-06-20

Similar Documents

Publication Publication Date Title
KR20240170527A (ko) 감방사선성 조성물, 패턴 형성 방법 및 광 붕괴성 염기
KR102437123B1 (ko) 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법
KR102779495B1 (ko) 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물
KR20250040631A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법 및 감방사선성 산 발생제
JP6705303B2 (ja) 感放射線性樹脂組成物及びレジストパターン形成方法
KR20250121533A (ko) 감방사선성 조성물 및 레지스트 패턴 형성 방법
KR20260006578A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법 및 중합체
TW202334303A (zh) 感放射線性組成物及抗蝕劑圖案形成方法
JP2017156649A (ja) 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
KR20250166893A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법 및 감방사선성 산 발생체
KR20250028251A (ko) 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법
KR20250162784A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물
KR20260027866A (ko) 감방사선성 조성물, 패턴 형성 방법 및 오늄염 화합물
KR102945937B1 (ko) 감방사선성 조성물 및 레지스트 패턴 형성 방법
JP7826625B2 (ja) アルカリ現像用感放射線性組成物及びパターン形成方法
KR20250126709A (ko) 감방사선성 조성물 및 레지스트 패턴 형성 방법
KR20240170528A (ko) 감방사선성 조성물, 패턴 형성 방법 및 광 붕괴성 염기
KR20250116785A (ko) 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물
TW202134783A (zh) 感放射線性樹脂組成物及抗蝕劑圖案形成方法
JP6728787B2 (ja) 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
KR102845772B1 (ko) 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법
WO2025249330A1 (ja) 感放射線性組成物及びレジストパターン形成方法
KR20250124768A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물
WO2025239227A1 (ja) 感放射線性組成物及びレジストパターン形成方法
WO2025234401A1 (ja) 感放射線性組成物及びレジストパターン形成方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)