KR20250113446A - 적층체의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재의 제조 방법 - Google Patents

적층체의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재의 제조 방법

Info

Publication number
KR20250113446A
KR20250113446A KR1020257020257A KR20257020257A KR20250113446A KR 20250113446 A KR20250113446 A KR 20250113446A KR 1020257020257 A KR1020257020257 A KR 1020257020257A KR 20257020257 A KR20257020257 A KR 20257020257A KR 20250113446 A KR20250113446 A KR 20250113446A
Authority
KR
South Korea
Prior art keywords
group
pattern
laminate
insulating pattern
preferable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257020257A
Other languages
English (en)
Korean (ko)
Inventor
유타 야마카와
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20250113446A publication Critical patent/KR20250113446A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/76807—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H01L21/76828—
    • H01L21/7684—
    • H01L21/76843—
    • H01L21/76873—
    • H01L21/76877—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020257020257A 2022-12-28 2023-12-22 적층체의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재의 제조 방법 Pending KR20250113446A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-212410 2022-12-28
JP2022212410 2022-12-28
PCT/JP2023/046199 WO2024143209A1 (ja) 2022-12-28 2023-12-22 積層体の製造方法、感光性樹脂組成物、及び、半導体部材の製造方法

Publications (1)

Publication Number Publication Date
KR20250113446A true KR20250113446A (ko) 2025-07-25

Family

ID=91717849

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257020257A Pending KR20250113446A (ko) 2022-12-28 2023-12-22 적층체의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재의 제조 방법

Country Status (5)

Country Link
JP (1) JPWO2024143209A1 (https=)
KR (1) KR20250113446A (https=)
CN (1) CN120418936A (https=)
TW (1) TW202445682A (https=)
WO (1) WO2024143209A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202517714A (zh) * 2023-08-24 2025-05-01 日商富士軟片股份有限公司 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法及半導體元件
WO2025243704A1 (ja) * 2024-05-21 2025-11-27 Jsr株式会社 感放射線性組成物、パターン形成方法、及び化合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019090946A (ja) 2017-11-15 2019-06-13 日立化成株式会社 ネガ型感光性樹脂組成物及び半導体装置部材の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091289A (en) * 1990-04-30 1992-02-25 International Business Machines Corporation Process for forming multi-level coplanar conductor/insulator films employing photosensitive polyimide polymer compositions
JP3892217B2 (ja) * 1997-07-14 2007-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5023413B2 (ja) * 2001-05-11 2012-09-12 ソニー株式会社 半導体装置およびその製造方法
JP4266901B2 (ja) * 2003-09-30 2009-05-27 三洋電機株式会社 半導体装置およびその製造方法
JP5585133B2 (ja) * 2010-03-15 2014-09-10 富士電機株式会社 半導体素子及び半導体素子の製造方法
JP7643165B2 (ja) * 2021-05-07 2025-03-11 大日本印刷株式会社 ポリイミド樹脂、ポリイミド組成物、ポリイミド組成物の硬化膜及びその製造方法、絶縁膜、保護膜、並びに、電子部品

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019090946A (ja) 2017-11-15 2019-06-13 日立化成株式会社 ネガ型感光性樹脂組成物及び半導体装置部材の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Advances in Photosensitive Polymer Based Damascene RDL Processes: Toward Submicrometer Pitches With More Metal Layers, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), pp340-346

Also Published As

Publication number Publication date
TW202445682A (zh) 2024-11-16
JPWO2024143209A1 (https=) 2024-07-04
WO2024143209A1 (ja) 2024-07-04
CN120418936A (zh) 2025-08-01

Similar Documents

Publication Publication Date Title
WO2024095884A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
KR20230148224A (ko) 네거티브형 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20250113446A (ko) 적층체의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재의 제조 방법
EP4596608A1 (en) Resin composition, cured product, laminate, method for producing cured product, method for producing laminate, method for producing semiconductor device, and semiconductor device
KR20250056254A (ko) 막의 제조 방법, 감광성 수지 조성물, 경화물의 제조 방법, 경화물, 및 적층체
WO2024071380A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
KR20240156619A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
KR20240110029A (ko) 적층체, 디바이스, 수지 조성물, 경화물의 제조 방법, 적층체의 제조 방법, 및, 디바이스의 제조 방법
WO2022176869A1 (ja) 永久膜の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法
KR20250113451A (ko) 부재, 부재의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재
KR20250114053A (ko) 부재, 부재의 제조 방법, 감광성 수지 조성물, 및, 반도체 부재
KR102933491B1 (ko) 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
KR20250078499A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
KR20250040991A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2024101266A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
KR20250110271A (ko) 적층체의 제조 방법, 반도체 부재의 제조 방법, 감광성 수지 조성물, 적층체, 반도체 부재, 및, 수지 조성물
KR20250042161A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2024090460A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
KR20250039447A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2024101295A1 (ja) 硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
WO2026048730A1 (ja) 接合体、接合体の製造方法、感光性樹脂組成物、及び、半導体デバイス
WO2026048731A1 (ja) 接合体、接合体の製造方法、感光性樹脂組成物、及び、半導体デバイス
KR20250141216A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
WO2026048733A1 (ja) 接合体の製造方法、感光性樹脂組成物、及び、半導体部材の製造方法
WO2025070302A1 (ja) 樹脂組成物、及び再配線層用層間絶縁膜の製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000